AP4N2R6MT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID4
D
▼ Ultra Low On-resistance
40V
2.6mΩ
150A
G
▼ RoHS Compliant & Halogen-Free
D
S
Description
AP4N2R6 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
D
D
D
S
S
S
G
®
PMPAK 5x6
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
Drain Current (Chip), VGS @ 10V
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
4
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
.
Parameter
Symbol
Total Power Dissipation
3
5
Rating
Units
40
V
+20 / -12
V
150
A
33.7
A
27
A
300
A
104
W
5
W
50
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
1.2
℃/W
25
℃/W
1
201603221
AP4N2R6MT
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=20A
-
-
2.6
mΩ
VGS=4.5V, ID=20A
-
-
3.6
mΩ
1.2
-
2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=20A
-
110
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=20V, VDS=0V
-
-
100
nA
Qg
Total Gate Charge
ID=20A
-
54
86
nC
Qgs
Gate-Source Charge
VDS=20V
-
19
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
12
-
ns
tr
Rise Time
ID=20A
-
55
-
ns
td(off)
Turn-off Delay Time
RG=0.5Ω
-
67
-
ns
tf
Fall Time
VGS=10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
7700 12320
pF
Coss
Output Capacitance
VDS=20V
Crss
Rg
-
900
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
20
-
pF
Gate Resistance
f=1.0MHz
-
2.2
4.4
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
54
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 60 C/W at steady state.
4.Package limitation current is 60A .
5.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4N2R6MT
200
240
T C =25 o C
10V
8.0V
7.0V
6.0V
5.0V
V G = 4.0V
160
10V
8.0V
7.0V
6.0V
5.0V
V G = 4.0V
160
ID , Drain Current (A)
ID , Drain Current (A)
200
T C = 150 o C
120
80
120
80
40
40
0
0
0
0.4
0.8
1.2
1.6
2
0
0
V DS , Drain-to-Source Voltage (V)
1
1
2
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
2.7
I D =20A
V G =10V
I D = 20 A
o
T C =25 C
2.5
2.3
.
2.1
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
1.2
0.8
1.9
1.7
0.4
2
4
6
8
10
-100
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
2.0
I D =1mA
Normalized VGS(th)
1.6
IS(A)
10
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
0.0
0.1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4N2R6MT
8
I D = 20 A
V DS =20V
10000
6
C iss
8000
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
12000
4
6000
4000
2
2000
C oss
C rss
0
0
0
20
40
60
80
1
100
11
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
31
41
51
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100
10us
100us
10
1
1ms
10ms
DC
T C =25 o C
Single Pulse
.
Normalized Thermal Response (Rthjc)
1000
ID (A)
21
V DS , Drain-to-Source Voltage (V)
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
0.01
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
200
V DS =5V
160
ID , Drain Current (A)
ID , Drain Current (A)
160
120
80
Limited by package
120
80
T j =150 o C
40
40
0
0
T j =25 o C
o
T j = -55 C
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP4N2R6MT
2
120
I D =1mA
100
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
80
60
40
0.4
20
0
0
-100
-50
T
0
j
50
100
150
0
, Junction Temperature ( o C)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
20
T j =25 o C
RDS(ON) (mΩ)
16
12
.
8
4
4.5V
V GS =10V
0
0
20
40
60
80
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP4N2R6MT
MARKING INFORMATION
Part Number
4N2R6
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6