Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5693 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU5693 is suitable for DC/DC converter and general purpose applications. S2 5 6 S1/D2 1 FET1 VDS = 30V ID = 52A RDS(ON) < 5.0mΩ < 8.5mΩ 100% UIL Tested 100% Rg Tested FET2 VDS = 30V ID = 100A @VGS = 10V < 2.5mΩ @VGS = 10V < 3.2mΩ @VGS = 4.5V S2 S2 7 G2 8 4 D1 3 D1 2 1 D1 G1 2 3 4 Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Drain-Source Voltage FET2 VDSS Gate-Source Voltage Continuous Drain Current FET1 30 VGSS (1) ±20 ±12 70 135 TC=25oC (Package Limited) 52 100 TC=70 C 57 108 TA=25oC ID 15.3 25 TA=70oC 12.4 20 Pulsed Drain Current IDM TC=25oC Power Dissipation V TC=25oC (Silicon Limited) o PD TA=25oC Single Pulse Avalanche Energy (2) 208 400 46.3 73 2.2 2.5 EAS Junction and Storage Temperature Range Unit 43 TJ, Tstg V A A W 72 mJ o -55~150 C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jan. 2015 Ver. 1.0 FET1 Typ. Max FET2 Typ. Max RθJA 47.5 57 41.7 50 RθJC 2.2 2.7 1.3 1.7 Symbol 1 Unit o C/W MagnaChip Semiconductor Ltd. MDU5693 - Dual N-Channel Trench MOSFET 30V MDU5693 Part Number Temp. Range Package Packing RoHS Status MDU5693VRH -55~150oC Dual PDFN56 Tape & Reel Halogen Free FET1 Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.8 3.0 Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 - 4.1 5.0 VGS = 10V, ID = 20A Drain-Source ON Resistance Forward Transconductance o RDS(ON) gfs - 5.6 6.8 VGS = 4.5V, ID = 20A TJ=125 C - 6.7 8.5 VDS = 5V, ID = 20A - 91 - 14 20 27 6.2 9 12 - 6 - - 1.9 - 1040 1500 1950 V μA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 20A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz nC Output Capacitance Coss 418 610 790 Reverse Transfer Capacitance Crss 28 42 55 Turn-On Delay Time td(on) - 10.5 - - 11.3 - - 28.5 - - 5.1 - 0.5 1.0 2.0 Ω - 0.7 1.0 V - 30.5 ns - 42.9 nC Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS=15V, ID=20A, Rg=3.0Ω tf Rg f=1 MHz Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr pF ns Drain-Source Body Diode Characteristics IF = 20A, dl/dt = 200A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited. 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 20 A, VDD = 27V, VGS = 10V. Jan. 2015 Ver. 1.0 2 MagnaChip Semiconductor Ltd. MDU5693 - Dual N-Channel Trench MOSFET 30V Ordering Information Drain-Source On-Resistance [mΩ] 40 ID, Drain Current [A] VGS = 10V 8.0V 6.0V 30 4.0V 4.5V 20 3.0V 10 8 VGS = 4.5V 6 VGS = 10V 4 2 2.5V 0 0.0 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50 ID, Drain Current [A] VDS, Drain-Source Voltage [V] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 100 1. VGS = 10 V 2. ID = 20 A 1.6 ※ Notes : ID = 20A RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance ※ Notes : 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 80 60 40 20 150 0 o TJ, Junction Temperature [ C] 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 30 Temperature : Area※ Notes V = 5V ※ Notes : VGS = 0V DS IDR, Reverse Drain Current [A] ID, Drain Current [A] 25 20 15 10 1 10 0 10 5 -1 10 0 0 2 4 6 8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics Jan. 2015 Ver. 1.0 0.0 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU5693 - Dual N-Channel Trench MOSFET 30V 10 50 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 20A VDS = 15V VGS, Gate-Source Voltage [V] 8 1500 Capacitance [F] Ciss 6 4 1000 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 500 Coss 2 Crss 0 0 5 10 15 0 20 0 5 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 15 20 25 30 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 3 ID, Drain Current [A] 80 10 2 10 1 60 100 ms DC 10 10 1s 10s Operation in This Area is Limited by R DS(on) 0 ID, Drain Current [A] 10 ms Limited by Package 40 20 -1 Single Pulse TJ=Max Rated TC=25 ℃ 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 0 10 D=0.5 0.2 0.1 0.05 -1 10 0.02 0.01 Zθ JC (t), Thermal Response 10 -2 ※ Notes : 10 Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jan. 2015 Ver. 1.0 4 MagnaChip Semiconductor Ltd. MDU5693 - Dual N-Channel Trench MOSFET 30V 2000 10 Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 10mA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.1 1.4 2.2 Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = ±12V, VDS = 0V - - ±0.1 - 1.8 2.5 - 2.3 3.2 VGS = 4.5V, ID = 20A - 2.4 3.2 VDS = 5V, ID = 20A - 85 - VGS = 10V, ID = 20A Drain-Source ON Resistance Forward Transconductance o RDS(ON) gfs TJ=125 C V μA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) 32.8 46.8 65 Total Gate Charge Qg(4.5V) 14.2 20.6 28.8 - 6.8 - Gate-Source Charge Qgs VDS = 15.0V, ID = 20A, VGS = 10V Gate-Drain Charge Qgd - 3.9 - Input Capacitance Ciss 2189 3150 4093 Output Capacitance Coss 690 1010 1300 VDS = 15.0V, VGS = 0V, f = 1.0MHz nC pF Reverse Transfer Capacitance Crss 48 71 92 Turn-On Delay Time td(on) - 11.3 - - 12 - - 57.4 - - 7.08 - 0.5 1.0 2.0 Ω - 0.6 1.0 V - 38 - ns - 64.4 - nC Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V VDD=15V, ID=20A, Rg=3Ω tf Rg f=1 MHz Source-Drain Diode Forward Voltage VSD IS = 1.0A, VGS = 0V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr ns Drain-Source Body Diode Characteristics IF = 20A, dl/dt = 200A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited. 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 25 A, VDD = 27V, VGS = 10V.. Jan. 2015 Ver. 1.0 5 MagnaChip Semiconductor Ltd. MDU5693 - Dual N-Channel Trench MOSFET 30V FET2 Electrical Characteristics (Ta =25oC) Drain-Source On-Resistance [mΩ] 80 ID, Drain Current [A] 3.0 VGS = 10V 6.0V 4.5V 3.0V 2.5V 2.0V 60 40 1.5V 20 2.8 2.6 VGS = 4.5V 2.4 2.2 2.0 VGS = 10V 1.8 1.6 1.4 1.2 1.0 0 0.0 0.2 0.4 0.6 0.8 0 1.0 10 20 30 40 50 ID, Drain Current [A] VDS, Drain-Source Voltage [V] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 50 ※ Notes : 1. VGS = 10 V 2. ID = 20 A 1.6 ID = 20.0A RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance ※ Notes : 1.4 1.2 1.0 40 30 20 10 0.8 0 0.6 -50 -25 0 25 50 75 100 125 2 150 3 4 Fig.3 On-Resistance Variation with Temperature 6 7 8 9 10 Fig.4 On-Resistance Variation with Gate to Source Voltage 25 10 ※ Notes : ※ Notes : VGS = 0V VDS = 5V IDR, Reverse Drain Current [A] 20 ID, Drain Current [A] 5 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] 15 10 5 0 0 1 2 0.1 0.0 3 VGS, Gate-Source Voltage [V] 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Jan. 2015 Ver. 1.0 1 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 6 MagnaChip Semiconductor Ltd. MDU5693 - Dual N-Channel Trench MOSFET 30V 100 5000 ※ Note : ID = 20A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 15V 4000 Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 Ciss 3000 2000 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 2 1000 0 0 Crss 0 10 20 30 40 0 50 5 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 3 10 2 15 20 25 30 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 160 140 120 ID, Drain Current [A] ID, Drain Current [A] 1 ms 10 ms 10 DC Operation in This Area is Limited by R DS(on) 1 100 ms 1s 10 s 10 0 100 Limited by Package 80 60 40 Single Pulse TJ=Max Rated TC=25 20 ℃ 10 -1 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 0 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 Zθ JC (t), Thermal Response 10 0.01 -2 ※ Notes : 10 Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jan. 2015 Ver. 1.0 7 MagnaChip Semiconductor Ltd. MDU5693 - Dual N-Channel Trench MOSFET 30V 10 MDU5693 - Dual N-Channel Trench MOSFET 30V Package Dimension Dual PDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Jan. 2015 Ver. 1.0 8 MagnaChip Semiconductor Ltd. MDU5693 - Dual N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jan. 2015 Ver. 1.0 9 MagnaChip Semiconductor Ltd.