AOSMD AOD5B65M1 Very fast and soft recovery freewheeling diode Datasheet

AOD5B65M1
650V, 5A Alpha IGBT TM
With soft and fast recovery anti-parallel diode
General Description
Product Summary
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(SAT) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
VCE
IC (TC=100°C)
650V
5A
VCE(sat) (TJ=25°C)
1.57V
Applications
• Motor Drives
• Home appliance applications such as refrigerators
and washing machines
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
TO-252
DPAK
Top View
C
Bottom View
C
C
G
E
G
E
G
E
AOD5B65M1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD5B65M1
TO252
Tape & Reel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOD5B65M1
Collector-Emitter Voltage
V CE
650
Gate-Emitter Voltage
V GE
±30
2500
Units
V
V
Continuous Collector TC=25°C
TC=100°C
Current
IC
Pulsed Collector Current, Limited by TJmax
I CM
15
A
Turn off SOA, VCE ≤ 650V, Limited by TJmax
I LM
15
A
Continuous Diode
Forward Current
TC=25°C
TC=100°C
Diode Pulsed Current, Limited by TJmax
Short circuit withstanding time 1)
VGE = 15V, VCC ≤ 400V, TJ ≤ 150°C
Power Dissipation
TC=25°C
TC=100°C
Junction and Storage Temperature Range
IF
10
5
10
5
A
I FM
15
A
t SC
5
µs
PD
T J , T STG
69
28
-55 to 150
Maximum lead temperature for soldering
TL
300
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
AOD5B65M1
Parameter
Symbol
R θ JA
55
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
R θ JC
1.8
Maximum Diode Junction-to-Case
R θ JC
5.5
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Rev.1.0: April 2015
A
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W
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 9
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
IC=1mA, VGE=0V, TJ=25°C
650
-
-
V
V CE(sat)
VGE=15V, IC=5A
Symbol
VF
Collector-Emitter Saturation Voltage
VGE=0V, IC=5A
Diode Forward Voltage
V GE(th)
Gate-Emitter Threshold Voltage
VCE=5V, IC=1mA
I CES
Zero Gate Voltage Collector Current
VCE=650V, VGE=0V
TJ=25°C
-
1.57
1.98
TJ=125°C
-
1.87
-
TJ=150°C
-
1.95
-
V
TJ=25°C
-
1.8
2.25
TJ=125°C
-
1.79
-
TJ=150°C
-
1.75
-
-
5.1
-
V
V
TJ=25°C
-
-
10
TJ=125°C
-
-
100
TJ=150°C
-
-
500
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±30V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=5A
-
4.1
-
S
-
348
-
pF
-
36
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCC=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
13
-
pF
Qg
Total Gate Charge
-
14
-
nC
Q ge
Gate to Emitter Charge
-
3
-
nC
Q gc
Gate to Collector Charge
-
6.5
-
nC
-
30
-
A
VGE=0V, VCC=0V, f=1MHz
Rg
Gate resistance
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
-
6
-
Ω
t D(on)
Turn-On DelayTime
-
8.5
-
ns
tr
Turn-On Rise Time
-
13
-
ns
-
106
-
ns
-
18
-
ns
I C(SC)
VGE=15V, VCC=520V, IC=5A
VGE=15V, VCC=400V,
tsc≤5us, TJ≤150°C
Short circuit collector current
t D(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
E on
Turn-On Energy
-
0.08
-
mJ
E off
Turn-Off Energy
-
0.07
-
mJ
E total
t rr
Total Switching Energy
-
0.15
-
mJ
Diode Reverse Recovery Time
-
195
-
Q rr
Diode Reverse Recovery Charge
TJ=25°C
VGE=15V, VCC=400V, IC=5A,
RG=60Ω
-
0.24
-
ns
µC
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, TJ=150°C)
-
2.78
-
A
t D(on)
Turn-On DelayTime
-
7
-
ns
tr
Turn-On Rise Time
-
14
-
ns
t D(off)
Turn-Off Delay Time
-
127
-
ns
tf
Turn-Off Fall Time
-
30
-
ns
E on
Turn-On Energy
-
0.09
-
mJ
E off
Turn-Off Energy
-
0.12
-
mJ
E total
t rr
Total Switching Energy
-
0.21
-
mJ
Diode Reverse Recovery Time
-
273
-
Q rr
Diode Reverse Recovery Charge
-
0.38
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
3.3
-
A
TJ=25°C
IF=5A, dI/dt=200A/µs, VCC=400V
I rm
TJ=150°C
VGE=15V, VCC=400V, IC=5A,
RG=60Ω
TJ=150°C
IF=5A, dI/dt=200A/µs, VCC=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2015
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Page 2 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
25
17V
20V
20
15V
IC (A)
IC (A)
13V
15
11V
10
13V
15
10
9V
5
20V
17V
15V
20
11V
9V
5
VGE= 7V
VGE=7V
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
VCE(V)
Figure 2: Output Characteristic
(Tj=150°C )
VCE(V)
Figure 1: Output Characteristic
(Tj=25°C )
15
15
VCE=20V
12
9
9
150°C
150°C
IF (A)
IC (A)
12
6
6
25°C
3
-40°C
3
25°C
-40°C
0
0
3
6
9
12
VGE(V)
Figure 3: Transfer Characteristic
15
0
3
4
2.5
IC=10A
3
4
5
10A
2
3
VSD (V)
VCE(sat) (V)
2
VF (V)
Figure 4: Diode Characteristic
5
IC=5A
2
1
5A
1.5
1
IF=1A
1
IC=2.5A
0.5
0
0
0
25
50
75
100
125
150
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.1.0: April 2015
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0
25
50
75
100
125
150
Temperature (°C )
Figure 6: Diode Forward voltage vs. Junction
Temperature
Page 3 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=520V
IC=5A
12
1000
Capacitance (pF)
VGE(V)
Cies
9
6
3
0
100
Coes
10
Cres
1
0
4
8
12
16
20
0
Qg(nC)
Figure 7: Gate-Charge Characteristics
8
16
24
32
40
VCE(V)
Figure 8: Capacitance Characteristic
100
Power Disspation (W)
80
60
40
20
0
25
50
75
100
125
150
TCASE(°C)
Figure 10: Power Disspation as a Function of
Case
12
1E-03
1E-04
8
1E-05
ICE(S) (A)
Current rating IC(A)
10
6
VCE=650V
1E-06
4
1E-07
2
1E-08
0
VCE=520V
1E-09
25
50
75
100
125
150
TCASE(°C)
Figure 11: Current De-rating
Rev.1.0: April 2015
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0
25
50
75
100
125
150
Temperature (°C )
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
100
10
1
100
10
1
2
4
6
8
IC (A)
Figure 13: Switching Time vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=60Ω)
10000
10
0
100
200
300
400
500
Rg (Ω)
Figure 14: Switching Time vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=5A)
0
25
50
600
7
Td(off)
Tf
Td(on)
Tr
6
VGE(TH)(V)
1000
Switching Time (nS)
Td(off)
Tf
Td(on)
Tr
1000
Switching Time (nS)
1000
Switching Time (nS)
10000
Td(off)
Tf
Td(on)
Tr
100
5
4
3
10
2
1
1
25
Rev.1.0: April 2015
50
75
100
125
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V,VCE=400V,IC=5A,Rg=60Ω)
150
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75
100
125
150
TJ (°C)
Figure 16: VGE(TH) vs. Tj
Page 5 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.6
0.8
Eoff
Eoff
Eon
Switching Energy (mJ)
SwitchIng Energy (mJ)
0.5
Etotal
0.4
0.3
0.2
0.1
0.7
Eon
0.6
Etotal
0.5
0.4
0.3
0.2
0.1
0
0.0
2
4
6
8
10
0
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=60Ω)
200
300
400
500
600
Rg (Ω)
Figure 18: Switching Loss vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=5A)
0.3
0.3
Eoff
Eoff
Eon
Eon
0.25
Switching Energ y (mJ)
0.25
Switching Energy (mJ)
100
Etotal
0.2
0.15
0.1
0.05
Etotal
0.2
0.15
0.1
0.05
0
0
25
50
75
100
125
150
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=5A,Rg=60Ω)
Rev.1.0: April 2015
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200
250
300
350
400
450
500
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=150°C,VGE=15V,IC=5A,Rg=60Ω)
Page 6 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
25
400
20
320
15
240
25
150°C
Irm(A)
Qrr
320
150°C
Trr (nS)
Qrr (nC)
25°C
480
20
150°C
Trr
15
S
640
25°C
10
160
5
80
0
0
10
150°C
Irm
160
25°C
5
S
25°C
2
0
4
6
8
10
IF(A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
(VGE=15V,VCE=400V,di/dt=200A/µs)
2
500
25
300
400
20
240
15
180
4
6
8
10
IF (A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V,VCE=400V,di/dt=200A/µs)
30
150°C
25
Trr
Qrr
Irm(A)
300
25°C
200
10
Trr (nS)
Qrr (nC)
150°C
20
25°C
15
120
150°C
S
0
10
150°C
100
5
25°C
0
200
300
400
500
600
di/dt (A/µS)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V,VCE=400V,IF=5A)
Rev.1.0: April 2015
S
5
25°C
0
100
60
Irm
0
0
100
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200
300
400
500
600
di/dt (A/µS)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V,VCE=400V,IF=5A)
Page 7 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
Single Pulse
0.01
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
Single Pulse
0.01
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: April 2015
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Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: April 2015
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Page 9 of 9
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