Infineon IDC10D120T6M Diode emcon 4 medium power chip Datasheet

IDC10D120T6M
Diode EMCON 4 Medium Power Chip
FEATURES:
• 1200V EMCON 4 technology
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient
A
This chip is used for:
• low / medium power modules
C
Applications:
• low / medium power drives
Chip Type
VR
IF
Die Size
Package
IDC10D120T6M
1200V
15A
3.30 x 2.98 mm2
sawn on foil
MECHANICAL PARAMETER:
Raster size
3.30 x 2.98
Area total / active
9.83 / 5.33
Anode pad size
mm
2
2.346 x 2.026
Thickness
110
µm
Wafer size
150
mm
Flat position
180
deg
Max. possible chips per wafer
Passivation frontside
Pad metall
Backside metall
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
1531 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM PMD D CID T, L4668B, Edition 0.9, 26.06.07
IDC10D120T6M
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Continuous forward current limited by
Tjmax
Maximum repetitive forward current
limited by Tjmax
Maximum junction and storage
temperature
Condition
Value
1200
Unit
V
1)
IF
A
IFRM
30
Tvj,max ,
Ts t g
-40...+175
°C
2)
Reverse bias safe operating area
(RBSOA)
I F , m a x = 30A, V R , m a x = 1200V, Tvj,op ≤ 150°C, P m a x = tbd kW
1)
depending on thermal properties of assembly
2)
not subject to production test - verified by design/characterisation
Static Electrical Characteristics (tested on wafer), Tj=25 °C
Parameter
Symbol
Reverse leakage current
IR
Cathode-Anode
breakdown Voltage
V Br
Forward voltage drop
VF
Conditions
Value
min.
V R = 1 2 00V
Tj= 2 5 ° C
I R =0. 2 5 mA
Tj= 2 5 ° C
1200
I F = 15 A
Tj= 2 5 ° C
1.35
Typ.
max.
3.5
Unit
µA
V
1.7
2.05
V
Dynamic Electrical Characteristics inductive load (not subject to production test - verified by
design/characterization)
Parameter
Peak reverse recovery
current
Symbol
Conditions
I F= A
IRM
di/dt=A/ µs
VR = V
V GE =- 1 5V
Reverse recovery
charge
I F= A
Qr
di/dt=A/ µs
VR = V
V GE =- 1 5V
I F= A
Reverse recovery energy
E rec
di/dt=A/ µs
VR = V
V GE =- 1 5V
2)
Value
min.
Typ.
2)
max.
Unit
T j = 25 °C
Tj = 125 °C
tbd
A
tbd
µC
tbd
mJ
Tj = 150 °C
T j = 25 °C
Tj = 125 °C
Tj = 150 °C
T j = 25 °C
Tj = 125 °C
Tj = 150 °C
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies, AIM PMD D CID T, L4668B, Edition 0.9, 26.06.07
IDC10D120T6M
CHIP DRAWING:
Edited by INFINEON Technologies, AIM PMD D CID T, L4668B, Edition 0.9, 26.06.07
IDC10D120T6M
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved
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in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
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Edited by INFINEON Technologies, AIM PMD D CID T, L4668B, Edition 0.9, 26.06.07
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