DMTH43M8LK3 Green 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 40V Features ID Max RDS(ON) Max TC = +25°C 3.6mΩ @ VGS = 10V 100A 5.2mΩ @ VGS = 5V 90A Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – Ensures On-State Losses are Minimized Excellent QGD x RDS(ON) Product (FOM) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH43M8LK3Q) Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Power Management Functions DC-DC Converters Backlighting Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 (DPAK) Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMTH43M8LK3-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information TH43M8L YYWW DMTH43M8LK3 Document number: DS38750 Rev. 2 - 2 = Manufacturer’s Marking TH43M8L = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) 1 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH43M8LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +100°C TC = +25°C TC = +100°C Continuous Drain Current, VGS = 10V (Note 5) Continuous Drain Current, VGS = 10V (Note 6) Value 40 ±20 17.6 12.5 ID A IDM IS ISM IAS EAS 100 80 150 70 150 13.2 87 A A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 3.1 47 88 1.7 -55 to +175 Unit W °C/W W °C/W °C ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=1mH Avalanche Energy, L=1mH Unit V V A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) RDS(ON) VSD 1 — — — — 2.9 4.3 — 2.5 3.6 5.2 1.2 V mΩ mΩ V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 5V, ID = 15A VGS = 0V, IS = 20A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 2,693 1,172 52 2.54 38.5 17.6 6.9 6.9 5.2 5.7 23.5 11 35.4 32.9 — — — — — — — — — — — — — — pF VDS = 20V, VGS = 0V, f = 1MHz Ω nC VDS = 0V, VGS = 0V, f = 1MHz nC Test Condition VDS = 20V, ID = 20A ns VDD = 20V, VGS = 10V, ID = 20A, RG = 1.6Ω ns nC IF = 15A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMTH43M8LK3 Document number: DS38750 Rev. 2 - 2 2 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH43M8LK3 100 90 VGS = 5V VDS = 5.0V VGS = 4.5V 25 80 VGS = 4V ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 VGS = 10V 70 60 50 40 VGS = 3.5V 30 20 TA = 150°C 10 20 DRAIN-SOURCEON-RESISTANCE ON-RESISTANCE (m) ( ) RR , ,DRAIN-SOURCE DS(ON) DS(ON) RDS(ON) , DRAIN-SOURCE ON-RESISTANCE(m) ( ) RDS(ON) , DRAIN-SOURCE ON-RESISTANCE T A = 25°C TA = -55°C VGS = 3V 0.5 1 1.5 2 2.5 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic VGS = 5V 5 4 VGS = 10V 3 2 1 0 20 40 60 80 I D, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0 3 100 RDS(ON) , DRAIN-SOURCEON-RESISTANCE ON-RESISTANCE(m) ( ) RDS(ON) , DRAIN-SOURCE VGS = 2.8V 00 6 TA = 125°C TA = 85°C 5 10 6 T A = 175°C 15 1 2 3 4 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 20 5 I D = 15A 18 ID = 20A 16 14 12 10 8 6 4 2 02 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2 VGS = 10V T A = 175°C 5 1.8 RDS(ON), DRAI N-SO URCE ON-RESISTANCE (NORMALIZED) T A = 150°C TA = 125°C 4 T A = 85°C T A = 25°C 3 TA = -55°C 2 1 0 0 5 10 15 20 25 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMTH43M8LK3 Document number: DS38750 Rev. 2 - 2 30 VGS = 10V 1.6 I D = 20A 1.4 VGS = 5V ID = 15A 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature 3 of 7 www.diodes.com April 2017 © Diodes Incorporated 8 3 7 VGS(th ), GATE THRESHO LD VO LTAGE (V) R ON-RESISTANCE (m) ( ) DRAIN-SOURCE ON-RESISTANCE RDS(ON) DS(ON),, DRAIN-SOURCE DMTH43M8LK3 VGS = 5V I D = 15A 6 5 4 VGS = 10V I D = 20A 3 2 1 0 -50 2.5 I D = 1mA 2 I D = 250µA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 30 f=1MHz CT , JUNCTION CAPACITANCE (pF) VGS=0V IS, SOURCE CURRENT (A) 25 T A = 175°C 20 T A = 150°C 15 T A = 125°C T A = 25°C T A = -55°C T A = 85°C 10 5 Ciss 1000 Coss 100 Crss 00 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1000 9 7 VDS = 20V 6 I D = 20A 5 4 3 40 RDS(on) Limited 100 PW = 1s PW = 100ms 10 PW = 10ms PW = 1ms PW = 100µs 1 2 T J(m ax) = 175°C T C = 25°C 1 0 10 15 20 25 30 35 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance PW = 1µs 8 ID, DRAIN CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) 10 5 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMTH43M8LK3 Document number: DS38750 Rev. 2 - 2 40 4 of 7 www.diodes.com 0.1 0.1 PW = 10µs V GS = 10V Single Pulse DUT on Infinite Heatsink 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 April 2017 © Diodes Incorporated DMTH43M8LK3 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R JC(t) = r(t) * R JC D = Single Pulse 0.001 0.000001 0.00001 DMTH43M8LK3 Document number: DS38750 Rev. 2 - 2 R JA = 1.6°C/W Duty Cycle, D = t1/ t2 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 1 10 April 2017 © Diodes Incorporated DMTH43M8LK3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) X1 Y1 Dimensions C X X1 Y Y1 Y2 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMTH43M8LK3 Document number: DS38750 Rev. 2 - 2 6 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH43M8LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMTH43M8LK3 Document number: DS38750 Rev. 2 - 2 7 of 7 www.diodes.com April 2017 © Diodes Incorporated