Lyontek LY62W102516LL-55LLIT 1024k x 16 bit low power cmos sram Datasheet

®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
REVISION HISTORY
Revision
Rev. 0.1
Rev. 1.0
Description
Initial Issue
Revised Notes item 1 and 2 in page 3
Issue Date
Jul.13.2011
Aug.29.2013
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
Rev. 1.1
Revised ORDERING INFORMATION
Deleted WRITE CYCLE Notes :
Jun.29.2016
1.WE#,CE#, LB#, UB# must be high or CE2 must be low during
all address transitions.
In page 7
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 55/70ns
„ Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 10μA (TYP.) LL-version
„ Single 2.7V ~ 5.5V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
„ Data retention voltage : 1.5V (MIN.)
„ Green package available
„ Package : 48-pin 12mm x 20mm TSOP-I
The LY62W102516 is a 16,777,216-bit low power
CMOS static random access memory organized as
1,048,576 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62W102516 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62W102516 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
LY62W102516
LY62W102516(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
Speed
2.7 ~ 5.5V
2.7 ~ 5.5V
55/70ns
55/70ns
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
Vcc
Vss
A0-A19
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
CE2
WE#
OE#
LB#
UB#
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
10µA(LL)
45/30mA
10µA(LL)
45/30mA
SYMBOL
DESCRIPTION
A0 - A19
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
DECODER
I/O DATA
CIRCUIT
1024Kx16
MEMORY ARRAY
CE#, CE2
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
VCC
Power Supply
VSS
Ground
COLUMN I/O
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
PIN CONFIGURATION
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
SYMBOL
VT1
VT2
Operating Temperature
TA
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
IOUT
RATING
-0.5 to 6.5
-0.5 to VCC+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
CE2
OE#
WE#
LB#
UB#
H
X
X
L
L
L
L
L
L
L
L
X
L
X
H
H
H
H
H
H
H
H
X
X
X
H
H
L
L
L
X
X
X
X
X
X
H
H
H
H
H
L
L
L
X
X
H
L
X
L
H
L
L
H
L
X
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
SUPPLY CURRENT
DQ0-DQ7 DQ8-DQ15
High – Z
High – Z
ISB,ISB1
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
ICC,ICC1
High – Z
High – Z
DOUT
High – Z
ICC,ICC1
DOUT
High – Z
DOUT
DOUT
DIN
High – Z
ICC,ICC1
DIN
High – Z
DIN
DIN
H = VIH, L = VIL, X = Don't care.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
SYMBOL
VCC
Input High Voltage
VIH
Input Low Voltage
Input Leakage Current
Output Leakage
Current
VIL
ILI
Output High Voltage
VOH
Output Low Voltage
VOL
*1
VCC = 4.5~5.5V
VCC = 2.7~4.5V
*2
ILO
ICC
Average Operating
Power supply Current
ICC1
ISB
Standby Power
Supply Current
TEST CONDITION
ISB1
VCC ≧ VIN ≧ VSS
VCC ≧ VOUT ≧ VSS
Output Disabled
IOH = -1mA, VCC = 4.5~5.5V
IOH = -1mA, VCC = 2.7~4.5V
IOL = 2mA
Cycle time = Min.
- 55
CE# = VIL and CE2 = VIH
II/O = 0mA
- 70
Other pins at VIL or VIH
Cycle time = 1µs
CE#≦0.2V and CE2≧VCC-0.2V
II/O = 0mA
Other pins at 0.2V or VCC-0.2V
CE# = VIH or CE2 = VIL
Other pins at VIL or VIH
CE# ≧VCC-0.2V
-LL
or CE2≦0.2V
Other pins at 0.2V or VCC-0.2V -LLI
MIN.
2.7
2.4
2.2
- 0.2
-1
TYP.
3.0
-
*4
MAX.
5.5
VCC+0.3
VCC+0.3
0.6
1
UNIT
V
V
V
V
µA
-1
-
1
µA
2.4
2.2
-
-
0.4
V
V
V
-
45
60
mA
-
30
45
mA
-
8
16
mA
-
0.3
2
mA
-
10
60
µA
-
10
100
µA
Notes:
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at VCC = VCC(TYP.) and TA = 25℃
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
6
8
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
UNIT
pF
pF
®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM.
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
tBA
tBHZ*
tBLZ*
SYM.
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tOW*
tWHZ*
tBW
LY62W102516-55
MIN.
MAX.
55
55
55
30
10
5
20
20
10
55
25
10
-
LY62W102516-70
MIN.
MAX.
70
70
70
35
10
5
25
25
10
70
30
10
-
UNIT
LY62W102516-55
MIN.
MAX.
55
50
50
0
45
0
25
0
5
20
45
-
LY62W102516-70
MIN.
MAX.
70
60
60
0
55
0
30
0
5
25
60
-
UNIT
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
CE2
LB#,UB#
tBA
OE#
tOE
tOH
tOHZ
tBHZ
tCHZ
tOLZ
tBLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE#is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low, CE2 = high, LB# or UB# = low.
3.Address must be valid prior to or coincident with CE# = low, CE2 = high, LB# or UB# = low transition; otherwise tAA is the limiting
parameter.
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
WRITE CYCLE 1 (WE# Controlled) (1,2,4,5)
tWC
Address
tAW
CE#
tCW
CE2
tBW
LB#,UB#
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
Din
(4)
tDH
Data Valid
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,4,5)
tWC
Address
tAW
CE#
tAS
tWR
tCW
CE2
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
WRITE CYCLE 3 (LB#,UB# Controlled) (1,4,5)
tWC
Address
tAW
tWR
CE#
tAS
tCW
CE2
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Notes :
1.A write occurs during the overlap of a low CE#, high CE2, low WE#, LB# or UB# = low.
2.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed
on the bus.
3.During this period, I/O pins are in the output state, and input signals must not be applied.
4.If the CE#, LB#, UB# low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a
high impedance state.
5.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
VCC for Data Retention
VDR
CE#≧VCC - 0.2V or CE2≦0.2V
VCC = 1.5V
-LL
Data Retention Current
IDR
CE# ≧VCC-0.2V or CE2≦0.2V
other pins at 0.2V or VCC-0.2V -LLI
Chip Disable to Data
See Data Retention
tCDR
Retention Time
Waveforms (below)
Recovery Time
tR
tRC* = Read Cycle Time
MIN.
1.5
TYP.
-
MAX.
5.5
UNIT
V
-
8
50
µA
-
8
80
µA
0
-
-
ns
tRC*
-
-
ns
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (CE# controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Low Vcc Data Retention Waveform (2) (CE2 controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE2
tR
CE2 ≦ 0.2V
VIL
VIL
Low Vcc Data Retention Waveform (3) (LB#, UB# controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
LB#,UB#
VIH
tR
LB#,UB# ≧ Vcc-0.2V
VIH
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
®
LY62W102516
Rev. 1.1
1024K X 16 BIT LOW POWER CMOS SRAM
PACKAGE OUTLINE DIMENSION
48-pin 12mm x 20mm TSOP-I Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY62W102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.1
ORDERING INFORMATION
Package
Type
48-Pin
12mmx20mm
TSOP-I
Access Time
(Speed)(ns)
Power Type
55
Ultra Low Power
Temperature
Range(℃)
0℃~70℃
-40℃~85℃
70
Ultra Low Power
0℃~70℃
-40℃~85℃
Packing
Type
Tray
LY62W102516LL-55LL
Tape Reel
LY62W102516LL-55LLT
Tray
LY62W102516LL-55LLI
Tape Reel
LY62W102516LL-55LLIT
Tray
LY62W102516LL-70LL
Tape Reel
LY62W102516LL-70LLT
Tray
LY62W102516LL-70LLI
Tape Reel
LY62W102516LL-70LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
Lyontek Item No.
®
LY62W102516
Rev. 1.1
1024K X 16 BIT LOW POWER CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
Similar pages