AP18P10GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
D
▼ Simple Drive Requirement
D
D
BVDSS
-100V
RDS(ON)
180mΩ
ID
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
SO-8
S
S
S
-2.7A
G
D
Description
AP18P10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
VDS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
+20
V
-2.7
A
-2.1
A
-10
A
2.5
W
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient3
50
℃/W
Data and specifications subject to change without notice
1
201501082
AP18P10GM-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-100
-
-
V
VGS=-10V, ID=-2A
-
-
180
mΩ
VGS=-4.5V, ID=-1A
-
-
210
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
-
8.4
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-2A
-
14
22.4
nC
Qgs
Gate-Source Charge
VDS=-50V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
VDS=-50V
-
10
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
55
-
ns
tf
Fall Time
VGS=-10V
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500 2400
pF
Coss
Output Capacitance
VDS=-25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-2A, VGS=0V,
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
75
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board,t < 10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18P10GM-HF
40
20
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
T A = 25 C
30
-10V
-7.0V
-5.0V
-4.5V
T A = 150 o C
16
-ID , Drain Current (A)
o
20
12
8
V G = - 3.0V
10
4
V G = - 3.0V
0
0
0
4
8
12
16
20
24
0
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2.4
ID=-2A
V G =-10V
ID=-2A
T A =25 ℃
2.0
Normalized RDS(ON)
RDS(ON) (mΩ )
150
140
1.6
1.2
130
0.8
0.4
120
2
4
6
8
-50
10
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.4
1.2
Normalized VGS(th)
-IS(A)
6
4
T j =150 o C
T j =25 o C
1
0.8
2
0.6
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18P10GM-HF
f=1.0MHz
2400
I D = -2A
V DS = -50V
2000
8
1600
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
1200
4
800
2
400
C oss
C rss
0
0
0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (R thja)
Duty factor=0.5
-ID (A)
10
100us
Operation in this area
limited by RDS(ON)
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
0.01
0.1
1
10
100
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthja=125oC/W
0.001
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP18P10GM-HF
MARKING INFORMATION
Part Number
18P10GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5