Renesas NHD008A Intelligent power device Datasheet

Datasheet
µPD166034T1U
INTELLIGENT POWER DEVICE
R07DS1168EJ0200
Rev.2.00
May 22, 2015
1. Overview
1.1 Description
Family:
µPD166034T1U is part of 2nd Generation Intelligent Power Devices (IPD). They are N-channel high-side switches
with charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded
protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number
combination.
Scalability:
Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design
depending on target load.
Robustness:
Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against
long term and repetitive short circuit condition.
1.2 Features
•
•
•
•
•
•
•
•
•
•
•
•
Built-in charge pump
3.3V compatible logic interface
Low standby current
Short circuit protection
 Shutdown by over current detection
 Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control)
 Absolute Tch over temperature protection
Built-in diagnostic function
 Proportional load current sensing
 Defined fault signal in case of abnormal load condition
Loss of ground protection
Under voltage lock out
Active clamp operation at inductive load switch off
Cross current protection in case of H-bridge high side usage
Reverse battery protection by turn on the output
AEC Qualified
RoHS compliant
1.3 Application
• Light bulb switching from 55W to 75W according to on-state resistance
• Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor
• Power supply switch, fail-safe switch of 14V DC grounded system
Note: The information contained in this document is the one that was obtained when the document was issued,
and may be subject to change.
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Page 1 of 39
µPD166034T1U Datasheet
2. Ordering Information
2. Ordering Information
Part No.
UPD166034T1U-E1-AY
Note:
Nick name
NHS008A
Lead plating
Pure Matte Sn
Packing
Tape 2500 p/reel
Package
TO252-7
Part No. and Nick name are tentative and might change at anytime without notice.
2.1 Nick name
N H S 008 A
On-state resistance
S: Single channel
D: Dual channel
Q: Quad channel
A: TO252-7
B: 12-pin Power HSSOP
C: 24-pin Power HSSOP
Nch High-side
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Page 2 of 39
µPD166034T1U Datasheet
3. Specification
3. Specification
3.1 Block Diagram
3.1.1 Nch High-side Single Device
Voltage and Current Definition
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Page 3 of 39
µPD166034T1U Datasheet
3. Specification
3.2 Pin Configuration
Tab
3.2.1 TO252-7 Pin Configuration
Pin No.
1
2
3
4, Tab
5
6
7
Terminal Name
OUT
GND
IN
VCC
IS
SEN
OUT
1
2 3 4 5 6 7
Pin function
Terminal Name
GND
Pin function
Ground connection
Recommended connection
Connected to GND through a 100 Ω resistor
Refer chapter 6.
IN
Input signal
IS
Current sense and Diagnosis output signal
Connected to MCU port through 2k-50K serial
resistor.
Connected to GND through a 0.67K-5K resistor.
Not connect if this pin is not used.
SEN
Sense enable input
Connected to MCU port through 2k-50K serial
resistor. Not connect if this pin is not used.
OUT
Protected high-side power output
Connected to load with small 50-100nF capacitor
in parallel.
VCC
Positive power supply for logic supply as well as
output power supply
Connected to battery voltage with small 100nF
capacitor in parallel.
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Page 4 of 39
µPD166034T1U Datasheet
3. Specification
3.3 Absolute Maximum Ratings
Ta=25°C, unless other specified
Parameter
Vcc Voltage
Vcc Voltage at reverse
battery condition
Symbol
VCC
-VCC
Rating
28
-16
Unit
V
V
Vcc voltage under Load
Dump condition
Load Current
Total power dissipation
for whole device (DC)
Vload dump
42
V
IL
PD
Self limited
1.85
A
W
Voltage at IN pin
VIN
-2 ~ 16
V
-16
IN pin current
Voltage at IS pin
IIN
VIS
10
VCC
mA
V
-16
V
IS Reverse current at
reverse battery condition
IIS(Rev)
-30
mA
Voltage at SEN pin
VSEN
-2 ~ 16
V
-16
SEN pin current
Channel Temperature
Storage Temperature
ESD susceptibility
ISEN
Tch
Tstg
VESD
10
-40 to +150
-55 to +150
2000
mA
°C
°C
V
4000
200
Inductive load switch-off
EAS
210
energy dissipation single
pulse
Inductive load switch-off
EAR
150
energy dissipation
repetitive pulse
Remark) All voltages refer to ground pin of the device
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Test Condition
RL=1.5Ω, t<2min,
RIN=2kΩ, RSEN=2kΩ, RIS=1kΩ, RGND=100Ω
RI=1Ω, RL=1.5Ω, RIS=1kΩ, RIN=2kΩ, RSEN=2kΩ,
RGND=100Ω, td=400ms
Ta=85°C,
Device on 50mm×50mm×1.5mm epoxy PCB FR4
with 6 cm2 of 70 µm copper area
DC
RIN=2kΩ
At reverse battery condition, t<2min,
RIN=2kΩ, RSEN=2kΩ
DC
DC
RIS=1kΩ
At reverse battery condition, t<2min,
RL=1.5Ω, RIS=1kΩ
At reverse battery condition, t<2min,
RL=1.5Ω
DC
RSEN=2kΩ
At reverse battery condition, t<2min
RIN=2kΩ, RSEN=2kΩ
DC
HBM
AEC-Q100-002 std.
R=1.5kΩ, C=100pF
All pin
mJ
IEC61000-4-2 std.
VCC, OUT
R=330Ω, C=150pF,
100nF at VCC and OUT
MM
AEC-Q100-003 std.
R=0Ω, C=200pF
VCC=13.5V, Tch,start<150°C, RL=1.5Ω
mJ
VCC=13.5V, Tch,start=85°C, RL=1.5Ω
V
Page 5 of 39
µPD166034T1U Datasheet
3. Specification
3.4 Thermal Characteristics
Parameter
Thermal characteristics
Symbol
Rth(ch-a)
Rth(ch-c)
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Min
Typ
35
0.8
Max
Unit
°C/W
Test Condition
According to JEDEC JESD51-2, -5, -7 on
FR4 2s2p board
°C/W
Page 6 of 39
µPD166034T1U Datasheet
3. Specification
3.5 Electrical Characteristics
Operation function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Parameter
Operating Voltage
VCC
Operating current
Output Leakage current
IGND
IL(off)
Symbol
Min
4.5
Typ
Max
28
Unit
V
Test Condition
VIN=4.5V, RL=1.5Ω
2.2
4
0.5
mA
µA
VIN=4.5V
Tch=25°C
5
Standby current
ICC(off)
0.5
Tch=-40~125°C
µA
1.5
On-state resistance
Ron
Low level IN pin voltage
High level IN pin voltage
Low level IN pin current
High level IN pin current
Clamping IN pin voltage 1)
Low level SEN pin voltage
High level SEN pin voltage
Low level SEN pin current
High level SEN pin current
Clamping SEN pin voltage1)
Under voltage shutdown
Under voltage restart
Turn on time
Turn on delay time
Turn off time
Turn off delay time
Slew rate on
Slew rate off
Switching drift1)
VIL
VIH
IIL
IIH
VZIN
VSENL
VSENH
ISENL
ISENH
VZSEN
VCC(Uv)
VCC(Cpr)
ton
td(on)
toff
td(off)
dV/dton
-dV/dtoff
ton-toff
Turn on energy loss 1)
Turn off energy loss 1)
Driving capability 1)
Eon
Eoff
Dr(capa)
8
Tch=-40~85°C
mΩ
16
0.8
2.5
2
2
5
25
25
6
0.8
2.5
2
2
5
25
25
6
4.5
5.0
200
100
200
150
1.0
1.0
+50
-50
1.2
1.2
115
145
2.4
2.4
Tch=25°C
V
V
µA
µA
V
V
V
µA
µA
V
V
V
µs
µs
µs
µs
V/µs
V/µs
µs
mJ
mJ
mΩ
Tch=25°C
Tch=150°C
VCC=13.5V,
VIN=0V,
VSEN=0V,
VIS=0V,
VOUT=0V,
VGND=0V
VCC=13.5V,
VIN=0V,
VSEN=0V,
VIS=0V,
VOUT=0V,
VGND=0V
IL=9A
VIN=0.8V
VIN=2.5V
VSEN=0.8V
VSEN=2.5V
VCC=13.5V, RL=1.5Ω
Vcc = 9 to 18V drift from Vcc=13.5V,
Tch=-40 to 150°C drift from Tch=25°C
ton; Vout=Vcc-1.5V after input signal active
VCC=13.5V,Tch=25°C, RL=1.5Ω
Tch=25°C, VCC=8~16V
Tch=105°C, VCC=8~16V
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Page 7 of 39
µPD166034T1U Datasheet
3. Specification
Protection function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Parameter
Over current detection
current
Current limitation under
power limitation toggling
Current limitation under
absolute thermal toggling
Current limitation trigger
threshold during turn-on
Current limitation trigger
threshold during on-state
Current limitation trigger
time after input signal
positive slope
Absolute thermal
shutdown temperature
Thermal hysteresis for
absolute thermal toggling
Power limitation thermal
shutdown temperature
Power limitation restart
temperature
Output clamp at inductive
load switch off
Output current while GND
disconnection
On-state resistance at
reverse battery condition
Symbol
IL(SC)
Min
80
Typ
130
Ron(rev)
9
Gnd current at reverse
battery condition
IGND(rev)
-2
Max
Unit
A
Test Condition
VCC=13.5V, Von=5V, Tch=25°C
IL(CL)
60
A
VCC=13.5V
IL(TT)
25
A
VCC=13.5V
Von(CL1)
1.0
V
VCC=13.5V
Von(CL2)
0.3
V
VCC=13.5V
td(CL)
500
µs
VCC=13.5V
aTth
150
°C
aTth,hys
20
°C
dTth
40
°C
dTth,rest
art
Von,clam
p
IL(GND)
20
°C
30
40
V
1
mA
IIN=0A, ISEN=0A, IGND=0A, IIS=0A
mΩ
Tch=25°C
Tch=150°C
mA
VCC=-16V, Tch=25°C,
IIN=0A, ISEN=0A, IIS=0A
18
VCC=13.5V, IL=40mA, Tch=25°C
VCC=-13.5V,
IL=9A
Remark) All voltages refer to ground pin of the device
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Page 8 of 39
µPD166034T1U Datasheet
3. Specification
Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter
Current sense ratio
Symbol
KILIS
Current sense drift depend
on temperature
dKILIS
Sense current offset
current
Min
7520
6580
-15
Typ
9400
9400
Max
11280
12220
15
Unit
Iis,offset
2
µA
VCC=13.5V, Tch,start=25°C,
RL=1.5Ω
IL<10mA
Sense current leakage
current
Iis,dis
1
µA
VIN=0V, VSEN=0V
Sense current under fault
condition
Iis,fault
3
3.5
3.5
9.5
9
5.5
mA
VCC=13.5V, RIS=0.67kΩ
VCC=13.5V, RIS=1kΩ
VCC=13.5V, RIS=2kΩ
Minimum output current for
current sense output
IL(CSE)
10
100
mA
IIS>5µA
Open load detection
threshold at off-state
VOUT(OL)
2.0
5.0
V
VIN=0V, Tch = -40~105°C
OUT terminal current at
Open load condition
IOUT(OL)
-1.0
µA
VIN =0V
Open load detection delay
after input negative slope
tdop
µs
VIN=4.5V to 0V, VOUT>VOUT(OL)
300
Test Condition
IL=9.2A
IL=1.8A
%
Remark) All voltages refer to ground pin of the device
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Page 9 of 39
µPD166034T1U Datasheet
3. Specification
Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter
Sense current settling time
after input signal positive
slope
Symbol
tsis(on)
Min
Typ
Max
250
Unit
µs
Test Condition
VCC=13.5V, VIN=0V to 4.5V,
IL/IIS=KILIS, RL=1.5Ω
Sense current settling time
after input signal negative
slope 1)
tsis(off)
10
µs
VIN=4.5V to 0V
Sense current settling time
after sense enable during
on-state 1)
tssen(on)
20
µs
VSEN=0V to 4.5V, RL=1.5Ω
Sense current settling time
after sense disable during
on-state 1)
tssen(off)
20
µs
VSEN=4.5V to 0V, RL=1.5Ω
Sense current settling time
during on-state 1)
tsis(LC)
20
µs
RL=1.5Ω to 0.75Ω
Fault signal delay after
over current detection 1)
tdsc(fault)
10
µs
VIN=0V to 4.5V, IL=IL(SC)
Fault signal delay after
power limitation valid 1)
tdpl(fault)
10
µs
Von>Von(CL1)
Fault signal delay after
power limitation invalid 1)
tdpl(off)
30
µs
Von<Von(CL1)
Fault signal delay after
absolute thermal shutdown
tdot(fault)
10
µs
IIS→IIS,fault
Fault signal delay after
open load detection at offstate 1)
tdop(fault)
10
µs
VIN=0V, VOUT>VOUT(OL)
Fault signal delay after
input negative slope 1)
tdoff(fault)
10
µs
VIN=4.5V to 0V
1)
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Page 10 of 39
µPD166034T1U Datasheet
3. Specification
3.6 Feature Description
3.6.1 Driving Circuit
The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open
or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal is
pulled down with constant current source.
VIN
IN
0
RESD
VOUT
IIN
Vcc
Internal ground
OFF
ON
OFF
ON
0
GND
t
Switching a resistive load
Switching lamps
VIN
VIN
0
0
IL
IL
0
0
VOUT
VOUT
Vcc
0
0
IIS
IIS
0
R07DS1168EJ0200 Rev.2.00
May 22, 2015
t
0
IIS,lim
t
Page 11 of 39
µPD166034T1U Datasheet
3. Specification
Switching an inductive load
VIN
0
IL
0
VOUT
Vcc
0
Von,clamp
IIS
0
t
The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,
the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the
source of SW1 (= gate of output MOS) falls below the GND voltage.
SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit.
When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.
SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is
not activated.
VCC
RESD
IN
SEN
ZDAZ ZDAZ
RESD
SW1
logic
ZDESD
OUT
Internal ground
GND
R07DS1168EJ0200 Rev.2.00
May 22, 2015
IS
Page 12 of 39
µPD166034T1U Datasheet
3. Specification
3.6.2 Device behavior at over voltage condition
In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of
logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load
from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC.
VCC
IN
RIN
SEN
RESD
RESD
logic
RSEN
ZDAZ
ZDESD
ZDAZ
N-ch
MOSFET
ZDESD
uC
OUT
IPD
Internal ground
GND
IS
RGND
RIS
RL
3.6.3 Device behavior at low voltage condition
If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase
over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown.
The IS output is cleared during off-state.
VIN
0
IL
0
VCC
VOUT
VCC(Uv)
VCC(CPr)
0
t
3.6.4 Loss of Ground protection
In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off
if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state.
In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage.
R07DS1168EJ0200 Rev.2.00
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Page 13 of 39
µPD166034T1U Datasheet
3. Specification
3.6.5 Short circuit protection
Turn-on in an over load condition including short circuit condition
The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched
until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device
restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected
and restarts automatically in absolute thermal toggling mode. The device starts current limitation when (d) is detected.
The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) IL > IL(SC)
(b) deltaTch > dTth
(c) Tch > aTth
(d) Von > Von(CL1) after td(CL)
Over load condition including short circuit condition during on-state
The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2).
The device shuts down automatically when condition (b) is detected. The device restarts automatically in power
limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in
absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) Von > Von(CL2)
(b) deltaTch > dTth
(c) Tch > aTth
Power limitation control
Current limitation control with IL(CL) when auto restart from deltaTch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta
Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current
limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling
operation with power limitation mode.
Absolute thermal toggling
Current limitation control with IL(TT) when auto restart from absolute Tch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from
absolute Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as
current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during
toggling operation with thermal toggling mode.
delta Tch
Junction temperature differences between thermal sensor of power area and thermal sensor of control area.
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Page 14 of 39
µPD166034T1U Datasheet
3. Specification
State transition diagram
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Yes
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
IL(lim)=IL(TT)
Input
Return
B
Yes
No
Yes
Von < Von(CL2)
Current limitation
No
Thermal
td(CL) unexpired
No
A
Yes
dTch > dTth
Yes
Thermal
IL > IL(lim)
B
No
No
Yes
Shutdown
IL(lim)=IL(CL)
Input
Input
Over current
C
No
IN = Low
No
Yes
Input
C
Return
Shutting down
No
Yes
IL > IL(NL)
Yes
IN = Low
Yes
Von=Von(NL)
No
Turn-on
B
Return
No
C
Turn-off
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Page 15 of 39
µPD166034T1U Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(a) IL > IL(SC)
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
IL(lim)=IL(TT)
Input
Return
B
Yes
No
Yes
Von < Von(CL2)
Current limitation
No
Thermal
td(CL) unexpired
No
A
Yes
dTch > dTth
Yes
Thermal
IL > IL(lim)
B
No
No
Yes
Shutdown
IL(lim)=IL(CL)
Input
Input
Over current
C
No
Yes
IN = Low
No
Yes
Input
C
Return
Shutting down?
No
Yes
IL > IL(NL)
Yes
IN = Low
Yes
Von=Von(NL)
No
Turn-on
B
No
Return
Before over current detection
C
Turn-off
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May 22, 2015
After over current detection
Exit from off-latch
Page 16 of 39
µPD166034T1U Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
IL(lim)=IL(TT)
Input
Return
B
Yes
No
Yes
Von < Von(CL2)
Current limitation
No
Thermal
td(CL) unexpired
No
A
Yes
dTch > dTth
Yes
Thermal
IL > IL(lim)
B
No
No
Yes
Shutdown
IL(lim)=IL(CL)
Input
Input
Over current
C
No
Yes
IN = Low
No
Yes
Input
C
Return
Shutting down?
No
Yes
IL > IL(NL)
Yes
IN = Low
Yes
Von=Von(NL)
No
Turn-on
B
No
Return
Before dTcht detection
C
Turn-off
During shutdowning by dTth detection
During current limitation control
Power limitation control
Exit from power limitation control
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Page 17 of 39
µPD166034T1U Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
IL(lim)=IL(TT)
Input
Return
B
Yes
No
Yes
Von < Von(CL2)
Current limitation
No
Thermal
td(CL) unexpired
No
A
Yes
dTch > dTth
Yes
Thermal
IL > IL(lim)
B
No
No
Yes
Shutdown
IL(lim)=IL(CL)
Input
Input
Over current
C
No
Yes
IN = Low
No
Yes
Input
C
Return
Shutting down?
No
Yes
IL > IL(NL)
Yes
IN = Low
Yes
Von=Von(NL)
No
Turn-on
B
No
Return
Before aTcht detection
C
Turn-off
During shutdowning by aTth detection
During current limitation control
Thermal toggling
Exit from power limitation control
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Page 18 of 39
µPD166034T1U Datasheet
3. Specification
An over load condition which is include a short circuit condition during on-state
(a) Von > Von(CL) with weak short condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
IL(lim)=IL(TT)
Input
Return
B
Yes
No
Yes
Von < Von(CL2)
Current limitation
No
Thermal
td(CL) unexpired
No
A
Yes
dTch > dTth
Yes
Thermal
IL > IL(lim)
B
No
No
Yes
Shutdown
IL(lim)=IL(CL)
Input
Input
Over current
C
No
Yes
IN = Low
No
Yes
Input
C
Return
Shutting down?
No
Yes
IL > IL(NL)
Yes
IN = Low
Yes
Von=Von(NL)
No
Turn-on
B
No
Return
Before Von(CL) detection after turn on
C
Turn-off
After Von(CL) detection
During shutdowning by dTth detection
During current limitation control
Power limitation control
Exit from power limitation control
R07DS1168EJ0200 Rev.2.00
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Page 19 of 39
µPD166034T1U Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(a) Von > Von(CL) with dead condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
IL(lim)=IL(TT)
Input
Return
B
Yes
No
Yes
Von < Von(CL2)
Current limitation
No
Thermal
td(CL) unexpired
No
A
Yes
dTch > dTth
Yes
Thermal
IL > IL(lim)
B
No
No
Yes
Shutdown
IL(lim)=IL(CL)
Input
Input
Over current
C
No
Yes
IN = Low
No
Yes
Input
C
Return
Shutting down?
No
Yes
IL > IL(NL)
Yes
IN = Low
Yes
Von=Von(NL)
No
Turn-on
B
No
Return
Before Von(CL) detection after turn on
C
Turn-off
After Von(CL) detection
After over current detection
Exit from power limitation control
R07DS1168EJ0200 Rev.2.00
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Page 20 of 39
µPD166034T1U Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
IL(lim)=IL(TT)
Input
Return
B
Yes
No
Yes
Von < Von(CL2)
Current limitation
No
Thermal
td(CL) unexpired
No
A
Yes
dTch > dTth
Yes
Thermal
IL > IL(lim)
B
No
No
Yes
Shutdown
IL(lim)=IL(CL)
Input
Input
Over current
C
No
Yes
IN = Low
No
Yes
Input
C
Return
Shutting down?
No
Yes
IL > IL(NL)
Yes
IN = Low
Yes
Von=Von(NL)
No
Turn-on
B
No
Return
Before dTth detection after turn on
C
Turn-off
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During shutdowning by dTth
d t ti
Exit from thermal protection control
Page 21 of 39
µPD166034T1U Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
IL(lim)=IL(TT)
Input
Return
B
Yes
No
Yes
Von < Von(CL2)
Current limitation
No
Thermal
td(CL) unexpired
No
A
Yes
dTch > dTth
Yes
Thermal
IL > IL(lim)
B
No
No
Yes
Shutdown
IL(lim)=IL(CL)
Input
Input
Over current
C
No
Yes
IN = Low
No
Yes
Input
C
Return
Shutting down?
No
Yes
IL > IL(NL)
Yes
IN = Low
Yes
Von=Von(NL)
No
Turn-on
B
No
Return
Before aTth detection after turn on
C
Turn-off
R07DS1168EJ0200 Rev.2.00
May 22, 2015
During shutdowning by aTth
d t ti
Exit from thermal protection control
Page 22 of 39
µPD166034T1U Datasheet
3. Specification
3.6.6 Device behavior at small load current conduction
The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction.
Von (VCC-OUT) is proportionate to IL under normal conditions. Under IL<IL(NL) condition, Ron is controlled to
increase to be Von=Von(NL)=30mV(typ).
Von
Von(NL)
IL(NL)
R07DS1168EJ0200 Rev.2.00
May 22, 2015
IL
Page 23 of 39
µPD166034T1U Datasheet
3. Specification
3.6.7 Diagnostic signal
Truth table
SEN
Normal Operation
H
Shutdown by over
current detection
Input
H
L
H
L
H
Power limitation
L
H
Thermal toggling
Short circuit to VCC
Open Load
X 8)
L
L
H
L
H
L
X 8)
Output
VCC
L 1)
L 1)
L 1)
VOUT 6)
L 1)
L 1)
VOUT 6)
L 1)
L 1)
VCC
VOUT 7)
VCC
VOUT 7)
X 8)
Diagnostic output 2)
IIS = IL/KILIS
< 1µA (Iis,dis)
Iis,fault 3)
< 1µA (Iis,dis)
IIS = IL/KILIS in case of Von<Von(CL1)
Iis,fault 4) in case of Von>Von(CL1)
Iis,fault 4)
< 1µA (Iis,dis)
IIS = IL/KILIS in case of Von<Von(CL1)
Iis,fault 5) in case of Von>Von(CL1)
Iis, fault 5)
< 1µA (Iis,dis)
< 2µA (Iis,offset)
Iis,fault in case of VOUT>VOUT(OL)
< 2µA (Iis,offset)
Iis,fault in case of VOUT>VOUT(OL)
< 1µA (Iis,dis)
1) In case of OUT terminal is connected to GND via load.
2) In case of IS terminal is connected to GND via resister.
3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection.
4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1).
5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1)..
6) VOUT depends on the short circuit condition
7) VOUT depends on the ratio of VCC-OUT-GND resistive component.
8) Don’t care
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Page 24 of 39
µPD166034T1U Datasheet
3. Specification
Current sense output
The device output analog feedback current proportional to output current from IS pin. In the case of much higher
current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load
current, current sense output is above 5µA if output current is above IL(CSE) max, current sense output is below 2µA,
IIS,offset max, if output current is below IL(CSE) min.
IIS
IIS
KILIS=IL/IIS
5µA
2µA
IL
IIS,offset
IL
IL(CSE)
Sense current under fault condition
The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection,
during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kΩ condition. IIS,fault is
attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For
example, In the case of RIS=1kΩ, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V
to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kΩ, Operation point as IIS,fault is lower than specified value
but VIS should be higher than RIS=1kΩ condition.
IIS,fault
1kΩ load line
VCC
9mA
VCC-VIS
VCC
IS
3.5mA
GND
VIS
VCC-VIS
VIS
RIS
VCC-VIS
VCC
R07DS1168EJ0200 Rev.2.00
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Page 25 of 39
µPD166034T1U Datasheet
3. Specification
Sense current settling time
VIN
VSEN
VOUT
tsis(on)
tssen(off) tssen(on)
tsis(LC)
tsis(LC)
tsis(off)
IIS
Fault signal delay time at over current detection
VIN
VSEN
Over current detection
VOUT
Iis,fault
IIS
tdsc(fault)
R07DS1168EJ0200 Rev.2.00
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Page 26 of 39
µPD166034T1U Datasheet
3. Specification
Fault signal delay time at power limitation
VIN
VSEN
Short circuit appear
Short circuit disappear
Power limitation
VOUT
tdpl(fault)
IIS
tdpl(off)
Iis,fault
Fault signal delay time at Thermal toggling
VIN
VSEN
Short circuit appear
Power
limitation
VOUT
Short circuit disappear
Thermal toggling
tdpl(fault)
tdpl(off)
Iis,fault
IIS
tsis(off)
R07DS1168EJ0200 Rev.2.00
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Page 27 of 39
µPD166034T1U Datasheet
3. Specification
Fault signal delay time at open load detection
VIN
VSEN
Open load condition appear
Open load detection
Open load detection
VOUT
Iis,fault
tdop
IIS
tdop(fault)
Iis,dis
Iis,offset
3.6.8 Nominal load
Product
NHS008A
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Nominal load
1.5Ω
Page 28 of 39
µPD166034T1U Datasheet
3. Specification
3.6.9 Driving Capability
Driving Capability is specified as load impedance. Over current detection characteristics is designed above Driving
Capability characteristics. If estimated load impedance which comes from peak inrush current is lower than Driving
Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown
the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load
impedance which comes from peak inrush current is lower than Driving Capability characteristics, Power limitation
disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving
Capability characteristics.
IL [A]
VIN
IL(SC) specified point
NHS008A: 80A
t
128
IL(SC) characteristics
5
13.5
IL
Von [V]
t
Driving Capability:
30ms
NHS008A:115mΩ
3.6.10 Cross current protection in case of H-bridge high side usage
In case of using High side driver in H-bridge circuit,
Vbat
High side driver protects High side driver itself
and also low side driver from high power dissipation
by cross current when low side driver switching on.
VCC
OFF
VCC
IN
OUT
Cross
current
PWM ON
R07DS1168EJ0200 Rev.2.00
May 22, 2015
ON
IN
OUT
M
Motor
current
OFF
Page 29 of 39
µPD166034T1U Datasheet
3. Specification
3.6.11 Reverse Battery Protection by turn on the output
In case of a reverse battery is applied to the device, the N-ch MOSFET will turn on only if reverse current flow from
GND pin. The reverse current through the N-ch MOSFET has to be limited by the connected load. IGND(rev) is limited
internally approx. 2mA even without external RGND. Reverse current flow from IN, SEN, IS should be limited by
external component such as recommendation value in Pin function, refer 3.2 Pin configuration.
IN
RIN
VCC
SEN
RSEN
N-ch MOSFET
OUT
uC
IPD
GND
IS
IGND(rev)
IL(rev)
RGND
RIS
RL
3.6.12 Measurement condition
Switching waveform of OUT terminal
VIN
ton
toff
td(on)
td(off)
90%
70%
VOUT
dV/dton
30%
10%
R07DS1168EJ0200 Rev.2.00
May 22, 2015
90%
70%
-dV/dtoff
30%
10%
Page 30 of 39
µPD166034T1U Datasheet
3. Specification
3.7 Package drawing
R07DS1168EJ0200 Rev.2.00
May 22, 2015
Page 31 of 39
µPD166034T1U Datasheet
3. Specification
3.8 Taping information
3.9 Marking information
66034
R07DS1168EJ0200 Rev.2.00
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Page 32 of 39
µPD166034T1U Datasheet
4. Typical characteristics
4. Typical characteristics
R07DS1168EJ0200 Rev.2.00
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µPD166034T1U Datasheet
4. Typical characteristics
R07DS1168EJ0200 Rev.2.00
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µPD166034T1U Datasheet
4. Typical characteristics
R07DS1168EJ0200 Rev.2.00
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µPD166034T1U Datasheet
4. Typical characteristics
R07DS1168EJ0200 Rev.2.00
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µPD166034T1U Datasheet
4. Typical characteristics
R07DS1168EJ0200 Rev.2.00
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Page 37 of 39
µPD166034T1U Datasheet
5. Thermal characteristics
5. Thermal characteristics
R07DS1168EJ0200 Rev.2.00
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Page 38 of 39
µPD166034T1U Datasheet
6. Application example in principle
6. Application example in principle
RIN, RSEN, RAN values are in range of 2k to 50kΩ depending microcontroller while R_L value is typically 4kΩ.
If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s
value is typically 100kΩ
GND Network recommendation
In case of V_loaddump < 35V
In case of 35V < V_loaddump < 42V
Vbat
Vbat
VCC
VCC
GND
GND
RGND
No external component is required.
R07DS1168EJ0200 Rev.2.00
May 22, 2015
External resistor is recommended in order to
limit the current through ZDAZ at load dump
condition. 100Ω is recommended as RGND.
Page 39 of 39
Revision History
Rev.
1.00
2.00
Date
Mar 27, 2014
May 22, 2015
µPD166034T1U Datasheet
Page
1-38
23
Description
Summary
1st issue
"Device behavior at small load current conduction" is added.
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