J tSsmi-Conaucto'i ZPioaueti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 MPS-U05 (SILICON) MPS-U06 NPN SILICON AMPLIFIER TRANSISTORS NPN SILICON ANNULAR AMPLIFIER TRANSISTORS . . . designed for general-purpose, high-voltage amplifier and driver applications. BVcEO - 60 Vdc (Mini @> IQ - 1.0 mAdc - MPS-U06 80 Vdc(Min) @ lc = 1.0 mAdc - MPS-U06 • High Power Dissipation - PQ == 10 W @ TC = 25°C • Complements to PNP MPS-U&5 and MPS-U56 f HT •— A — F--^ Riling Collector-Emitter Voltage Collector-Baie Voltage Emitnr Ban Voltaos Symbol VQEQ V CB MPS-U06 MPS-U06 80 80 60 60 Unit Vdc Vdc VEB 4.0 Vdc Collector Currant - Continuout IG 2.0 Adc Tonl Coww Dinipation e T A • 25°C Derate above 25°C PQ 1.0 8.0 Watt mW/°C Total PovMr Diulpation ® Tc « 25°C Derate above 25°C PD '0 80 Watn mW/°C Tj,Tj,0 -65 to +150 °C Operating and Storage Junction Tamptrnura Range 3 Therrrnl Rninanca, Junction to Cue Thermal Retisunce, Junction to Ambiant Symlwl B9JC R 9JA<" Max Unit L 1 i f | L, STYLE 1 —\R - G „ PIN 1. EM •* — " 2. BA,E 3- CO LLECTQ R DIM A 12.5 °C/W R 125 °C/W C (1) R#JA >< measurad uvith tha device lolderad into a typical printed circuit board. 2 rc D— THERMAL CHARACTERISTICS Charaettriitic t Q vt-. "^4- MAXIMUM RATINGS R— — B-- u F G H J K L M A B MILLIMETERS MIN MAX 9.14 9.63 6.60 724 S.4I s.e? 0.53 0.38 3.33 3.19 2.S49SC 3.94 4.19 0.41 0.30 12.07 12.70 25.02 28.53 5.1 iiSC 2.69 2.39 1.14 1.40 INCHES MIN MAX 0.360 0.375 0.260 0.285 0.2 U 0.22; _OJUi 0.12S P.1J1 0.11 BSC 0.155 0.165 0.014 0.016 0.47S 0.60C 0.985 1.005 dS BSC 0.094 0.106 0.045 0.055 CASE 152-02 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished bv N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors entourages customers to verity that datasheets are current before placing orders. Ouniitv MPS-U05, MPS-U06 (continued) ELECTRICAL CHARACTERISTICS (TA = 26°C unless otherwise noted) Characteriitic TYP Symbol [ OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (l c - 1.0 mAdc, IB = 0> Emitter-Base Breakdown Voltage Collector Cutoff Current (VCB - 40 Vdc. IE - 0) IVCB - 60 Vdc. 1 E • 0) Vdc BVCEO 60 80 - - 4.0 - - - - 1OO 100 80 60 - - 125 100 55 - 0.18 0.1 0.4 - - 0.74 1.2 Vdc SO 170 - MHt - 6.0 12 pF MPS-U05 MPS-U06 BVEBO Vdc nAdc ICBO MPS-U05 MPS-U06 ON CHARACTERISTICS DC Current Gain ID (>C - SO mAdc. VCE = 1.0 Vdcl dC = 250 mAdc. VCE = 1-0 Vdc) (lc = 500 mAdc, V c g = 1.0 Vdc) - "FE Collector-Emitter Saturation Voltage! 1 t dC" 250 mAdc. IB = 10 mAdc) (1C - 250 mAdc. IB - 25 mAdc) VcElwt) Base-Emitter On Voltage (1) (1C - 25O mAdc, VCE " s-°vdcl vBE(on) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gam-Bandwidth Product ( 1 ) |IC « 200 mAdc, V CE - 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB - 10 Vdc, IE = 0, f - 10O kHz> *T Cob Mtpulse Test: Pulse Width ^300 M*. Duty Cycle £2.0%, FIGURE 2 - "ON" VOLTAGES FIGURE 1 -DC CURRENT GAIN .0 FIGURE 3 - DC SAFE OPERATING AREA 2.D SO 10 10 SO 100 1C. COLLECTOR CURRENT (mA) JM FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT X VCE ' 5 D Vac TV ?5 n C V C E r CCILLECTCIH £MITT£R VOLTAGE ( V O L T S ) Thr^ -J14, t.vu limitations on the power handling ability of a tran5'«*or: junction temperature and second breakdown. Safe operating area curves indicate 'c — V/£g limits of the trannstor that mutt be obMrvad for rcNabl* operation; i e., the transistor must not be subjected to greater dissipation than the curves indicate. 1C. CDUECTOB CUHBENT (mAI The data of Figure 3 is bawd on Tjipk] " 150°C; TC i* variable depending on conditions. At high CAM temperatures, thermal limitations will reduce the power that can be handled to value* lew than the limitations imposed by second breakdown.