Siemens C67070-A2704-A67 Igbt power module (half-bridge including fast free-wheeling diodes package with insulated metal base plate) Datasheet

BSM 150 GB 170 DN2
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• RG on,min = 10 Ohm
Type
VCE
IC
BSM 150 GB 170 DN2
1700V 220A
Package
Ordering Code
HALF-BRIDGE 2
C67070-A2704-A67
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
1700
Unit
V
1700
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
220
TC = 80 °C
150
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
440
TC = 80 °C
300
Ptot
Power dissipation per IGBT
TC = 25 °C
W
1250
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.1
Diode thermal resistance, chip case
RthJCD
≤ 0.32
Insulation test voltage, t = 1min.
Vis
Creepage distance
+ 150
°C
-55 ... + 150
K/W
4000
Vac
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
1
-
55 / 150 / 56
Aug-01-1996
BSM 150 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 10 mA
V
4.8
5.5
6.2
VGE = 15 V, IC = 150 A, Tj = 25 °C
-
3.4
3.9
VGE = 15 V, IC = 150 A, Tj = 125 °C
-
4.6
5.3
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
mA
VCE = 1700 V, VGE = 0 V, Tj = 25 °C
-
1
1.5
VCE = 1700 V, VGE = 0 V, Tj = 125 °C
-
4
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
nA
-
-
400
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 150 A
Input capacitance
54
nF
-
20
-
-
2
-
-
0.55
-
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Aug-01-1996
BSM 150 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 1200 V, VGE = 15 V, IC = 150 A
RGon = 10 Ω
Rise time
-
520
1000
-
200
400
-
1200
1800
-
110
160
tr
VCC = 1200 V, VGE = 15 V, IC = 150 A
RGon = 10 Ω
Turn-off delay time
td(off)
VCC = 1200 V, VGE = -15 V, IC = 150 A
RGoff = 10 Ω
Fall time
tf
VCC = 1200 V, VGE = -15 V, IC = 150 A
RGoff = 10 Ω
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 150 A, VGE = 0 V, Tj = 25 °C
-
2.3
2.8
IF = 150 A, VGE = 0 V, Tj = 125 °C
-
2.1
-
Reverse recovery time
trr
µs
IF = 150 A, VR = -1200 V, VGE = 0 V
diF/dt = -1200 A/µs, Tj = 125 °C
Reverse recovery charge
-
0.6
-
Qrr
µC
IF = 150 A, VR = -1200 V, VGE = 0 V
diF/dt = -1200 A/µs
Tj = 25 °C
-
11
-
Tj = 125 °C
-
36
-
Semiconductor Group
3
Aug-01-1996
BSM 150 GB 170 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
1300
tp = 1.5µs
W
A
1100
Ptot
IC
1000
10 µs
10 2
900
100 µs
800
700
10 1
1 ms
600
500
10 ms
400
10 0
300
DC
200
100
0
0
20
40
60
80
100
120
°C
10 -1
0
10
160
10
1
10
2
10
3
TC
V
VCE
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
240
A
K/W
200
IC
ZthJC
180
10 -1
160
140
10 -2
120
D = 0.50
100
0.20
0.10
80
10 -3
60
0.05
single pulse
0.02
40
0.01
20
0
0
20
40
60
80
100
120
°C
160
TC
Semiconductor Group
10 -4
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
Aug-01-1996
BSM 150 GB 170 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
300
300
A
A
260
IC
240
220
200
260
17V
15V
13V
11V
9V
7V
IC
240
220
200
180
180
160
160
140
140
120
120
100
100
80
80
60
60
40
40
20
0
0.0
20
0
0.0
1.0
2.0
3.0
4.0
V
6.0
VCE
17V
15V
13V
11V
9V
7V
1.0
2.0
3.0
4.0
V
6.0
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
600
A
500
IC
450
400
350
300
250
200
150
100
50
0
0
2
4
Semiconductor Group
6
8
10
V
14
VGE
5
Aug-01-1996
BSM 150 GB 170 DN2
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 150 A
C = f (VCE)
parameter: VGE = 0, f = 1 MHz
10 2
20
V
nF
VGE
16
C
800 V
14
1200 V
Ciss
10 1
12
10
Coss
8
10 0
6
Crss
4
2
0
0.0
0.4
0.8
1.2
1.6
µC
10 -1
0
2.2
5
10
15
20
25
30
V
40
VCE
QGate
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH
2.5
12
ICpuls/IC
ICsc/IC
8
1.5
6
1.0
4
0.5
2
0.0
0
0
250
500
Semiconductor Group
750
1000 1250 1500
V
2000
VCE
6
0
250
500
750
1000 1250 1500
V
2000
VCE
Aug-01-1996
BSM 150 GB 170 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 10 Ω
par.: VCE = 1200 V, VGE = ± 15 V, IC = 150 A
10 4
10 4
ns
ns
t
tdoff
t
tdoff
10 3
10 3
tdon
tdon
tr
tr
tf
10 2
10 1
0
50
100
150
200
250
A
IC
tf
10 2
10 1
0
350
10
20
30
40
Ω
60
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 10 Ω
par.: VCE = 1200 V, VGE = ± 15 V, IC = 150 A
400
400
mWs
mWs
E
E
300
300
Eon
250
250
200
200
150
Eon
150
Eoff
100
100
Eoff
50
0
0
50
50
100
Semiconductor Group
150
200
250
A
IC
350
7
0
0
10
20
30
40
Ω
60
RG
Aug-01-1996
BSM 150 GB 170 DN2
Forward characteristics of fast recovery
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
reverse diode IF = f(VF)
parameter: Tj
10 0
300
A
K/W
Tj=125°C
260
IF
Diode
240
Tj=25°C
ZthJC
10 -1
220
200
180
160
10 -2
140
D = 0.50
120
0.20
0.10
100
0.05
10 -3
80
0.02
60
single pulse
0.01
40
20
0
0.0
0.5
1.0
Semiconductor Group
1.5
2.0
2.5
V
VF
3.5
10 -4
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
8
Aug-01-1996
BSM 150 GB 170 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
Semiconductor Group
9
Aug-01-1996
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