IRF IRK2F200-12HK Magn-a-pakâ ¢ power module Datasheet

Bulletin I27099 rev. C 03/01
IRK.F200.. SERIES
MAGN-A-pak
 Power Modules
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
200 A
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V RMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of MAGN-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
IRK.F200..
Units
200
A
85
°C
444
A
@ 50Hz
7600
A
@ 60Hz
8000
A
@ 50Hz
290
KA 2s
@ 60Hz
265
KA 2s
2900
KA 2√s
tq
20 and 25
µs
t rr
2
µs
IT(AV)
@ TC
IT(RMS)
ITSM
2
I t
I2√t
VDRM / VRRM
up to 1200
V
TJ
- 40 to 125
o
range
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C
1
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IRK.F200-
Voltage
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/I DRM max.
Code
peak reverse voltage
repetitive peak rev. voltage
@ T J = 125°C
V
V
mA
08
800
800
12
1200
1200
50
Current Carrying Capacity
ITM
ITM
Frequency f
o
180 el
ITM
Units
100µs
180 el
o
50Hz
380
560
630
850
2460
3180
A
400Hz
460
690
710
1060
1570
2080
A
2500Hz
310
450
530
760
630
860
A
5000Hz
250
360
410
560
410
560
A
10000Hz
180
280
300
410
-
-
A
50
50
50
50
50
Recovery voltage Vr
50
Voltage before turn-on Vd
80%VDRM
80%VDRM
V
80%VDRM
V
Rise of on-state current di/dt
50
50
-
-
-
-
A/µs
Case temperature
85
60
85
60
85
60
°C
Equivalent values for RC circuit
10Ω/0.47µF
10Ω/0.47µF
10Ω/0.47µF
On-state Conduction
Parameter
IT(AV)
IRK.F200..
Units Conditions
Maximum average on-state current
200
A
@ Case temperature
85
°C
180° conduction, half sine wave
IT(RMS)
Maximum RMS current
444
A
as AC switch
ITSM
Maximum peak, one-cycle,
7600
A
t = 10ms
No voltage
non-repetitive surge current
8000
t = 8.3ms
reapplied
6400
t = 10ms
100% VRRM
6700
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = 125°C
265
t = 8.3ms
reapplied
205
t = 10ms
100% VRRM
187
t = 8.3ms
reapplied
I2t
I2 √t
Maximum I2 t for fusing
Maximum I2 √t for fusing
290
2900
KA2 s
KA2√s t = 0 to 10ms, no voltage reapplied
1.18
VT(TO)2 High level value of threshold voltage
1.25
r t1
Low level value of on-state slope resistance
0.74
r t2
High level value of on-state slope resistance
0.70
VTM
Maximum on-state voltage drop
1.73
V
IH
Maximum holding current
600
mA
TJ = 25°C, IT > 30 A
IL
Typical latching current
1000
mA
TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
2
V
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
VT(TO)1 Low level value of threshold voltage
(I > π x IT(AV) ), TJ = TJ max.
mW
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
(I > π x IT(AV) ), TJ = TJ max.
Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
Switching
Parameter
di/dt
IRK.F200..
Maximum non-repetitive rate of rise
800
Units Conditions
A/µs
Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
T J = 25°C
trr
Maximum recovery time
tq
Maximum turn-off time
2
µs
K
J
20
25
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 750A, T J = 125°C, di/dt = -25A/µs,
µs
VR = 50V, dv/dt = 400V/µs linear to 80% V DRM
Blocking
Parameter
dv/dt
IRK.F200..
Maximum critical rate of rise of off-state
1000
Units Conditions
V/µs
TJ = 125°C., exponential to = 67% VDRM
3000
V
50 Hz, circuit to base, TJ = 25°C, t = 1 s
50
mA
voltage
VINS
RMS isolation voltage
IRRM
Maximum peak reverse and off-state
IDRM
leakage current
TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
IRK.F200..
Units Conditions
P GM
Maximum peak gate power
60
W
f = 50 Hz, d% = 50
P G(AV)
Maximum peak average gate power
10
W
TJ = 125°C, f = 50Hz, d% = 50
IGM
Maximum peak positive gate current
10
A
TJ = 125°C, tp < 5ms
- VGM
Maximum peak negative gate voltage
5
V
IGT
Max. DC gate current required to trigger
200
mA
V GT
DC gate voltage required to trigger
3
V
IGD
DC gate current not to trigger
20
mA
V GD
DC gate voltage not to trigger
0.25
V
TJ = 25°C, Vak 12V, Ra = 6
TJ = 125°C, rated VDRM applied
Thermal and Mechanical Specifications
Parameter
IRK.F200..
TJ
Max. junction operating temperature range
- 40 to 125
T stg
Max. storage temperature range
- 40 to 150
R thJC
Max. thermal resistance, junction to
Units Conditions
°C
0.125
K/W
Per junction, DC operation
0.025
K/W
Mounting surface flat and greased
case
R thC-hs Max. thermal resistance, case to
heatsink
Per module
T
Mounting torque ± 10% MAP to heatsink
wt
Approximate weight
busbar to MAP
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4 - 6 (35 - 53)
4 - 6 (35 - 53)
500 (17.8)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
(lb*in) for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
g (oz) lubricated with a compound
Nm
3
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction
180°
0.009
Units
Conditions
K/W
T J = 125°C
0.006
120°
0.010
0.011
90°
0.014
0.015
60°
0.020
0.020
30°
0.032
0.033
Ordering Information Table
Device Code
IRK
T
F
200
1
2
3
4
-
12
H
K
5
6
7
1
- Module type
2
- Circuit configuration
3
- Fast SCR
4
- Current rating: IT(AV) x 10 rounded
5
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
6
- dv/dt code: H ≤ 400V/µs
7
- tq code: K ≤ 20µs
J ≤ 25µs
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
M ax im um Allo w ab le C a se Tem p erature ( C )
130
IRKLF..
IRKUF..
IR K.F200.. Series
R thJC (D C ) = 0.12 5 K/W
120
110
C o nd uc tio n A ng le
100
90
30
60
80
90
70
120
180
60
0
40
80
120
160
200
240
A vera ge O n-sta te C urrent (A )
Fig. 1 - Current Ratings Characteristics
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IRKVF..
M a xim um A llo w ab le C ase Te m pe rature ( C )
IRKHF..
IRKTF..
IRKKF..
130
IRKNF..
IR K .F2 00.. Serie s
R thJC (D C ) = 0.12 5 K/W
120
110
C o nd uctio n P erio d
100
90
30
80
60
90
70
12 0
180
DC
60
0
50
100
150
200
250
300
350
A verag e On -state C urren t (A)
Fig. 2 - Current Ratings Characteristics
5
IRK.F200.. Series
180
120
90
60
30
300
250
200
RM S Lim it
150
C o n d u ction A n g le
100
IRK.F20 0.. Series
Per Ju nction
T J = 1 25 C
50
0
0
40
80
120
160
200
M axim um Av e ra ge On -state P ow er Lo ss (W )
350
500
DC
180
120
90
60
30
450
400
350
300
250
200 RM S Lim it
C o nd uctio n P erio d
150
IR K.F2 00.. Series
Per Ju nction
T J = 1 25 C
100
50
0
0
50
200
250
300
350
Avera ge O n-sta te C urre nt (A)
Fig. 4 - On-state Power Loss Characteristics
7000
At Any Ra ted Loa d C ond ition And W ith
Ra ted VRR M Ap plied Follow ing Surge.
In itia l T J = 125 C
@ 60 Hz 0.008 3 s
@ 50 Hz 0.010 0 s
6000
5000
4000
IRK.F20 0.. Series
Pe r Jun ctio n
3000
10
100
8000
M a xim um N on Rep etitiv e Surge C urrent
V ersus Pulse Tra in D ura tio n. Co ntro l
O f C o nduction May Not Be Maintained.
In itial TJ = 125 C
No V o lta ge Re a p p lie d
Ra te d V RR M R e a pp lie d
7000
6000
5000
4000
IRK.F200.. Series
Pe r Jun ctio n
3000
0.01
Nu m b er O f E qu a l Am plitu d e Half C yc le C u rre nt Pu lse s (N)
1000
T J= 25 C
T J = 12 5 C
IR K.F200 .. Series
P er Jun c tio n
100
1
2
3
4
5
6
7
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Tran sient The rm al Im pedance Z thJC (K/W )
10000
0.1
Pu ls e Train D uration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantan e ous O n -state C urre nt (A)
150
Fig. 3 - On-state Power Loss Characteristics
1
6
100
A vera ge O n -sta te C urre n t (A)
Peak H alf Sine W ave O n -sta te Curren t (A)
Pea k H alf Sine W a ve O n-sta te C ur ren t (A)
M a xim um Ave rag e O n-st at e P ow er Lo ss (W )
Bulletin I27099 rev. C 03/01
1
Steady State Valu e:
R thJC = 0.1 25 K/W
(D C O pera tio n)
0.1
0.01
IR K.F200.. Series
Per Jun ctio n
0.001
0.001
0.01
0.1
1
10
100
In sta n ta n e o us O n -sta te V o lta g e (V )
Square W a ve Pulse D uration (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
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IRK.F200.. Series
320
M axim um Re verse Re c overy C urre n t - Irr (A )
M a xim u m Re verse Rec ove ry C ha rg e - Q rr ( C )
Bulletin I27099 rev. C 03/01
I TM = 1000 A
500 A
300 A
200 A
100 A
300
280
260
240
220
200
180
160
140
120
IRK .F200.. Serie s
T J = 125 C
100
80
10
20
30
40
50
60
70
80
90 100
180
I TM = 1 000A
5 00A
3 00A
2 00A
1 00A
150
120
90
60
IRK.F200.. Se ries
T J = 125 C
30
10
20
30
40
50
60
70
80
90 100
Ra te O f Fall O f Fo rw ard C urre nt - d i/dt (A / s)
Rate O f Fa ll O f Forw ard C urren t - d i/dt (A / s)
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Peak O n-stata C urrent (A)
1E4
50 H z
1 50
50 H z
40 0
150
1 00 0
1E3
40 0
2 50 0
1 00 0
5 00 0
2 50 0
5000
1E2
tp
Snub b er c ircuit
R s = 10 o hm s
C s = 0.47 F
V D = 80% V D R M
IRK.F200.. Series
Sinuso id a l p ulse
T C = 85 C
1E1
1E1
1E2
1E3
tp
Snub b er circuit
R s = 10 ohm s
C s = 0.47 F
V D = 80% V D R M
IRK .F200.. Series
Sinuso id a l p ulse
T C = 60 C
1E4 E1
1E4
1E1
1E2
Pulse Base w idth ( s)
1E3
1E4
Pu lse Base w id th ( s)
Fig. 11 - Frequency Characteristics
Pea k O n -state C urren t (A )
1E4
tp
IRK.F200.. Series
Tra p ezo id a l p ulse
T C= 85 C d i/d t 5 0A/ s
tp
IRK .F2 00.. Se rie s
Tra p ezoid a l p ulse
T C= 85 C d i/d t 100A/ s
50 H z
50 H z
150
150
40 0
1E3
400
1 00 0
1 00 0
2 50 0
2 50 0
5 00 0
Snub b er circuit
R s = 10 ohm s
C s = 0.47 F
V D = 80% V D R M
1E2
1E1
1E2
1E3
5000
1E4 E1
1E4
1E1
Pulse Base w idth ( s)
Snub b e r circ uit
R s = 10 ohm s
C s = 0.47 F
V D = 80% V D R M
1E2
1E3
1E4
Pu lse Base w idth ( s)
Fig. 12 - Frequency Characteristics
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7
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
Pea k O n -state C urren t (A )
1E4
50 H z
50 H z
150
150
40 0
400
1E3
1 00 0
1000
2 50 0
2 50 0
5 00 0
tp
5000
Snub b e r circ uit
R s = 10 ohm s
C s = 0.47 F
V D = 80% V D R M
IRK.F 200.. Series
Tra p ezoid a l p ulse
T C= 60 C d i/d t 50A/ s
1E2
1E1
1E2
tp
1E1
1E4 E1
1E4
1E3
Snub b e r c irc uit
R s = 10 ohm s
C s = 0.4 7 F
V D = 80% V D R M
IRK .F200.. Series
Tra pezo id a l p ulse
T C= 60 C di/d t 100A/ s
1E2
Pulse Base w idth ( s)
1E3
1E4
Pulse Base w idth ( s)
Fig. 13 - Frequency Characteristics
1E4
10 jou les per p u lse
10 jou les p er p ulse
5
2 .5
2 .5
1
0 .5
1E3
1
0 .2 5
0 .5
0 .2 5
0 .1
0 .1
0 .0 5
0 .05
1E2
tp
IRK .F200.. Se ries
S inusoid a l p ulse
1E1
1E1
1E2
tp
IRK .F200.. Series
Tra p ezoid a l p ulse
d i/d t 50A / s
1E1
1E4
1E4 E1
1E3
1E2
1E3
1E4
Pulse Base w idth ( s)
Pulse Base w id th ( s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
R ectan g u la r g a te pu lse
a ) Reco m m en d ed lo a d lin e fo r
ra ted d i/d t : 1 0V , 10 o h m s
b ) R eco m m end ed lo a d lin e fo r
< = 30% ra ted d i/d t : 1 0V , 20 o h m s
(1)
(2)
(3)
(4)
PG M
PG M
PG M
PG M
=
=
=
=
8W , tp = 25m s
20W , tp = 1m s
40W , tp = 5m s
80W , tp = 2.5m s
(a )
Tj=25 C
1
T j=- 40 C
(b )
Tj=125 C
Instantane ous G ate V oltage (V)
Pea k O n -state C urre n t (A )
5
(1)
(2)
(3 )
(4)
VG D
IG D
0.1
0.01
IRK.F200.. Series
0.1
Frequenc y Lim ite d by PG (AV )
1
10
100
In sta n ta n eo u s G ate C u rrent (A )
Fig. 15 - Gate Characteristics
8
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