MOSFET SMD Type P-Channel MOSFET AO6401A-HF (KO6401A-HF) ( SOT-23-6 ) Unit: mm +0.1 ● VDS (V) =-30V 6 5 4 1 2 3 +0.2 1.6 -0.1 ● ID =-5 A (VGS =-10V) ● RDS(ON) ＜ 64mΩ (VGS =-4.5V) ● RDS(ON) ＜ 85mΩ (VGS =-2.5V) 0.55 ● RDS(ON) ＜ 47mΩ (VGS =-10V) +0.2 2.8 -0.1 ■ Features 0.4 0.4 -0.1 +0.02 0.15 -0.02 +0.01 -0.01 ● Pb−Free Package May be Available. The G−Suffix Denotes a +0.2 -0.1 +0.1 1.1 -0.1 Pb−Free Lead Finish 0-0.1 +0.1 0.68 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA Unit V -5 -4 A -28 2 1.3 W 62.5 110 RthJL 50 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO6401A-HF (KO6401A-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance On state drain current VGS(th) RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Test Conditions ID=-250μA, VGS=0V Min -1 VDS=-30V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±12V VDS=VGS , ID=-250μA -0.5 74 64 VGS=-2.5V, ID=-1A 85 -28 645 VGS=0V, VDS=-15V, f=1MHz 4 VGS=-10V, VDS=-15V, ID=-5A 17 8.5 1.5 6.5 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD IF=-5A, dI/dt=100A/μs IS=-1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking 41** F www.kexin.com.cn Ω nC 3.5 ns 41 9 tf trr 80 7 td(on) Qrr pF 14 Turn-On DelayTime Body Diode Reverse Recovery Time 780 12 2.5 Body Diode Reverse Recovery Charge S 80 55 VGS=0V, VDS=0V, f=1MHz mΩ A 18 Qgd tr V VGS=-10V, ID=-5A TJ=125℃ Gate Drain Charge td(off) -1.3 VGS=-4.5V, ID=-4A Qgs Turn-Off DelayTime nA 47 VDS=-5V, ID=-5A uA ±100 VGS=-10V, ID=-5A VGS=-10V, VDS=-5V Unit V VDS=-30V, VGS=0V Qg Turn-On Rise Time Max -30 Gate Source Charge Turn-Off Fall Time 2 Typ 11 13.5 3.5 nC -2.5 A -1 V MOSFET SMD Type P-Channel MOSFET AO6401A-HF (KO6401A-HF) ■ Typical Characterisitics 25 20 10V VDS=-5V 4.5V 15 15 -ID(A) -ID (A) 20 -2.5V 10 10 5 5 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 100 Normalized On-Resistance 1.8 80 RDS(ON) (mΩ Ω) 25°C VGS=-2.0V 0 VGS=2.5V 60 VGS=4.5V 40 VGS=10V 20 VGS=-10V ID=-5A 1.6 1.4 VGS=-4.5V 5 ID=-4A 1.2 2 VGS=-2.5V ID=-1A 1 0.8 0 2 0 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 4 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 150 ID=-5A 130 1.0E+00 1.0E-01 110 90 125°C -IS (A) RDS(ON) (mΩ Ω) 125°C 125°C 1.0E-02 1.0E-03 70 25°C 50 25°C 1.0E-04 1.0E-05 30 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO6401A-HF (KO6401A-HF) ■ Typical Characterisitics 10 1000 VDS=-15V ID=-5A 800 Capacitance (pF) -VGS (Volts) 8 6 4 600 400 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 15 Coss Crss 0 100.0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 25 10000 TA=25°C 100µs 1.0 1ms 10ms 0.1 1000 10µs RDS(ON) limited TJ(Max)=150°C TA=25°C Power (W) -ID (Amps) 10.0 10 10s DC 1 0.0 0.01 0.1 1 -VDS (Volts) 10 0.00001 100 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=110°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) . Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Thermal Resistance 100 www.kexin.com.cn 100 1000