ON BAS21TMR6T1G High voltage switching diode Datasheet

BAS21TMR6
High Voltage Switching
Diode
The BAS21TMR6T1G device houses three high−voltage switching
diodes in a SC−74 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
Features
• Reduces Board Space
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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250 V
HIGH VOLTAGE
SWITCHING DIODE
6
5
4
1
2
3
MAXIMUM RATINGS (EACH DIODE)
Symbol
Value
Unit
Reverse Voltage
VR
250
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
625
mAdc
Rating
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR− 5 Board (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
4
6 5
1 2
Symbol
Max
Unit
311
2.5
mW
mW/°C
402
°C/W
347
2.8
mW
mW/°C
RJA
360
°C/W
TJ, Tstg
−55 to
+150
°C
PD
RJA
SC−74
CASE 318F
3
MARKING DIAGRAM
RAA MG
G
PD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 10 mm2, 2 oz copper traces
2. FR−4 @ 25 mm2, 2 oz copper traces
RAA
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BAS21TMR6T1G
SC−74
(Pb−Free)
3000 /
Tape & Reel
NSVBAS21TMR6T1G
SC−74
(Pb−Free)
3000 /
Tape & Reel
NSVBAS21TMR6T2G
SC−74
(Pb−Free)
3000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 1
1
Publication Order Number:
BAS21TMR6/D
BAS21TMR6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Min
Max
Unit
Adc
IR
Reverse Breakdown Voltage (IBR = 100 Adc)
V(BR)
−
−
0.1
100
250
−
−
−
1.0
1.25
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
Vdc
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
trr
−
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
t
IF
trr
10%
t
0.1 F
90%
D.U.T.
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IR(REC) = 3.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAS21TMR6
TYPICAL CHARACTERISTICS
10 150°C
100
IR , REVERSE CURRENT (μA)
125°C
85°C
10
55°C
25°C
1.0
-55°C
125°C
1.0
85°C
0.1
55°C
0.01
25°C
-40°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, FORWARD VOLTAGE (V)
0.8
0.9
0.001
20
1.0
50
80
170
200
110
140
VR, REVERSE VOLTAGE (V)
Figure 2. VF vs. IF
Figure 3. IR vs. VR
1.6
Cap
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
150°C
1.4
1.2
1.0
0.8
0.6
0.4
0
1
2
3
4
5
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
6
7
8
230
260
BAS21TMR6
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D
6
5
4
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04.
E
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
q
b
e
C
A
0.05 (0.002)
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
−
10°
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
L
A1
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
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BAS21TMR6/D
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