ZP CJU04N60A Plastic-encapsulate mosfet Datasheet

CJU04N60A
TO-252-2L Plastic-Encapsulate MOSFETS
CJU04N60A N-Channel Power MOSFET
TO-252-2L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z
High Current Rating
Lower RDS(on)
z
Lower Capacitance
z
z
Lower Total Gate Charge
z
Tighter VSD Specifications
z
Avalanche Energy Specified
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current
ID
4.0
Pulsed Drain Current
IDM
16
Single Pulsed Avalanche Energy (note1)
EAS
260
mJ
Thermal Resistance from Junction to Ambient
RθJA
100
℃/W
TJ, TSTG
-55 ~+150
TL
260
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
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V
A
℃
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CJU04N60A
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
600
V
Drain-source diode forward voltage(note2)
VSD
VGS = 0V, IS =4.0A
1.5
Zero gate voltage drain current
IDSS
VDS =600V, VGS =0V
25
µA
Gate-body leakage current (note2)
IGSS
VDS =0V, VGS =±30V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
4.0
V
Static drain-source on-resistance
RDS(on)
VGS =10V, ID =2.0A
3.0
Ω
On characteristics (note2)
Forward transconductance
gfs
VDS =50V, ID =2A
2.0
2.0
2.5
S
Dynamic characteristics (note 3)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
760
VDS =25V,VGS =0V,f =1MHz
180
pF
20
Switching characteristics (note 3)
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time (note3)
td(on)
Turn-on rise time (note3)
Turn-off delay time (note3)
Turn-off fall time (note3)
tr
td(off)
5.0
VDS =480V,VGS =10V,ID =4.0A
10
nC
2.7
2.0
20
VDD=300V, VGS=10V,
10
RG=9.1Ω, ID =4.0A
40
tf
ns
20
Notes :
1.
L=30mH, IL=4 A, VDD=100V, VGS=10V,RG=25Ω,Starting TJ=25℃.
2.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3.
These parameters have no way to verify.
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