Vishay AU1PK Surface mount ultrafast avalanche rectifier Datasheet

New Product
AU1PD thru AU1PM
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Vishay General Semiconductor
Surface Mount Ultrafast Avalanche Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
®
eSMP Series
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast recoveray times for high frequency
• Low reverse current
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• AEC-Q101 qualified
DO-220AA (SMP)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
200 V to 1000 V
IFSM
30 A, 25 A
trr
75 ns
IR
1 μA
EAS
20 mJ
TJ max.
175 °C
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/AC and DC/DC converters
in high temperature conditions for both consumer and
automotive applications.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
AU1PD
AU1PG
AU1PJ
AU1PK
AU1PM
AUD
AUG
AUJ
AUK
AUM
200
400
600
800
1000
UNIT
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
Non-repetitive avalanche energy
at IAS = 1.0 A, TA = 25 °C
EAS
20
mJ
TJ, TSTG
- 55 to + 175
°C
Operating junction and storage temperature range
Revision: 30-Sep-11
1.0
30
V
A
25
A
Document Number: 89291
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
AU1PD thru AU1PM
www.vishay.com
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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
IF = 1.0 A
Maximum reverse current
Rated VR
AU1PD
AU1PG
VF (1)
TA = 125 °C
TA = 25 °C
AU1PJ
AU1PM
1.85
1.4
1.6
1.0
μA
75
CJ
UNIT
V
100
trr
4.0 V, 1 MHz
AU1PK
1.5
IR (2)
TA = 125 °C
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Maximum reverse recovery time
Typical junction capacitance
SYMBOL
TA = 25 °C
ns
11
7.5
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
AU1PD
AU1PG
AU1PJ
RJA (1)
132
RJM (1)
15
AU1PK
AU1PM
UNIT
°C/W
Note
(1) Free air, mounted on recommended copper pad area. Thermal resistance R
JA - junction to ambient, RJM - junction to mount at the terminal
cathode band
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
AU1PJ-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
AU1PJ-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
AU1PJHM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
(1)
0.024
85A
10 000
13" diameter plastic tape and reel
AU1PJHM3/85A
Note
Automotive grade
(1)
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
1.6
Resistive or Inductive Load
AU1PD thru AU1PJ
AU1PD thru AU1PJ
1.4
1.0
Average Power Loss (W)
Average Forward Rectified Current (A)
1.2
0.8
AU1PK thru AU1PM
0.6
0.4
0.2
0
100
TM Measured
at the Cathode Band Terminal
D = 0.5
D = 0.8
D = 0.3
D = 0.2
1.2
D = 1.0
D = 0.1
1.0
0.8
0.6
T
0.4
0.2
D = tp/T
tp
0.8
1.0
0
110
120
130
140
150
160
170
180
0
0.2
0.4
0.6
1.2
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 30-Sep-11
Document Number: 89291
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
AU1PD thru AU1PM
www.vishay.com
Vishay General Semiconductor
1000
1.6
Average Power Loss (W)
1.4
D = 0.5
D = 0.3
D = 0.8
Instantaneous Reverse Current (μA)
AU1PK thru AU1PM
D = 0.2
1.2
D = 1.0
D = 0.1
1.0
0.8
0.6
T
0.4
0.2
D = tp/T
tp
TA = 125 °C
10
TA = 75 °C
1
TA = 25 °C
0.1
AU1PD thru AU1PJ
0.01
0
0.2
0
0.4
0.8
0.6
1.0
1.2
10
30
40
50
60
70
80
90
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Characteristics
100
Instantaneous Reverse Current (μA)
1000
TA = 175 °C
TA = 125 °C
1
TA = 75 °C
TA = 25 °C
AU1PD thru AU1PJ
0.1
0.4
0.8
1.2
1.6
2.0
2.4
TA = 175 °C
100
TA = 125 °C
10
TA = 75 °C
1
0.1
TA = 25 °C
AU1PK thru AU1PM
0.01
2.8
10
20
30
40
50
60
70
Fig. 4 - Typical Instantaneous Forward Characteristics
90
100
Fig. 7 - Typical Reverse Characteristics
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 125 °C
TA = 75 °C
0.1
TA = 25 °C
Junction Capacitance (pF)
TA = 175 °C
1
80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
20
Average Forward Current (A)
10
Instantaneous Forward Current (A)
TA = 175 °C
100
10
AU1PD thru AU1PJ
AU1PK thru AU1PM
AU1PK thru AU1PM
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
1
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 8 - Typical Junction Capacitance
Revision: 30-Sep-11
100
Document Number: 89291
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
AU1PD thru AU1PM
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
1000
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 9 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.158 (4.00)
0.146 (3.70)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
Revision: 30-Sep-11
0.025 0.030
(0.635) (0.762)
0.100
(2.54)
0.050
(1.27)
Document Number: 89291
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 12-Mar-12
1
Document Number: 91000
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