GeneSiC GKR7112 Silicon standard recovery diode Datasheet

GKR71/04 thru GKR71/16
Silicon Standard
Recovery Diode
VRRM = 400 V - 1600 V
IF =95 A
Features
• High Surge Capability
• Types up to 1600 V VRRM
DO-5 Package
• Equivalent to SKR71 Series
2
• Not ESD Sensitive
2
1
1
GKR
Maximum ratings, at Tj = 25 °C, unless otherwise specified (GKN has leads reversed)
Conditions
GKR71/04 GKR71/08 GKR71/12 GKR71/14 GKR71/16
Unit
800
1200
1400
1600
V
800
1200
1400
1600
V
95
95
A
1150
1150
A
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
400
DC blocking voltage
VDC
400
Continuous forward current
IF
TC ≤ 100 °C
95
95
95
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 10 ms
1150
1150
1150
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150 -55 to 150
-55 to 150 -55 to 150
-55 to 150 -55 to 150
-55 to 150 -55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
GKR71/04 GKR71/08 GKR71/12 GKR71/14 GKR71/16
Unit
Diode forward voltage
VF
IF = 60 A, Tj = 25 °C
1.5
1.5
1.5
1.5
1.5
V
Reverse current
IR
VR = VRRM, Tj = 180 °C
10
10
10
10
10
mA
0.55
0.55
0.55
0.55
0.55
K/W
Thermal characteristics
Thermal resistance, junction case
RthJC
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1
GKR71/04 thru GKR71/16
Fig 1: Forward Characteristics
Fig 2: Forward Current vs Case Temp
Fig 3: Transient Thermal Impedence vs Time
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Fig 4: Power Dissipation vs Forward Current
2
GKR71/04 thru GKR71/16
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
F
C
E
A
2
1
Inches
Min
Millimeters
Max
A
Min
Max
1/4 –28 UNF
B
0.669
0.687
17.19
17.44
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
11.50
F
0.115
0.200
2.93
5.08
G
-----
0.460
-----
11.68
J
-----
0.280
-----
7.00
K
0.236
-----
6.00
-----
M
-----
0.589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
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3
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