IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 40A, TC =100°C tSC 10µs, TJ(max) = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF TO‐247AC G Gate • Industrial Motor Drive E C Collector C E G IRG7PH44K10D‐EPbF TO‐247AD E Emitter • UPS Features Benefits Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number Package Type IRG7PH44K10DPBF IRG7PH44K10D-EPBF TO-247AC TO-247AD High efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG7PH44K10DPBF IRG7PH44K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 1200 70 40 100 100 20 10 ±30 320 120 -40 to +150 V A V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2013 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 40 Max. 0.40 1.3 ––– ––– Units °C/W November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 1200 — Typ. — 0.80 — 1.9 — 2.4 Gate Threshold Voltage 5.0 — VGE(th) Threshold Voltage Temperature Coeff. — -15 VGE(th)/TJ gfe Forward Transconductance — 16 — 1.0 ICES Collector-to-Emitter Leakage Current — 1200 Gate-to-Emitter Leakage Current — — IGES — 2.5 Diode Forward Voltage Drop VF — 2.4 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — Units Conditions V VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 2mA (25°C-150°C) 2.4 V IC = 25A, VGE = 15V, TJ = 25°C — IC = 25A, VGE = 15V, TJ = 150°C 7.5 V VCE = VGE, IC = 1.2mA — mV/°C VCE = VGE, IC = 1.2mA (25°C-150°C) — S VCE = 50V, IC = 25A, PW = 20µs 35 µA VGE = 0V, VCE = 1200V — VGE = 0V, VCE = 1200V, TJ = 150°C ±100 nA VGE = ±30V 3.3 V IF = 8.0A — IF = 8.0A, TJ = 150°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 10 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 190 130 13 — — — µJ ns A Min. — — — — — — — — — — — Typ. 135 30 65 2.1 1.3 3.4 75 50 315 95 2.8 — — — — — — — — — 2.2 5.0 60 55 340 250 3050 145 80 Max Units Conditions 200 IC = 25A 45 nC VGE = 15V VCC = 600V 100 3.0 2.2 mJ IC = 25A, VCC = 600V, VGE=15V 5.2 RG = 10, TJ = 25°C 95 Energy losses include tail & diode 70 ns reverse recovery 340 115 — — — — — — — — — — mJ ns pF FULL SQUARE IC = 25A, VCC = 600V, VGE=15V RG = 10, TJ = 150°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 100A VCC = 960V, Vp ≤ 1200V VGE = +20V to 0V TJ = 150°C,VCC = 600V, Vp ≤ 1200V VGE = +15V to 0V TJ = 150°C VCC = 600V, IF = 8A VGE = 15V, Rg = 10 Notes: VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF 70 For both: Duty cycle : 50% Tj = 150°C Tcase = 100°C Gate drive as specified Power Dissipation = 128.2W Load Current ( A ) 60 50 40 30 Square Wave: VCC 20 I 10 Diode as specified 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency 70 350 60 300 50 250 40 200 Ptot (W) IC (A) (Load Current = IRMS of fundamental) 30 150 20 100 10 50 0 0 25 50 75 100 125 150 25 50 75 TC (°C) 100 125 150 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 100 10µsec 100 IC (A) 100µsec 1 1msec Tc = 25°C Tj = 150°C Single Pulse 10 DC 1 0.1 1 10 100 1000 10000 VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 150°C; VGE = 15V 3 IC (A) 10 www.irf.com © 2013 International Rectifier 10 100 1000 10000 V CE (V) Fig. 5 - Reverse Bias SOA TJ = 150°C; VGE = 20V Submit Datasheet Feedback November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF 100 100 V GE = 18V V GE = 18V V GE = 15V 80 V GE = 12V ICE (A) ICE (A) V GE = 8.0V 60 V GE = 8.0V 40 40 20 20 0 0 0 2 4 6 8 0 10 2 4 6 8 10 V CE (V) V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 100 160 V GE = 18V 140 V GE = 15V 80 V GE = 12V 120 V GE = 10V 60 TJ =150°C TJ = 25°C 100 V GE = 8.0V IF (A) ICE (A) V GE = 12V V GE = 10V V GE = 10V 60 V GE = 15V 80 40 TJ = -40°C 80 60 40 20 20 0 0 0 2 4 6 8 10 0.0 2.0 4.0 V CE (V) 10.0 12 12 10 10 ICE = 13A ICE = 25A 8 ICE = 13A ICE = 25A 8 ICE = 50A V CE (V) V CE (V) 8.0 Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs 6 ICE = 50A 6 4 4 2 2 0 0 5 10 15 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6.0 V F (V) www.irf.com © 2013 International Rectifier 5 10 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF 12 100 10 ICE = 13A ICE = 25A ICE = 50A ICE (A) V CE (V) 8 75 6 50 4 TJ = 25°C TJ = 150°C 25 2 0 0 5 10 15 20 4 6 8 10 12 14 V GE (V) V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 150°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 1000 8000 7000 tdOFF Swiching Time (ns) Energy (µJ) 6000 5000 EON 4000 3000 2000 tF 100 tdON EOFF tR 1000 10 0 0 10 20 30 40 0 50 10 20 30 Fig. 14 - Typ. Energy Loss vs. IC TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V 7000 50 Fig. 15 - Typ. Switching Time vs. IC TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V 10000 6000 tdOFF 5000 Swiching Time (ns) Energy (µJ) 40 IC (A) IC (A) EON 4000 1000 tF tdON 100 tR EOFF 3000 2000 10 0 20 40 60 80 100 0 20 40 60 80 100 Rg () RG ( ) Fig. 16 - Typ. Energy Loss vs. RG TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 25A; VGE = 15V Fig. 17 - Typ. Switching Time vs. RG TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 25A; VGE = 15V 5 Submit Datasheet Feedback www.irf.com © 2013 International Rectifier November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF 18 14 RG = 12 14 10 IRR (A) IRR (A) RG = 10 10 8 RG = 47 6 RG = 100 4 6 2 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 IF (A) RG ( ) Fig. 18 - Typ. Diode IRR vs. IF TJ = 150°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 150°C 15 1800 1600 13 1400 QRR (nC) IRR (A) 11 9 16A 1200 1000 8A 800 600 7 4A 400 200 5 0 100 200 300 400 0 500 100 200 300 400 500 diF /dt (A/µs) diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 600V; VGE = 15V; IF = 8.0A; TJ = 150°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 600V; VGE = 15V; TJ = 150°C 40 350 160 RG = 300 120 20 80 Time (µs) RG = 47 RG = 100 100 30 Current (A) 200 150 Isc Tsc RG =10 250 Energy (µJ) 50 10 0 2 4 6 8 10 12 14 16 18 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 150°C 6 www.irf.com © 2013 International Rectifier 40 8 10 12 14 16 18 V GE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 600V; TC = 150°C Submit Datasheet Feedback November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF 16 V GE, Gate-to-Emitter Voltage (V) 10000 Capacitance (pF) Cies 1000 100 Coes Cres 14 V CES = 600V 12 V CES = 400V 10 8 6 4 2 0 10 0 100 200 300 400 500 0 600 20 40 60 80 100 120 140 Q G, Total Gate Charge (nC) V CE (V) Fig. 25 - Typical Gate Charge vs. VGE ICE = 25A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 4 3 C 4 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Ri (°C/W) i (sec) 0.010602 0.000026 0.112078 0.000155 0.169631 0.003607 0.098447 0.018763 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 0.001 C i (sec) 0.016084 0.000015 0.462040 0.000462 0.554156 0.003501 0.266112 0.021934 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 4 Ri (°C/W) 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC G force DUT 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF 50 1000 50 40 800 600 30 600 90% ICE 400 20 VCE (V) 800 ICE (A) VCE (V) tf 10% VCE 200 0 40 30 400 20 90% ICE 10 200 10 10% ICE TEST CURRENT tr 10% ICE 10% VCE 0 0 0 ICE (A) 1000 Eon Loss Eoff Loss -200 -0.5 0 -10 0.5 -10 -200 -0.5 1 0 0.5 1 time (µs) time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 800 800 45 200200 QRR VCE VCE 600 600 30 150 150 tRR 400 0 -15 ICE 200 50 ICE 200 50 0 Peak IRR 0 0 0 -200 -50 -20 -30 -0.20 0.00 0.40 0.60 0.80 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 9 www.irf.com © 2013 International Rectifier -10 0 10 time (µs) -200 0.20 Ice (A) 100 Ice (A) IF (A) VceVce (V) (V) 15 100 400 -20 -10 -50 0 10 time (µs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH44K10DPbF/IRG7PH44K10D-EPbF Qualification Information† Industrial† Qualification Level Moisture Sensitivity Level TO-247AC (per JEDEC JESD47F) †† N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013