T PL IA N M CO *R oH S Features Applications n RoHS compliant* n Switch Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters LE AD FR EE n Telecommunications CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode General Information Ro VE LEA HS RS D CO ION FRE M SA E PL R IA E NT * Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip package compatible with DO-214AC (SMA) size format. The Schottky Rectifier Diodes offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Operating Junction Temperature Range Storage Temperature Range Symbol VRRM B320R 20 B320LR 20 CD214AB340R 40 B340LR 40 B360R 60 Unit V IF(AV) 3 A IFSM 80 A TOPR -55 to +125 °C -55 to +150 °C TSTG Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Maximum Instantaneous Forward Voltage (NOTE 1) DC Reverse Current Typical Junction Capacitance NOTE: Symbol VF IR CJ (1) Pulse width 300 microsecond, 1 % duty cycle. Condition or Model CD214A-B320R CD214A-B340R IF = 1 A CD214A-B360R CD214A-B320LR CD214A-B340LR CD214A-B320R CD214A-B340R IF = 3 A CD214A-B360R VR = VRRM VR = 4 V, f = 1.0 MHz Min. CD214A-B320LR CD214A-B340LR CD214A-B320R CD214A-B340R CD214A-B360R CD214A-B320LR CD214A-B340LR CD214A-B320R CD214A-B340R CD214A-B360R CD214A-B320LR CD214A-B340LR Typ. Max. Unit 0.37 0.42 0.3 0.46 0.5 0.58 0.7 0.39 0.42 0.02 0.2 0.55 1 V mA 160 135 pF 120 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Continued on next page. 3312 - 2 mm SMD Trimming Potentiometer CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Junction to Ambient RθJA Typical Thermal Resistance (NOTE 2) Junction to Lead NOTE: RθJL Condition or Model CD214A-B320R CD214A-B340R CD214A-B360R CD214A-B320LR CD214A-B340LR CD214A-B320R CD214A-B340R CD214A-B360R CD214A-B320LR CD214A-B340LR Min. Typ. Max. Unit 86 55 24 17 (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. °C/W CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode Performance Graphs 1.0 1.0 1.0 3.0 3.0 2.0 2.0 RESISTIVE 1.0 OR RESISTIVE OR RESISTIVE OR RESISTIVE 1.0 OR RESISTIVE OR INDUCTIVE LOAD INDUCTIVELOAD LOAD INDUCTIVE LOAD INDUCTIVE INDUCTIVE LOAD PCB MOUNTED PCBMOUNTED MOUNTED ON PCBON MOUNTED ON PCB PCB ON MOUNTED ON 5.0 5.0 MM (0.2 x 0.2 IN.) 5.0xxx5.0 5.0MM MM (0.2 0.2 IN.) 5.0 x 5.0 MM (0.2 x 0.2 IN.) 5.0 xx0.2 5.0(0.2 x 5.0 MMIN.) (0.2 x 0.2 IN.) COPPER PAD AREAS COPPERPAD PAD AREASPAD AREAS COPPER COPPER AREAS COPPER PAD AREAS 0 0 00 0250 75 100 0 25 50 5025 7550 100 75 00 25 50 75 100 0 25 50 75 125 125 100 125 100 Lead Temperature (°C) LeadTemperature Temperature (°C) LeadTemperature Temperature (°C) Lead (°C) Lead (°C) 150 150 125 150 125 150 150 Typical Instantaneous Forward Characteristics 10 10 10 80 80 80 70 70 70 60 60 60 50 50 50 40 40 40 30 30 30 20 20 20 10 10 10 Peak PeakForward ForwardSurge SurgeCurrent Current(Amps) (Amps) 2.0 2.0 2.0 Maximum Peak Forward Surge Current Peak PeakForward ForwardSurge SurgeCurrent Current(Amps) (Amps) Peak Forward Surge Current (Amps) 3.0 3.0 3.0 Average AverageForward ForwardRectified RectifiedCurrent Current(Amps) (Amps) Average AverageForward ForwardRectified RectifiedCurrent Current(Amps) (Amps) Average Forward Rectified Current (Amps) Forward Current Derating Curve 0 00 0 00 80 80 8.3 ms 8.3ms ms 8.3 ms 8.3 8.3 ms Single Half SingleHalf Half Single Half Single Single Half Sine-Wave Sine-Wave Sine-Wave Sine-Wave Sine-Wave 70 70 60 60 (JEDEC Method) (JEDECMethod) Method) (JEDEC Method) (JEDEC (JEDEC Method) 50 50 40 40 30 30 20 20 10 10 0 0 0 0 10 10 10 100 100 100 10 10 Number of Cycles @ 60 Hz Numberof of Cyclesof @Cycles 60Hz Hz@ Number of Cycles @60 60Hz Hz Number Cycles @ 60 Number 100 100 Typical Reverse Characteristics 100 100 100 10 10 100 100 0.01 0.01 0.01 0.001 0.001 0.001 0 00 1 1 0.10 0.10 CD214A-B320R, -B340R CD214A-B320R, -B340R CD214A-B320R, -B340R CD214A-B320R, -B340R CD214A-B320R, -B340R CD214A-B360R CD214A-B360R CD214A-B360R CD214A-B360R CD214A-B360R CD214A-B320LR, -B340LR CD214A-B320LR, -B340LR -B340LR CD214A-B320LR, CD214A-B320LR, -B340LR CD214A-B320LR, -B340LR 0.01 0.01 0.001 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0 0.2 0.20.1 0.3 0.30.2 0.4 0.40.3 0.5 0.50.4 0.6 0.60.5 0.7 0.7 0.6 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 10 10 10 1 11 0.1 0.1 0.1 0.01 0.01 0.01 0.7 0.7 Instantaneous Forward Voltage (Volts) Instantaneous ForwardVoltage Voltage (Volts) Instantaneous Forward(Volts) Voltage(Volts) (Volts) Instantaneous Forward Instantaneous Forward Voltage Instantaneous InstantaneousReverse ReverseCurrent Current(mA) (mA) 0.10 0.10 0.10 Instantaneous InstantaneousReverse ReverseCurrent Current(mA) (mA) Instantaneous Reverse Current (mA) 1 11 Instantaneous InstantaneousForward ForwardCurrent Current(A) (A) Instantaneous InstantaneousForward ForwardCurrent Current(A) (A) Instantaneous Forward Current (A) T = 80 °C 80°C °C TJ = 80 °C TTJJJ==80 TJ = 80 °C 0.001 0.001 0.001 0 00 10 10 T = 100 °C 100°C °CTJ = 100 °C TTJJJ==100 TJ = 100 °C 1 1 T = 100 °C 100°C °CTJ = 100 °C TTJJJ==100 TJ = 100 °C 0.1 0.1 T = 25 °C 25°C °C TJ = 25 °C TTJJJ==25 TJ = 25 °C TJ0.01 25 °C 25°C °C TJ = 25 °C J===25 TTJ0.01 TJ = 25 °C 0.001 0.001 20 20 0 20 0 CD214A-B320R, -B340R CD214A-B320R, -B340R CD214A-B320R, -B340R CD214A-B320R, -B340R CD214A-B320R, -B340R CD214A-B360R CD214A-B360R CD214A-B360R CD214A-B360R CD214A-B360R CD214A-B320LR, -B340LR CD214A-B320LR, -B340LR -B340LR CD214A-B320LR, CD214A-B320LR, -B340LR CD214A-B320LR, -B340LR 40 40 20 40 20 60 60 40 60 40 80 80 60 80 60 100 100 80 100 80 100 100 Percent ofof Rated Peak Reverse Voltage (%) Percentof RatedPeak Peak Reverse Voltage (%) Percent of Rated PeakVoltage Reverse(%) Voltage(%) (%) Percent Rated Reverse Percent of Rated Peak Reverse Voltage Typical Junction Capacitance 100 100 100 1000 1000 Junction JunctionCapacitance Capacitance(pF) (pF) Junction JunctionCapacitance Capacitance(pF) (pF) Junction Capacitance (pF) 1000 1000 1000 10 10 10 0.1 0.1 0.1 T = 25 °C 25°C °C TJ = 25 °C TTJJ==25 T = 25 °C f =J 1.0 MHz 1.0MHz MHzf J= 1.0 MHz f f==1.0 f = 1.0 MHz VVsig ==50 mVP-P 50 mVP-P V = 50 mVP-P sig sig Vsig = 50 mVP-P Vsig = 50 mVP-P 100 100 CD214A-B3 SERIES CD214A-B3SERIES SERIES CD214A-B3 SERIES CD214A-B3 CD214A-B3 SERIES 10 10 0.1 10 1.0 10 1.0 1.0 10 1.0 0.1 1.0 10 10 100 100 100 Reverse Voltage (Volts) ReverseVoltage Voltage (Volts) Reverse(Volts) Voltage(Volts) (Volts) Reverse Reverse Voltage 100 100 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A F C DIA. B G H I D D Dimension CD214A-B3 Series F 2.60 MAX. (0.102) G 1.47 MIN. (0.058) H 1.27 MIN. (0.050) I 5.14 REF. (0.202) E Dimension CD214A-B3 Series A 4.5 ± 0.10 (0.177 ± 0.004) B 2.20 ± 0.10 (0.087 ± 0.004) C (Dia.) 0.50 (0.020) D 0.95 ± 0.20 (0.037 ± 0.008) E 0.96 +0.20/-0.10 (0.038 +0.008/-0.004) DIMENSIONS: MM (INCHES) MM (INCHES) Environmental Specifications Moisture Sensitivity Level.................................................................1 ESD Classification (HBM)............................................................. 3B Typical Part Marking How to Order CD 214A - B 3 20 L R Common Code CD = Chip Diode Package 214A = SMA/DO-214AC Compatible Model B = Schottky Barrier Series Maximum Average Forward Rectified Current 3=3A Maximum Repetitive Peak Reverse Voltage 20 = 20 V 40 = 40 V 60 = 60 V Forward Voltage Suffix L = Low Forward Voltage DIMENSIONS: DATE CODE: Y = LAST DIGIT OF YEAR WW = WEEK NUMBER 302 YWW Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. DEVICE CODE: 302 = CD214A-B320R 302L = CD214A-B320LR 304 = CD214A-B340R 304L = CD214A-B340LR 306 = CD214A-B360R 3312 - 2 mmSeries SMDSchottky Trimming Potentiometer CD214A-B3xR Barrier Rectifier Chip Diode Packaging Information The product is dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D1 D P A Trailer End D2 W B ....... ....... C Device ....... ....... Leader ....... ....... ....... ....... 30 pitches W1 Start DIMENSIONS: MM (INCHES) 30 pitches Direction of Feed Item Symbol CD214A-B3 Series Carrier Width A 2.45 ± 0.10 (0.096 ± 0.004) Carrier Length B 4.75 ± 0.10 (0.187 ± 0.004) Carrier Depth C 1.51 ± 0.10 (0.059 ± 0.004) Sprocket Hole d 1.50 ± 0.10 (0.059 ± 0.004) Reel Outside Diameter D 178 ± 2.0 (7.008 ± 0.079) Reel Inner Diameter D1 50.0 MIN. (1.969) D2 13.0 ± 0.50 (0.512 ± 0.020) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.10 (0.079 ± 0.004) Feed Hole Diameter Overall Tape Thickness T Tape Width W Reel Width W1 Quantity per Reel -- Asia-Pacific: Tel: +886-2 2562-4117 Email: [email protected] Europe: Tel: +36 88 520 390 Email: [email protected] The Americas: Tel: +1-951 781-5500 Email: [email protected] www.bourns.com 0.40 MAX. (0.016) 12.00 ± 0.30 (0.472 ± 0.012) 18.7 MAX. (0.736) 3,000 01/18 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.