ACE2N7002A N-Channel Enhancement Mode MOSFET Description The ACE2N7002A is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features 60V/0.50A , RDS(ON)= 6.0Ω@VGS=10V 60V/0.30A , RDS(ON)= 7.0Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23-3 and SOT-323 package design Applications Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. High saturation current capability. Direct Logic-Level Interface: TTL/CMOS Battery Operated Systems Solid-State Relays Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Gate –Source Voltage - Non Repetitive ( tp < 50μs) VGSS ±40 V ID 0.5 A IDM 1.0 A PD 0.35 A Operating Junction Temperature TJ -55~150 W Storage Temperature Range TSTG -55~150 O Continuous Drain Current (TJ=150℃) TA=25℃ Pulsed Drain Current(*) Power Dissipation Thermal Resistance-Junction to Ambient TA=25℃ RθJA 375 O C C /W (*) Pulse width limited by safe operating area VER 1.1 1 ACE2N7002A N-Channel Enhancement Mode MOSFET Packaging Type TSOT-23-3/SOT-323 Pin Description Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Ordering information ACE2N7002A XX + H Halogen - free Pb - free BMS: TSOT-23-3 CM: SOT-323 VER 1.1 2 ACE2N7002A N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 60 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V 1 VDS=48V, VGS=0V, TJ=55℃ 10 Drain-Source On-Resistance RDS(ON) Source-drain Current ISD 0.35 A Source-drain Current (pulsed) ISDM (2) 1.4 A Forward Trans Conductance gfs(1) VDS=10V, ID=0.5A 0.6 S Diode Forward Voltage VSD(1) VGS=0V, IS=-0.12A 0.85 V 1.7 2.5 VGS=10V, ID=0.5A 2.5 6.0 VGS=5V, ID=0.3A 3.3 7.0 V uA uA Ω Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDD=30V, VGS=5V, ID≡1A nC 43 60 20 30 Crss 6 10 td(on) 5 20 VDS = 25 V, f = 1 MHz, VGS = 0 tr VDD=30V, ID≡0.5A, RG=4.7Ω, 15 td(off) VGS=4.5V 7 tf (1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 20 pF ns 8 VER 1.1 3 ACE2N7002A N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.1 4 ACE2N7002A N-Channel Enhancement Mode MOSFET VER 1.1 5 ACE2N7002A N-Channel Enhancement Mode MOSFET Typical Testing Circuit VER 1.1 6 ACE2N7002A N-Channel Enhancement Mode MOSFET Packing Information TSOT-23-3 VER 1.1 7 ACE2N7002A N-Channel Enhancement Mode MOSFET Packing Information SOT-323 VER 1.1 8 ACE2N7002A N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 9