IXYS IXTH24N50Q N-channel enhancement mode Datasheet

Advanced Technical Information
IXTH 24N50Q
IXTT 24N50Q
Power MOSFETs
Q-Class
VDSS
= 500 V
= 24 A
ID25
RDS(on) = 0.24 Ω
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
24
A
IDM
TC = 25°C, pulse width limited by TJM
96
A
IAR
TC = 25°C
24
A
EAR
TC = 25°C
30
mJ
1.5
J
10
V/ns
360
W
-55 to +150
°C
TJM
150
°C
Tstg
-55 to +150
°C
300
°C
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
Symbol
Test Conditions
1.13/10 Nm/lb.in.
6
4
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
g
g
0.20
4.5
V
±100
nA
25
1
µA
mA
0.24
Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
(TAB)
S
G = Gate
D
= Drain
S = Source TAB = Drain
Features
z
IXYS advanced low Qg process
z
Low gate charge and capacitances
- easier to drive
- faster switching
z
International standard packages
z
Low RDS (on)
z
Rated for unclamped Inductive load
switching (UIS) rated
z
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99067(07/03)
IXTH 24N50Q
IXTT 24N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
14
19
S
3000
pF
410
pF
Crss
110
pF
td(on)
16
ns
20
ns
46
ns
tf
11
ns
Qg(on)
82
nC
18
nC
36
nC
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG
Qgs
= 2.0 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.35
(TO-247)
Source-Drain Diode
0.25
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
24
A
ISM
Repetitive; pulse width limited by TJM
96
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
QRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
500
6.0
TO-247 AD (IXFH) Outline
1
Dim.
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
TO-268 Outline
ns
µC
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTH 24N50Q
IXTT 24N50Q
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
24
60
VGS = 10V
8V
7V
21
VGS = 10V
8V
54
48
18
7V
15
I D - Amperes
I D - Amperes
42
6V
12
9
6
5V
36
30
6V
24
18
12
3
5V
6
0
0
0
1
2
3
4
5
6
7
0
5
10
Fig. 3. Output Characteristics
@ 125 Deg. C
24
25
3.1
VGS = 10V
2.8
R D S (on) - Normalized
6V
18
I D - Amperes
20
Fig. 4. RDS(on) Norm alized to ID25 Value vs.
Junction Tem perature
VGS = 10V
7V
21
15
V D S - Volts
V D S - Volts
15
12
9
5V
6
3
2.5
2.2
I D = 24A
1.9
1.6
I D = 12A
1.3
1
0.7
0.4
0
0
2
4
6
8
10
V D S - Volts
12
14
-50
16
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Tem perature
25
3.5
VGS = 10V
20
TJ = 125ºC
2.5
I D - Amperes
R D S (on) - Normalized
3
2
1.5
TJ = 25ºC
1
15
10
5
0.5
0
0
12
24
36
I D - Amperes
© 2003 IXYS All rights reserved
48
60
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTH 24N50Q
IXTT 24N50Q
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
42
45
40
36
35
g f s - Siemens
I D - Amperes
30
24
18
12
TJ = 120ºC
25ºC
-40ºC
6
TJ = -40ºC
25ºC
125ºC
30
25
20
15
10
5
0
0
3.5
4
4.5
5
5.5
6
6.5
7
0
6
12
18
V G S - Volts
Fig. 9. Source Current vs. Source-ToDrain Voltage
30
36
42
48
54
Fig. 10. Gate Charge
72
10
60
VDS = 250V
I D = 12A
I G = 10mA
8
48
VG S - Volts
I S - Amperes
24
I D - Amperes
36
TJ = 125ºC
24
TJ = 25ºC
12
6
4
2
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
20
40
60
80
Q G - nanoCoulombs
V S D - Volts
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
1
10000
f = 1MHz
R (th) J C - (ºC/W)
Capacitance - pF
C iss
1000
C oss
0.1
C rss
100
0.01
0
5
10
15
20
25
30
35
40
V DS - Volts
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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