Diodes FZT653QTA 100v npn high performance transistor Datasheet

FZT653Q
Green
100V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223
Features
Mechanical Data




BVCEO > 100V
IC = 2A High Continuous Current
ICM = 6A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < 300mV @ 1A







Complementary PNP Type: FZT753
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)



Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
C
SOT223
E
B
C
C
B
E
Top View
Top View
Pin-Out
Device Symbol
Ordering Information (Note 5)
Product
FZT653QTA
Notes:
Compliance
Automotive
Marking
FZT653
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Peel
1,000
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
FZT
653
FZT653Q
Document Number D40708 Rev. 1 - 2
YWW
SOT223
FZT 653 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 8 = 2018)
WW or WW = Week Code (01 to 53)
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FZT653Q
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
120
100
7
2
6
Unit
V
V
V
A
A
Value
3
2
1.6
1.2
41.7
62.5
78.1
104
Unit
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
Symbol
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 10)
PD
RJA
RJL
12.9
TJ, TSTG
-55 to +150
W
°C/W
°C
ESD Ratings (Note 11)
Characteristic
Electrostatic Discharge - Human Body Model
Symbol
ESD HBM
Value
4,000
Unit
V
JEDEC Class
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
6. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper.
8. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
9. Same as Note 6, except the device is mounted on minimum recommended pad layout.
10. Thermal resistance from junction to solder-point (at the end of the collector lead).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT653Q
Document Number D40708 Rev. 1 - 2
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FZT653Q
10
VCE(sat)
IC Collector Current (A)
IC Collector Current (A)
Thermal Characteristics and Derating Information
Limit
1
DC
1s
100ms
10ms
100m
T amb=25癈
VCE(sat)
Limit
1
DC
1s
100ms
100m
1ms
100祍
25mm x 25mm
2oz FR4
10m
10
1
10ms
1
VCE Collector-Emitter Voltage (V)
25mm x 25mm
2oz FR-4
40
o
50
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
D=0.1
0
100μ
100
1m
10m 100m
Thermal Resistance ( C/W)
o
o
Thermal Resistance ( C/W)
Safe Operating Area
70
T amb=25 C
1
10
100
1k
50
o
T amb=25 C
40
50mm x 50mm
2oz FR-4
30
D=0.5
20
Single Pulse
D=0.2
10
D=0.05
0
100μ
100 1m
D=0.1
10m 100m
Max Power Dissipation (W)
Max Power Dissipation (W)
1
100μ
100
Single Pulse
o
T amb=25 C
50mm x 50mm
2oz FR-4
25mm x 25mm
2oz FR-4
1m
10m 100m
1
10
1k
100
1k
50mm x 50mm
2oz FR-4
2.5
2.0
25mm x 25mm
2oz FR-4
1.5
1.0
0.5
0.0
0
20
40
60
80
100 120 140 160
o
Temperature ( C)
Pulse Power Dissipation
Document Number D40708 Rev. 1 - 2
100
3.0
Pulse Width (s)
FZT653Q
10
Transient Thermal Impedance
Transient Thermal Impedance
10
1
Pulse Width (s)
Pulse Width (s)
100
10
VCE Collector-Emitter Voltage (V)
Safe Operating Area
60
100祍
50mm x 50mm
2oz FR4
10m
10
1ms
T amb=25癈
Derating Curve
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Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min
120
100
7







70
100
55
25
Typ



< 1

<1
0.13
0.23
0.9
0.8
200
200
110
55
Max



100
10
100
0.3
0.5
1.25
1.0

300


Unit
V
V
V
nA
µA
nA
fT
140
175

MHz
tON
tOFF
COBO



80
1200



30
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage (Note 12)
VCE(SAT)
Base-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
VBE(SAT)
VBE(ON)
DC Current Gain (Note 12)
Current Gain-Bandwidth Product
Switching Times
Output Capacitance
Note:
hFE
V
V
V

ns
pF
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 100V
VCB = 100V, TA = +125°C
VEB = 5.6V
IC = 1A, IB = 100mA
IC = 2A, IB = 200mA
IC = 1A, IB = 100mA
IC = 1A, VCE = 2V
IC = 50mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
VCE = 5V, IC = 100mA,
f = 100MHz
IC = 500mA, VCC = 10V,
IB1 = -IB2 = 50mA
VCB = 10V, f = 1MHz
12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
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Document Number D40708 Rev. 1 - 2
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FZT653Q
Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
1000
hFE Gain
150°C
VCE=2V
105°C
85°C
100
-40°C
10
10
25°C
100
1000
10000
IC - Collector Current (mA)
hFE v Ic
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FZT653Q
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D
Q
b1
C
E
E1
Gauge
Plane
0.25
Seating
Plane
e1
L
b
0°
e
A1
7°
7°
A
0°
-1
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X1
Y1
C1
Y2
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
Y
X
C
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between terminals.
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(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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labeling can be reasonably expected to result in significant injury to the user.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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