Mitsubishi MH4S64CBMD-12B 268435456-bit (4194304-word by 64-bit)synchronousdram Datasheet

Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
DESCRIPTION
The MH4S64CBMD is 4194304-word by 64-bit
Synchronous DRAM module. This consists of sixteen
industry standard 2Mx8 Synchronous DRAMs in
TSOP and one industory standard EEPROM in
TSSOP.
The mounting of TSOP on a card edge Dual Inline
package provides any application where high
densities and large quantities of memory are
required.
This is a socket type - memory modules, suitable for
easy interchange or addition of modules.
FEATURES
CLK Access Time
1pin
94pin
10pin
95pin
11pin
124pin
40pin
125pin
41pin
168pin
84pin
(Component SDRAM)
100MHz
8ns(CL=3)
-12,-12B
83MHz
8ns(CL=3)
-15,-15B
67MHz
9ns(CL=3)
Utilizes industry standard 2M x 8 Synchronous DRAMs
TSOP and industry standard EEPROM in TSSOP
168-pin (84-pin dual in-line package)
Front side
-10,-10B
Back side
Frequency
85pin
single 3.3V±0.3V power supply
Clock frequency 100MHz/83MHz/67MHz
Fully synchronous operation referenced to clock rising
edge
Dual bank operation controlled by BA(Bank Address)
/CAS latency- 1/2/3(programmable)
Burst length- 1/2/4/8(programmable)
Burst type- sequential / interleave(programmable)
Column access - random
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycle /64ms
LVTTL Interface
APPLICATION
main memory or graphic memory in computer systems
MIT-DS-0113-1.1
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
PIN NO.
PIN NAME
PIN NO.
PIN NAME
PIN NO.
PIN NAME
PIN NO.
PIN NAME
1
VSS
43
VSS
85
VSS
127
VSS
CKE0
2
DQ0
44
NC
86
DQ32
128
3
DQ1
45
/S2
87
DQ33
129
/S3
4
DQ2
46
DQMB2
88
DQ34
130
DQMB6
5
DQ3
47
DQMB3
89
DQ35
131
DQMB7
6
VDD
48
NC
90
VDD
132
7
DQ4
49
VDD
91
DQ36
133
NC
VDD
8
DQ5
50
NC
92
DQ37
134
NC
9
DQ6
51
NC
93
DQ38
135
NC
10
DQ7
52
NC
94
DQ39
136
NC
11
53
DQ40
137
54
NC
VSS
95
12
DQ8
VSS
96
VSS
138
NC
VSS
13
DQ9
55
DQ16
97
DQ41
139
DQ48
14
DQ10
56
DQ17
98
DQ42
140
DQ49
15
DQ11
57
DQ18
99
DQ43
141
DQ50
16
DQ12
58
DQ19
100
DQ44
142
DQ51
17
DQ13
59
VDD
101
DQ45
143
VDD
18
VDD
60
DQ20
102
VDD
144
DQ52
19
DQ14
61
NC
103
DQ46
145
NC
20
DQ15
62
NC
104
DQ47
146
NC
21
NC
63
105
NC
147
NC
22
64
106
VSS
65
DQ21
107
NC
VSS
148
23
NC
VSS
CKE1
VSS
149
DQ53
24
NC
66
DQ22
108
NC
150
DQ54
25
NC
67
109
NC
151
DQ55
26
68
110
VDD
152
VSS
27
VDD
/WE0
DQ23
VSS
69
DQ24
111
/CAS
153
DQ56
28
DQMB0
70
DQ25
112
DQMB4
154
DQ57
29
DQMB1
71
DQ26
113
DQMB5
155
DQ58
30
/S0
72
DQ27
114
DQ59
NC
73
VDD
115
/S1
/RAS
156
31
157
VDD
32
VSS
74
DQ28
116
VSS
158
DQ60
33
A0
75
DQ29
117
A1
159
DQ61
34
A2
76
DQ30
118
A3
160
DQ62
35
A4
77
DQ31
119
A5
161
DQ63
36
A6
78
VSS
120
A7
162
VSS
37
A8
79
CK2
121
A9
163
CK3
38
A10
80
NC
122
BA
164
NC
39
NC
81
NC
123
NC
165
SA0
40
VDD
82
SDA
124
VDD
166
SA1
41
42
VDD
CK0
83
84
SCL
VDD
125
126
CK1
NC
167
168
SA2
VDD
NC = No Connection
MIT-DS-0113-1.1
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Preliminary Spec.
MITSUBISHI LSIs
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MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
Block Diagram
/S1
/S0
DQMB0
DQMB4
DQM /CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQMB1
DQM /CS
D0
DQM /CS
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D8
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQMB5
DQM /CS
D1
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D9
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQM /CS
DQM /CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4 D12
I/O 5
I/O 6
I/O 7
D4
DQM /CS
DQM /CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4 D13
I/O 5
I/O 6
I/O 7
CK0
CK1
CK2
CK3
D5
D4,D12,D13
4SDRAMs
D0,D1,D5,D8,D9
4SDRAMs
4SDRAMs
D2,D3,D10,D11
4SDRAMs
D6,D7,D14,D15
/S3
/S2
DQMB2
DQMB6
DQM /CS
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQMB3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQM /CS
D2
DQM /CS
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
/RAS
/CAS
/WE
BA,A<10:0>
Vcc
CK,DQ=10Ω
MIT-DS-0113-1.1
Vss
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5 D10
I/O 6
I/O 7
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQMB7
DQM /CS
D3
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
D0 - D17
D0 - D17
D0 - D17
D0 - D17
D0 - D17
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4 D11
I/O 5
I/O 6
I/O 7
D0 - D17
MITSUBISHI
ELECTRIC
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DQM /CS
DQM /CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5 D14
I/O 6
I/O 7
D6
DQM /CS
DQM /CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4 D15
I/O 5
I/O 6
I/O 7
D7
10KΩ
CKE1
CKE0
SCL
SERIAL PD
A0 A1 A2
D9 - D17
D0 - D8
SDA
SA0 SA1 SA2
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
Serial Presence Detect Table
Byte
Function described
SPD enrty data
SPD DATA(hex)
0
Defines # bytes written into serial memory at module mfgr
128
80
1
Total # bytes of SPD memory device
256 Bytes
08
2
Fundamental memory type
SDRAM
04
3
# Row Addresses on this assembly
A0-A10
0B
4
# Column Addresses on this assembly
A0-A8
09
5
# Module Banks on this assembly
2BANK
02
6
Data Width of this assembly...
x64
40
7
... Data Width continuation
0
00
8
Voltage interface standard of this assembly
LVTTL
01
9
SDRAM Cycletime at Max. Supported CAS Latency (CL). -10
Cycle time for CL=3
10
10ns
A0
-12
12ns
C0
-15
15ns
F0
SDRAM Access from Clock
-10
8ns
80
tAC for CL=3
-12
8ns
80
-15
9ns
90
Non-PARITY
00
11
DIMM Configuration type (Non-parity,Parity,ECC)
12
Refresh Rate/Type
self refresh(15.625uS)
80
13
SDRAM width,Primary DRAM
x8
08
14
Error Checking SDRAM data width
n/a
00
1
01
15
Minimum Clock Delay,Back to Back Random Column Addresses
16
Burst Lengths Supported
1/2/4/8
0F
17
# Banks on Each SDRAM device
2bank
02
18
CAS# Latency
CL=1/2/3
06
19
CS# Latency
0
01
20
Write Latency
0
01
21
SDRAM Module Attributes
non-buffered,non-registered
00
22
SDRAM Device Attributes:General
Precharge All,Auto precharge
06
23
SDRAM Cycle time(2nd highest CAS latency)
-10
15ns
F0
Cycle time for CL=2
-12
15ns
F0
-15
20ns
FF
9ns
90
24
SDRAM Access form Clock(2nd highest CAS latency) -10
tAC for CL=2
25
26
27
28
-12
9.5ns
95
-15
12ns
C0
SDRAM Cycle time(3rd highest CAS latency)
-10
30ns
78
Cycle time for CL=1
-12
30ns
78
-15
30ns
78
SDRAM Access form Clock(3rd highest CAS latency)
-10
27ns
6C
tAC for CL=1
-12
27ns
6C
-15
30ns
78
-10
30ns
1E
-12
30ns
1E
-15
40ns
28
-10
20ns
14
-12
24ns
18
-15
30ns
1E
Precharge to Active Minimum
Row Active to Row Active Min.
MIT-DS-0113-1.1
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
Serial Presence Detect Table
29
RAS to CAS Delay Min
30
Active to Precharge Min
-10
30ns
1E
-12
30ns
1E
-15
30ns
1E
-10
60ns
3C
-12
70ns
46
-15
80ns
50
31
Density of each bank on module
16MByte
04
32-61
Superset Information (may be used in future)
option
00
01
62
SPD Revision
rev 1
63
Checksum for bytes 0-62
Check sum for -10
A0
Check sum for -12
D3
64-71
Manufactures Jedec ID code per JEP-108E
72
73-90
Manufacturing location
Manufactures Part Number
Check sum for -15
73
MITSUBISHI
1CFFFFFFFFFFFFFF
Miyoshi,Japan
01
Tajima,Japan
02
NC,USA
03
Germany
04
MH4S64CBMD-10
4D483453363443424D442D31302020202020
MH4S64CBMD-12
4D483453363443424D442D31322020202020
MH4S64CBMD-15
MH4S64CBMD-10B
4D483453363443424D442D31352020202020
4D483453363443424D442D31304220202020
MH4S64CBMD-12B
4D483453363443424D442D31324220202020
MH4S64CBMD-15B
4D483453363443424D442D31354220202020
91-92
Revision Code
PCB revision
rrrr
93-94
Manufacturing date
year/week code
yyww
Assembly Serial Number
serial number
ssssssss
99-125
95-98
Manufacture Specific Data
option
00
126
Intetl specification frequency
66MHz
66
127
Intel specification CAS# Latency support
CL=3: 04H, CL=2/3: 06H
06
128+
Unused storage locations
open
00
MIT-DS-0113-1.1
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
PIN FUNCTION
Input
Master Clock:All other inputs are referenced to the rising
edge of CK
CKE0,1
Input
Clock Enable:CKE controls internal clock.When CKE is
low,internal clock for the following cycle is ceased. CKE is
also used to select auto / self refresh. After self refresh
mode is started, CKE E becomes asynchronous input.Self
refresh is maintained as long as CKE is low.
/S
(/S0 ~ /S3)
Input
Chip Select: When /S is high,any command means
No Operation.
Input
Combination of /RAS,/CAS,/WE defines basic commands.
A0-10
Input
A0-10 specify the Row/Column Address in conjunction with
BA.The Row Address is specified by A0-10.The Column
Address is specified by A0-8.A10 is also used to indicate
precharge option.When A10 is high at a read / write
command, an auto precharge is performed. When A10 is
high at a precharge command, both banks are precharged.
BA
Input
Bank Address:BA is not simply BA.BA specifies the bank
to which a command is applied.BA must be set with
ACT,PRE,READ,WRITE commands
CK
(CK0 ~ CK3)
/RAS,/CAS,/WE
DQ0-63
DQMB0-7
Vdd,Vss
Input/Output Data In and Data out are referenced to the rising edge of
CK
Input
Din Mask/Output Disable:When DQMB is high in burst
write.Din for the current cycle is masked.When DQMB is high
in burst read,Dout is disabled at the next but one cycle.
Power Supply Power Supply for the memory mounted module.
SCL
Input
Serial clock for serial PD
SDA
Output
Serial data for serial PD
SA0-3
Input
MIT-DS-0113-1.1
Address input for serial PD
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
BASIC FUNCTIONS
The MH4S64CBMD provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
precharge option,respectively.
To know the detailed definition of commands please see the command truth table.
CK
/S
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh
command
Precharge Option @precharge or read/write
command
A10
define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read(READ) [/RAS =H,/CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA.First output
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,READA).
Write(WRITE) [/RAS =H, /CAS = /WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank is
deactivated after the burst write(auto-precharge,WRITEA).
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
PRE command deactivates the active bank indicated by BA. This command also
terminates burst read / write operation. When A10 =H at this command, both banks are
deactivated(precharge all, PREA).
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
PEFA command starts auto-refresh cycle. Refresh address including bank address are
generated internally. After this command, the banks are precharged automatically.
MIT-DS-0113-1.1
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
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MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
COMMAND TRUTH TABLE
COMMAND
MNEMONIC
CK
n-1
CK
n
/S
Deselect
No Operation
DESEL
NOP
H
H
X
X
H
L
X
H
Row Adress Entry &
Bank Activate
ACT
H
X
L
Single Bank Precharge
Precharge All Bank
PRE
PREA
H
H
X
X
Column Address Entry
& Write
WRITE
H
Column Address Entry
& Write with AutoPrecharge
WRITEA
Column Address Entry
& Read
/RAS /CAS
/WE
BA
A10
A0-9
X
H
X
H
X
X
X
X
X
X
L
H
H
V
V
V
L
L
L
L
H
H
L
L
V
V
L
H
X
X
X
L
LH
H
L
V
L
V
H
X
L
H
L
L
V
H
V
READ
H
X
L
H
L
H
V
L
V
Column Address Entry
& Read with Auto
Precharge
READA
H
X
L
H
L
H
V
H
V
Auto-Refresh
Self-Refresh Entry
Self-Refresh Exit
REFA
REFS
REFSX
Burst Terminate
Mode Register Set
TERM
MRS
H
H
L
L
H
H
H
L
H
H
X
X
L
L
H
L
L
L
HL
L
LX
H
H
L
L
L
X
H
H
L
H
H
X
H
L
L
X
X
X
X
X
L
X
X
X
X
X
L
X
X
X
X
X
V*1
H =High Level, L = Low Level, V = Valid, X = Don't Care, n = CK cycle number
NOTE:
1.A7-9 = 0, A0-6 = Mode Address
MIT-DS-0113-1.1
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
FUNCTION TRUTH TABLE
/S
IDLE
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
BA
TBST
ILLEGAL*2
L
H
L
X
BA,CA,A10
L
L
H
H
BA,RA
ACT
L
L
H
L
L
L
L
H
BA,A10
X
PRE/PREA
REFA
ROW ACTIVE
READ
/RAS /CAS
/WE
Address
Command
Current State
Op-Code,
Action
READ/WRITE ILLEGAL*2
NOP*4
Auto-Refresh*5
L
L
L
L
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
BA
TBST
NOP
L
H
L
H
BA,CA,A10
L
H
L
L
BA,CA,A10
L
L
H
H
BA,RA
ACT
Bank Active/ILLEGAL*2
L
L
H
L
BA,A10
PRE/PREA
Precharge/Precharge All
L
L
L
H
X
Mode-Add
Op-Code,
L
L
L
L
H
X
X
X
X
L
H
H
H
L
H
H
L
Mode-Add
MRS
Bank Active,Latch RA
READ/READA
Mode Register Set*5
Begin Read,Latch CA,
Determine Auto-Precharge
WRITE/
Begin Write,Latch CA,
WRITEA
Determine Auto-Precharge
REFA
ILLEGAL
MRS
ILLEGAL
DESEL
NOP(Continue Burst to END)
X
NOP
NOP(Continue Burst to END)
BA
TBST
Terminate Burst
Terminate Burst,Latch CA,
L
H
L
H
BA,CA,A10
READ/READA Begin New Read,Determine
Auto-Precharge*3
Terminate Burst,Latch CA,
L
H
L
L
BA,CA,A10
WRITE/WRITEA Begin Write,Determine AutoPrecharge*3
MIT-DS-0113-1.1
L
L
H
H
BA,RA
ACT
L
L
H
L
BA,A10
PRE/PREA
L
L
L
H
X
L
L
L
L
Op-Code,
Mode-Add
Bank Active/ILLEGAL*2
Terminate Burst,Precharge
REFA
ILLEGAL
MRS
ILLEGAL
MITSUBISHI
ELECTRIC
( 9 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
FUNCTION TRUTH TABLE(continued)
Current State
WRITE
READ with
AUTO
PRECHARGE
WRITE with
AUTO
PRECHARGE
MIT-DS-0113-1.1
/S
H
/RAS /CAS
X
X
/WE
Address
X
X
L
L
H
H
H
H
H
L
X
BA
L
H
L
H
BA,CA,A10
Command
DESEL
Action
NOP(Continue Burst to END)
NOP
TBST
NOP(Continue Burst to END)
Terminate Burst
Terminate Burst,Latch CA,
READ/READA Begin Read,Determine Auto-
WRITE/
L
H
L
L
BA,CA,A10
L
L
H
H
BA,RA
ACT
L
L
L
L
H
L
L
H
BA,A10
X
PRE/PREA
REFA
L
L
L
L
H
L
L
L
X
H
H
H
X
H
H
L
X
H
L
H
Op-Code,
Mode-Add
X
X
BA
BA,CA,A10
L
H
L
L
BA,CA,A10
L
L
H
H
BA,RA
WRITEA
ACT
L
L
H
L
BA,A10
PRE/PREA
L
L
L
H
L
L
L
L
H
L
L
L
X
H
H
H
X
H
H
L
X
H
L
H
X
Op-Code,
Mode-Add
X
X
L
H
L
L
BA,CA,A10
L
L
L
L
L
L
H
H
L
H
L
H
BA,RA
L
L
L
L
BA
BA,CA,A10
BA,A10
X
Op-Code,
Mode-Add
WRITEA
MRS
DESEL
NOP
TBST
READ/READA
WRITE/
Precharge*3
Terminate Burst,Latch CA,
Begin Write,Determine AutoPrecharge*3
Bank Active/ILLEGAL*2
Terminate Burst,Precharge
ILLEGAL
ILLEGAL
NOP(Continue Burst to END)
NOP(Continue Burst to END)
ILLEGAL
ILLEGAL
ILLEGAL
Bank Active/ILLEGAL*2
ILLEGAL*2
REFA
ILLEGAL
MRS
ILLEGAL
DESEL
NOP
TBST
READ/READA
WRITE/
WRITEA
ACT
PRE/PREA
REFA
MRS
MITSUBISHI
ELECTRIC
( 10 / 47 )
NOP(Continue Burst to END)
NOP(Continue Burst to END)
ILLEGAL
ILLEGAL
ILLEGAL
Bank Active/ILLEGAL*2
ILLEGAL*2
ILLEGAL
ILLEGAL
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
FUNCTION TRUTH TABLE(continued)
/S
PRE -
H
X
X
X
X
DESEL
NOP(Idle after tRP)
CHARGING
L
H
H
H
X
NOP
NOP(Idle after tRP)
L
H
H
L
BA
TBST
ILLEGAL*2
L
H
L
X
BA,CA,A10
L
L
H
H
BA,RA
ACT
L
L
H
L
BA,A10
PRE/PREA
L
L
L
H
X
L
L
L
L
ROW
H
X
X
X
X
DESEL
NOP(Row Active after tRCD
ACTIVATING
L
H
H
H
X
NOP
NOP(Row Active after tRCD
L
H
H
L
BA
TBST
ILLEGAL*2
L
H
L
X
BA,CA,A10
L
L
H
H
BA,RA
ACT
ILLEGAL*2
L
L
H
L
BA,A10
PRE/PREA
ILLEGAL*2
L
L
L
H
X
L
L
L
L
WRITE RE-
H
X
X
X
X
DESEL
NOP
COVERING
L
H
H
H
X
NOP
NOP
L
H
H
L
BA
TBST
ILLEGAL*2
L
H
L
X
BA,CA,A10
L
L
H
H
BA,RA
ACT
ILLEGAL*2
L
L
H
L
BA,A10
PRE/PREA
ILLEGAL*2
L
L
L
H
X
L
L
L
L
MIT-DS-0113-1.1
/RAS /CAS
/WE
Address
Command
Current State
Action
READ/WRITE ILLEGAL*2
ILLEGAL*2
NOP*4(Idle after tRP)
REFA
ILLEGAL
MRS
ILLEGAL
Op-Code,
Mode-Add
READ/WRITE ILLEGAL*2
REFA
ILLEGAL
MRS
ILLEGAL
Op-Code,
Mode-Add
READ/WRITE ILLEGAL*2
REFA
ILLEGAL
MRS
ILLEGAL
Op-Code,
Mode-Add
MITSUBISHI
ELECTRIC
( 11 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
FUNCTION TRUTH TABLE(continued)
Current State
/S
/RAS /CAS
/WE
Address
RE-
H
X
X
X
X
DESEL
NOP(Idle after tRC)
FRESHING
L
H
H
H
X
NOP
NOP(Idle after tRC)
L
H
H
L
BA
TBST
ILLEGAL
L
H
L
X
BA,CA,A10
L
L
H
H
BA,RA
ACT
ILLEGAL
L
L
H
L
BA,A10
PRE/PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
MRS
ILLEGAL
MODE
H
X
X
X
X
DESEL
NOP(Idle after tRSC)
REGISTER
L
H
H
H
X
NOP
NOP(Idle after tRSC)
SETTING
L
H
H
L
BA
TBST
ILLEGAL
L
H
L
X
BA,CA,A10
L
L
H
H
BA,RA
ACT
ILLEGAL
L
L
H
L
BA,A10
PRE/PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
MRS
ILLEGAL
Op-Code,
Mode-Add
Op-Code,
Mode-Add
Command
Action
READ/WRITE ILLEGAL
READ/WRITE ILLEGAL
ABBREVIATIONS:
H = Hige Level, L = Low Level, X = Don't Care
BA = Bank Address, RA = Row Address, CA = Column Address, NOP = No Operation
NOTES:
1. All entries assume that CKE was High during the preceding clock cycle and the current
clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA,
depending on the state of that bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state.May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
ILLEGAL = Device operation and / or date-integrity are not guaranteed.
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 12 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
FUNCTION TRUTH TABLE FOR CKE
Current State
CK
n-1
CK
n
/S
SELF -
H
X
X
X
REFRESH*1
L
H
H
L
H
L
/RAS /CAS
Action
/WE
Add
X
X
X
INVALID
X
X
X
X
Exit Self-Refresh(Idle after tRC)
L
H
H
H
X
Exit Self-Refresh(Idle after tRC)
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP(Maintain Self-Refresh)
POWER
H
X
X
X
X
X
X
INVALID
DOWN
L
H
X
X
X
X
X
Exit Power Down to Idle
L
L
X
X
X
X
X
NOP(Maintain Self-Refresh)
ALL BANKS
H
H
X
X
X
X
X
Refer to Function Truth Table
IDLE*2
H
L
L
L
L
H
X
Enter Self-Refresh
H
L
H
X
X
X
X
Enter Power Down
H
L
L
H
H
H
X
Enter Power Down
H
L
L
H
H
L
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
X
X
X
ILLEGAL
L
X
X
X
X
X
X
Refer to Current State = Power Down
ANY STATE
H
H
X
X
X
X
X
Refer to Function Truth Table
other than
H
L
X
X
X
X
X
Begin CK0 Suspend at Next Cycle*3
listed above
L
H
X
X
X
X
X
Exit CK0 Suspend at Next Cycle*3
L
L
X
X
X
X
X
Maintain CK0 Suspend
ABBREVIATIONS:
H = High Level, L = Low Level, X = Don't Care
NOTES:
1. CKE Low to High transition will re-enable CK and other inputs asynchronously.
A minimum setup time must be satisfied before any command other than EXIT.
2. Power-Down and Self-Refresh can be entered only form the All banks idle State.
3. Must be legal command.
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 13 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
SIMPLIFIED STATE DIAGRAM
SELF
REFRESH
REFS
REFSX
MRS
MODE
REGISTER
SET
REFA
AUTO
REFRESH
IDLE
CKEL
CKEH
CLK
SUSPEND
ACT
POWER
DOWN
CKEL
CKEH
ROW
ACTIVE
WRITE
READA
WRITEA
CKEL
WRITE
SUSPEND
READ
READ
WRITE
WRITE
CKEL
READ
CKEH
CKEH
WRITEA
READA
WRITEA
READA
CKEL
WRITEA
SUSPEND
POWER
APPLIED
READ
SUSPEND
CKEL
PRE
WRITEA
CKEH
POWER
ON
PRE
PRE
READA
PRE
CKEH
READA
SUSPEND
PRE
CHARGE
Automatic Sequence
Command Sequence
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 14 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a
SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQMB0-7 high and NOP
condition at the inputs.
2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 500É s.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode
register(MRS). The mode register stores these date until the next MRS command, which may
be issue when both banks are in idle state. After tRSC from a MRS command, the SDRAM is
ready for new command.
CK
/S
BA A10
A9
A8
A7
0
0
0
A6
A5
A4
A3
A2
A1
A0
/RAS
/CAS
0
0
LTMODE
BT
BL
/WE
BA, A10 -A0
LATENCY
MODE
CL
000
001
010
011
100
101
110
111
/CAS LATENCY
R
1
2
3
4
R
R
R
BURST
LENGTH
BURST
TYPE
BL
000
001
010
011
100
101
110
111
0
1
V
BT= 0
1
2
4
8
R
R
R
R
BT= 1
1
2
4
8
R
R
R
R
SEQUENTIAL
INTERLEAVED
R:Reserved for Future Use
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 15 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
CK
Command
Read
Write
Y
Y
Address
Q0
DQ
CL= 3
BL= 4
/CAS Latency
Q1
Q2
Q3
D0
Burst Length
D1
D2
D3
Burst Length
Burst Type
Initial Address BL
Column Addressing
A2
A1
A0
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
Sequential
Interleaved
8
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
-
0
0
0
1
2
3
0
1
2
3
-
0
1
1
2
3
0
1
0
3
2
4
-
1
0
2
3
0
1
2
3
0
1
-
1
1
3
0
1
2
3
2
1
0
-
-
0
0
1
0
1
1
0
1
0
2
-
-
1
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 16 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
OPERATION DESCRIPTION
BANK ACTIVATE
The SDRAM has two independent banks. Each bank is activated by the ACT command with
the bank address(BA). A row is indicated by the row address A10-0. The minimum activation
interval between one bank and the other bank is tRRD.
PRECHARGE
The PRE command deactivates indicated by BA. When both banks are active, the precharge
all command(PREA,PRE + A10=H) is available to deactivate them at the same time. After tRP
from the precharge, an ACT command can be issued.
Bank Activation and Precharge All (BL=4, CL=3)
CK
Command
ACT
ACT READ
tRRD
A0-9
Xa
PRE
ACT
tRAS
Xb
Y
tRP
Xb
tRCD
A10
Xa
Xb
0
BA
0
1
0
DQ
1
Xb
1
Qa0
Qa1
Qa2
Qa3
Precharge all
READ
After tRCD from the bank activation, a READ command can be issued. 1st output date is
available after the /CAS Latency from the READ, followed by (BL-1) consecutive date when
the Burst Length is BL. The start address is specified by A8-0, and the address sequence of
burst data is defined by the Burst Type. A READ command may be applied to any active bank,
so the row precharge time(tRP) can be hidden behind continuous output data(in case of BL=8)
by interleaving the dual banks. When A10 is high at a READ command, the
auto-precharge(READA) is performed. Any command (READ, WRITE, PRE, ACT) to the
same bank is inhibited till the internal precharge is complete. The internal precharge start
timing depends on /CAD Latency. The next ACT command can be issued after tRP from the
internal precharge timing.
MIT-DS-0113-1.1
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ELECTRIC
( 17 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
Dual Bank Interleaving READ (BL=4, CL=3)
CK
Command
ACT
A0-9
Xa
Y
Xb
Y
A10
Xa
0
Xb
0
0
BA
0
0
1
1
0
Qa1
Qa2
READ ACT
READ PRE
tRCD
DQ
Qa0
/CAS latency
Qa3
Qb0
Qb1
Qb2
Burst Length
READ with Auto-Precharge (BL=4, CL=3)
CK
Command
ACT
A0-9
Xa
Y
Xa
A10
Xa
1
Xa
BA
0
0
0
READ
ACT
tRCD
tRP
DQ
Qa0
Qa1
Qa2
Qa3
Internal precharge begins
READ Auto-Precharge Timing (BL=4)
CK
Command
CL=4
DQ
CL=3
DQ
CL=2
DQ
ACT
READ
Qa0
Qa0
Qa1
Qa2
Qa0
Qa1
Qa2
Qa3
Qa1
Qa2
Qa3
Qa3
Internal Precharge Start Timing
MIT-DS-0113-1.1
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ELECTRIC
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
WRITE
After tRCD from the bank activation, a WRITE command can be issued. 1st input data is set
at the same cycle as the WRITE. Following(BL-1) data are written into the RAM, when the
Burst Length is BL. The start address is specified by A8-0, and the address sequence of burst
data is defined by the Burst Type. A WRITE command may be applied to any active bank, so
the row precharge time(tRP) can be hidden behind continuous input data (in case of BL=8) by
interleaving the dual banks. From the last input data to the PRE command, the write recovery
time (tWR) is required. When A10 is high at a WRITE command, the auto-precharge(WRITEA)
is performed. Any command(READ, WRITE, PRE, ACT) to the same bank is inhibited till the
internal precharge is complete. The internal precharge begins at tWR after the last input data
cycle. The next ACT command can be issued after tRP from the internal precharge timing.
Dual Bank Interleaving WRITE (BL=4)
CK
Command
ACT
A0-9
Xa
Write
ACT
tRCD
Write
PRE
tRCD
Y
Y
Xb
tWR
A10
Xa
0
Xb
0
0
BA
0
0
1
1
0
Da0
Da1
Db0
Db1
DQ
Da2
Da3
Db2
Db3
Burst Length
WRITE with Auto-Precharge (BL=4)
CK
Command
ACT
A0-9
Xa
Y
Xa
A10
Xa
1
Xa
BA
0
0
Write
ACT
tRCD
tRP
0
tWR
DQ
Da0
Da1
Da2
Da3
Internal precharge begins
MIT-DS-0113-1.1
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ELECTRIC
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
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MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
BURST INTERRUPTION
[ Read Interrupted by Read ]
Burst read option can be interrupted by new read of the same or the other bank. MH4S64CTJ
allows random column access. READ to READ interval is minimum 1 CK
Read Interrupted by Read (BL=4, CL=3)
CK
Command
READ READ
READ
READ
A0-9
Yi
Yj
Yk
Yl
A10
0
0
0
0
BA
0
0
1
0
DQ
Qai0
Qaj0
Qaj1 Qbk0 Qbk1 Qbk2
Qal0 Qal1
Qal2
Qal3
[ Read Interrupted by Write ]
Burst read operation can be interrupted by write of the same or the other bank. Random
column access is allowed. In this case, the DQ should be controlled adequately by using the
DQMB0-7 to prevent the bus contention. The output is disabled automatically 2 cycle after
WRITE assertion.
Read Interrupted by Write (BL=4, CL=3)
CK
Command
READ
Write
A0-9
Yi
Yj
A10
0
0
BA
0
0
DQMB0-7
Q
D
Qai0
Daj0
Daj1
Daj2
DQM control
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 20 / 47 )
Daj3
Write control
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
[ Read Interrupted by Precharge ]
Burst read operation can be interrupted by precharge of the same or the other bank. Read
to PRE interval is minimum 1 CK. A PRE command disables the data output, depending on
the /CAS Latency. The figure below shows examples, when the dataout is terminated.
Read Interrupted by Precharge (BL=4)
CK
Command
READ
PRE
DQ
Q0
Q1
Q0
Q1
Q2
Q3
CL=4
Command
READ
PRE
DQ
Command
READ
PRE
DQ
Q0
Q1
Q0
Q1
Q2
Q3
CL=3
Command
READ
PRE
DQ
Command
PRE
READ
DQ
Q0
Q1
Q2
Q3
CL=2
Command
READ
PRE
DQ
Comman
d
Q0
REA
D
DQ
CL=
1
Comman
d
DQ
MIT-DS-0113-1.1
Q1
PRE
Q
0
REA
D
Q
1
Q
2
Q
3
PR
E
Q
0
Q
1
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ELECTRIC
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
[ Read Interrupted by Burst Terminate ]
Similarly to the precharge, burst terminate command can interrupt burst read operation and
disable the data output. READ to TERM interval is minimum 1 CK. The figure below shows
examples, when the dataout is terminated.
Read Interrupted by Burst Terminate (BL=4)
CK
Command
READ
TERM
DQ
Command
Q0
READ
Q1
Q2
Q1
Q2
Q3
TERM
CL=3
DQ
Command
Q0
READ TERM
DQ
Command
Q0
TERM
READ
DQ
Command
Q0
READ
Q1
Q2
Q3
TERM
CL=2
DQ
Command
Q0
Q0
REA
D
DQ
CL=
1
Comman
d
DQ
MIT-DS-0113-1.1
Q2
READ TERM
DQ
Comman
d
Q1
TERM
Q
0
REA
D
Q
1
Q
2
Q
3
TERM
Q
0
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
[ Write Interrupted by Write ]
Burst write operation can be interrupted by new write of the same or the other bank.
Random column access is allowed. WRITE to WRITE interval is minimum 1 CK.
Write Interrupted by Write (BL=4)
CK
Command
Write Write
Write
Write
A0-9
Yi
Yj
Yk
Yl
A10
0
0
0
0
BA
0
0
1
0
DQ
Dai0
Daj0
Daj1
Dbk0 Dbk1 Dbk2 Dal0
Dal1
Dal2
Dal3
[ Write Interrupted by Read ]
Burst write operation can be interrupted by read of the same or the other bank.
Random column access is allowed. WRITE to READ interval is minimum 1 CK. The
input data on DQ at the interrupting READ cycle is "don't care".
Write Interrupted by Read (BL=4, CL=3)
CK
Command
Write READ
Write
READ
A0-9
Yi
Yj
Yk
Yl
A10
0
0
0
0
BA
0
0
0
1
DQMB0-7
DQ
MIT-DS-0113-1.1
Dai0
Qaj0
Qaj1
MITSUBISHI
ELECTRIC
( 23 / 47 )
Dak0 Dak1
Qbl0
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of the same bank. Random
column access is allowed. Because the write recovery time(tWR) is required between
the last input data and the next PRE, 3rd data should be masked with DQMB0-7
shown as below.
Write Interrupted by Precharge (BL=4)
CK
Command
Write
PRE
tWR
ACT
tRP
A0-9
Yi
A10
0
0
Xb
BA
0
0
0
Xb
DQMB0-7
DQ
Dai0
Dai1
This data should be masked to satisfy tWR requirement.
[ Write Interrupted by Burst Terminate ]
Burst terminate command can terminate burst write operation. In this case, the write
recovery time is not required and the bank remains active. The figure below shows
the case 3 words of data are written. Random column access is allowed. WRITE to
TERM interval is minimum 1 CK.
Write Interrupted by Burst Terminate (BL=4)
CK
Command
Write
A0-9
Yi
A10
0
BA
0
TERM
DQMB0-7
DQ
MIT-DS-0113-1.1
Dai0
Dai1
Dai2
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ELECTRIC
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
AUTO REFRESH
Single cycle of auto-refresh is initiated with a REFA(/CS=/RAS=/CAS=L,
/WE=/CKE=H) command. The refresh address is generated internally. 4096 REFA
cycle within 64ms refresh 16Mbit memory cells. The auto-refresh is performed on
each bank alternately(ping-pong refresh). Before performing an auto-refresh, both
banks must be in the idle state. Additional commands must not be supplied to the
device before tRC from the REFA command.
Auto-Refresh
CK
/S
NOP or DESLECT
/RAS
/CAS
/WE
CKE
minimum tRC
A0-10
BA
Auto Refresh on Bank 0
MIT-DS-0113-1.1
Auto Refresh on Bank 1
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ELECTRIC
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
SELF REFRESH
Self-refresh mode is entered by issuing a REFS command (/CS=/RAS=/CAS=L,
/WE=H, CKE=L). Once the self-refresh is initiated, it is maintained as log as CKE is
kept low.During the self-refresh mode, CKE is asynchronous and the only enabled
input (but asynchronous), all other inputs including CK0 are disabled and ignored, and
power consumption due to synchronous inputs is saved. To exit the self-refresh,
supplying stable CK0 inputs, asserting DESEL or NOP command and then asserting
CKE(REFSX). After tRC from REFSX both banks are in the idle state and a new
command can be issued after tRC, but DESEL or NOP commands must be asserted
till then.
Self-Refresh
CK
Stable CK
/S
NOP
/RAS
/CAS
/WE
CKE
new command
A0-10
X
BA
0
Self Refresh Entry
MIT-DS-0113-1.1
Self Refresh Exit
MITSUBISHI
ELECTRIC
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minimum tRC
for recovery
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
CLK SUSPEND
CKE controls the internal CLK at the following cycle. Figure below shows how CKE
works. By negating CKE, the next internal CLK is suspended. The purpose of CLK
suspend is power down, output suspend or input suspend. CKE is a synchronous
input except during the self-refresh mode. CLK suspend can be performed either
when the banks are active or idle, but a command at the following cycle is ignored.
CK
(ext.CLK)
CKE
int.CLK
Power Down by CKE
CK
Standby Power Down
CKE
Command
PRE
NOP NOP NOP NOP NOP NOP NOP
Active Power Down
CKE
Command
NOP NOP NOP NOP NOP NOP NOP
ACT
DQ Suspend by CKE
CK
CKE
Command
DQ
MIT-DS-0113-1.1
Write
D0
READ
D1
D2
D3
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ELECTRIC
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Q0
Q1
Q2
Q3
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
DQM CONTROL
DQMB0-7 is a dual function signal defined as the data mask for writes and the output
disable for reads. During writes, DQMB0-7 masks input data word by word. DQMB0-7
to write mask latency is 0.
During reads, DQMB0-7 forces output to Hi-Z word by word. DQMB0-7 to output Hi-Z
latency is 2.
DQM Function
CK
Command
READ
Write
DQMB0-7
DQ
D0
D2
D3
Q0
masked by DQM=H
MIT-DS-0113-1.1
Q1
Q3
disabled by DQM=H
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Condition
Ratings
Unit
Vdd
Supply Voltage
with respect to Vss
-0.5 ~ 4.6
V
VI
Input Voltage
with respect to Vss
-0.5 ~ 4.6
V
VO
Output Voltage
with respect to Vss
-0.5 ~ 4.6
V
IO
Output Current
50
mA
Pd
Power Dissipation
16
W
Topr
Operating Temperature
0 ~ 70
°C
Tstg
Storage Temperature
-40 ~ 100
°C
Ta=25°C
RECOMMENDED OPERATING CONDITION
(Ta=0 ~ 70°C, unless otherwise noted)
Limits
Parameter
Symbol
Min.
Typ.
Max.
Unit
Vdd
Supply Voltage
3.0
3.3
3.6
V
Vss
Supply Voltage
0
0
0
V
VIH
High-Level Input Voltage all inputs
Low-Level Input Voltage all inputs
2.0
Vdd+0.3
V
-0.3
0.8
V
VIL
CAPACITANCE
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol
Parameter
Test Condition
Limits(max.)
Unit
CI(A)
Input Capacitance, address pin
VI = Vss
100
pF
CI(C)
Input Capacitance, control pin
100
pF
CI(K)
Input Capacitance, CK pin
45
pF
CI/O
Input Capacitance, I/O pin
19
pF
MIT-DS-0113-1.1
f=1MHz
Vi=25mVrms
MITSUBISHI
ELECTRIC
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol
Test Condition
Parameter
bank
Icc1s* operating current, single(discrete)
operating
current,
dual
bank
Icc1d*
(discrete)
Icc2h standby current, CKE=H
Icc2l
standby current, CKE=L
Icc3
active standby current
Icc4* burst current
Icc5
auto-refresh current
Icc6
self-refresh current
Limits(max)
-10(B) -12(B) -15(B)
tRC=min.tCLK=min, BL=1, CL=3
tRC=min.tCLK=min, BL=1, CL=3
both banks idle, tCLK=min, CKE=H
both banks idle, tCLK=min, CKE=L
800
1120
320
32
both banks active, tCLK=min, CKE=H
480
tCLK=min, BL=4, CL=3, both banks active(discerte) 760
tRC=min, tCLK=min
1040
CKE <0.2V
16
704
944
288
32
424
664
960
16
568
768
256
32
368
568
800
16
Unit
mA
mA
mA
mA
mA
mA
mA
mA
*One bank of module is operating,the other bank of module is standby,CKE=H.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol
VOH(DC)
VOL(DC)
VOH(AC
IOZ
)VOL(AC)
Ii
IOZ
Ii
MIT-DS-0113-1.1
Parameter
Limits
Min. Max.
IOH=-2mA
2.4
IOL=2mA
0.4
CL=50pF,
Q
floating VO=0 ~ Vdd
-20
2
20
IOH=-2mA
-160 160
CL=50pF,
VIH=0
~ Vdd+0.3V
IOL=2mA
0.8
1
Q floating VO=0 Å` Vdd -1
0
0
VIH=0 Å` Vdd+0.3V
-8
8
0
0
Test Condition
High-Level Output Voltage(DC)
Low-Level Output Voltage(DC)
High-Level
Off-stare
Output
Output
Current
Voltage(AC)
Input
Current
Low-Level
Output Voltage(AC)
Off-stare Output Current
Input
Current
MITSUBISHI
ELECTRIC
( 30 / 47 )
Unit
V
V
uA
V
uA
V
ÉA
É
A
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
AC TIMING REQUIREMENTS (SDRAM Component)
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Input Pulse Levels:
0.8V to 2.0V
Input Timing Measurement Level: 1.4V
Symbol Parameter
CL=1
CL=2
CL=3
tCLK
CK cycle time
tCH
tCL
tT
tIS
tIH
tRC
tRCD
tRAS
tRP
tWR
tRRD
tRSC
tPDE
tREF
CK High pulse width
CK Low pilse width
Transition time of CK
Input Setup time(all inputs)
Input Hold time(all inputs)
Row cycle time
Row to Column Delay
Row Active time
Row Precharge time
Write Recovery time
Act to Act Deley time
Mode Register Set Cycle time
Power Down Exit time
Refresh Interval time
CK
Limits
Unit
-10,-10B
-12,-12B
-15,-15B
Min. Max. Min. Max. Min. Max.
ns
30
30
30
ns
15
15
20
ns
12
15
10
4
4
4
ns
4
4
4
ns
1
10
1
10
1
10 ns
3
3
3
ns
1
1
1.5
ns
90
100
120
ns
30
30
30
ns
60 10000
70 10000
80 10000 ns
30
30
40
ns
12
12
15
ns
20
24
30
ns
20
24
30
ns
10
12
15
ns
65.6
65.6
65.6 ms
1.4V
Any AC timing is
referenced to the input
Signal
1.4V
signal crossing through
1.4V.
MIT-DS-0113-1.1
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ELECTRIC
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
SWITCHING CHARACTERISTICS (SDRAM Component)
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol Parameter
tAC
tOH
tOLZ
tOHZ
Access time from CK
-10,-10B
Min. Max.
27
9
8
CL=1
CL=2
CL=3
Output Hold time
from CK
Delay time, output low
impedance from CK
Delay time, output high
impedance from CK
Output Load
Condition
-15,-15B
Unit
Min. Max.
30
ns
12
ns
ns
9
3
3
3
ns
0
0
0
ns
3
VTT=1.4V
Limits
-12,-12B
Min. Max.
27
9.5
8
8
3
8
CK
3
10
ns
1.4V
50Ω
DQ
1.4V
VOUT
50pF
Output Timing
Measurement
Reference Point
CK
1.4V
DQ
1.4V
tAC
MIT-DS-0113-1.1
tOH
tOHZ
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
WRITE CYCLE (single bank)
BL=4
CK
tRC
/S
tRAS
tRP
/RAS
tRCD
/CAS
/WE
CKE
DQMB
0-7
A0-9
X
A10
X
Y
X
X
BA
tWR
DQ
MIT-DS-0113-1.1
D
D
D
D
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
BL=4
WRITE CYCLE (dual bank)
CK
tRC
/S
tRAS
tRP
tRAS
tRRD
/RAS
tRCD
tRCD
/CAS
/WE
CKE
DQMB
0-7
A0-9
Xa
A10
Xa
Y
Xb
Y
Xb
BA
tWR
tWR
DQ
MIT-DS-0113-1.1
Da
Da
Da
Da
Db
Db
MITSUBISHI
ELECTRIC
( 34 / 47 )
Db
Db
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
READ CYCLE (single bank)
BL=4, CL=3
CK
tRC
/S
tRAS
tRP
/RAS
tRCD
/CAS
/WE
CKE
DQMB
0-7
A0-9
X
A10
X
Y
X
X
BA
DQ
tCAC
Q
Q
Q
Q
tRAC
MIT-DS-0113-1.1
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
READ CYCLE (dual bank)
BL=4, CL=3
CK
tRC
/S
tRAS
tRP
tRRD
tRAS
/RAS
tRCD
tRCD
/CAS
/WE
CKE
DQMB
0-7
A0-9
Xa
A10
Xa
Y
Xb
Y
Xa
Xb
Xa
BA
Qa
DQ
tRAC
MIT-DS-0113-1.1
Qa
Qa
tCAC
Qa
Qb
Qb
Qb
Qb
tCAC
tRAC
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
BL=4, CL=3
WRITE to READ (single bank)
CK
/S
tRAS
/RAS
tRCD
/CAS
/WE
CKE
DQMB
0-7
A0-9
X
A10
X
Y
Y
BA
DQ
D
D
D
D
Q
Q
Q
Q
tCAC
MIT-DS-0113-1.1
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
WRITE to READ (dual bank)
BL=4, CL=3
CK
tRC
/S
tRAS
tRP
tRRD
tRAS
/RAS
tRCD
tRCD
/CAS
/WE
CKE
DQMB
0-7
A0-9
Xa
A10
Xa
Y
Y
Xb
Xa
Xa
Xb
BA
tWR
DQ
Da
Da
Da
Qb
Da
Qb
Qb
Qb
tCAC
MIT-DS-0113-1.1
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
BL=4, CL=3
READ to WRITE (single bank)
CK
/S
tRAS
/RAS
tRCD
/CAS
/WE
CKE
for output diable
DQMB
0-7
A0-9
X
A10
X
Y
Y
BA
tWR
Q
DQ
Q
D
D
D
D
tCAC
tRAC
MIT-DS-0113-1.1
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ELECTRIC
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
BL=4, CL=3
READ to WRITE (dual bank)
CK
tRC
/S
tRAS
tRP
tRAS
tRRD
/RAS
tRCD
tRCD
/CAS
/WE
CKE
for output disable
DQMB
0-7
A0-9
Xa
A1
0
Xa
Y
Y
Xb
Xa
Xb
Xa
BA
tWR
Qa
DQ
Qa
Db
Db
Db
Db
tCAC
tRAC
MIT-DS-0113-1.1
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
WRITE with AUTO-PRECHARGE
BL=4
CK
tRC
/S
tWR + tRP
/RAS
tRCD
/CAS
/WE
CKE
DQMB
0-7
A0-9
X
A10
X
Y
X
X
BA
DQ
D
D
D
D
internal precharge starts
this timing depends on
BL
MIT-DS-0113-1.1
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ELECTRIC
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25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
READ with AUTO-PRECHARGE
BL=4, CL=3
CK
tRC
/S
tRP
/RAS
tRCD
/CAS
/WE
CKE
DQMB
0-7
A0-9
X
A10
X
Y
X
X
BA
Q
DQ
Q
Q
Q
tCAC
tRAC
internal precharge starts @CL=3, BL=4
this timing depends on CL and BL
MIT-DS-0113-1.1
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
AUTO-REFRESH
CK
tRC
/S
tRP
/RAS
/CAS
/WE
CKE
DQMB
0-7
A0-9
A10
BA
DQ
if any bank is active, it must be precharged
MIT-DS-0113-1.1
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Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
SELF-REFRESH ENTRY
CK
/S
tRP
/RAS
/CAS
/WE
CKE
DQMB
0-7
A0-9
A10
BA
DQ
if any bank is active, it must be precharged
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 44 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
SELF-REFRESH EXIT
CK
/S
NOP or DESEL
/RAS
/CAS
/WE
tRC
CKE
DQMB
0-7
A0-9
X
A10
X
BA
DQ
internal CLK re-start
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 45 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
MODE REGISTER SET
BL=4, CL=3
CK
/S
tRSC
tRP
tRCD
/RAS
/CAS
/WE
CKE
DQMB
0-7
A0-9
A10
mode
X
Y
X
BA
Q
DQ
Q
Q
tCAC
tRAC
if any bank is active, it must be precharged
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 46 / 47 )
25.Mar..1997
Preliminary Spec.
MITSUBISHI LSIs
Some contents are subject to change without notice.
MH4S64CBMD-10,-12,-15,-10B,-12B,-15B
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
2-ø3±0.1
8.89±0.13
1
3±0.13
2±0.13
3±0.13
1±0.13
85
6.35±0.13
24.495±0.13
9x1.27=11.43±0.2
29x1.27=36.83±0.2
42.18±0.13
133.35±0.13
127.35±0.13
6.35±0.1
43x1.27=54.61±0.2
1.27±0.1
168
84
2-R2±0.13
17.78±0.13
1±0.13
1.27±0.1
3.9MAX
OUTLINE
17.78±0.13
29.21±0.13
MIT-DS-0113-1.1
MITSUBISHI
ELECTRIC
( 47 / 47 )
25.Mar..1997
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