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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MOC3071M, MOC3072M 6-Pin DIP Random-Phase Triac Driver Optocoupler (800 Volt Peak) The MOC3071M and MOC3072M consist of a GaAs infrared emitting diode optically coupled to a non-zero- crossing silicon bilateral AC switch (triac). These devices isolate low voltage logic from 240 VAC lines to provide random phase control of high current triacs or thyristors. These devices feature greatly enhanced static dv/dt capability to ensure stable switching performance of inductive loads. www.onsemi.com Features Excellent IFT Stability—IR Emitting Diode Has Low Degradation 800 V Peak Blocking Voltage Safety and Regulatory Approvals – UL1577, 4,170 VACRMS for 1 Minute – DIN EN/IEC60747-5-5 (pending approval) MDIP 6L WHITE MARKING DIAGRAM Typical Applications Solenoid/Valve Controls Lamp Ballasts Static AC Power Switch Interfacing Microprocessors to 240 VAC Peripherals Solid State Relay Incandescent Lamp Dimmers Temperature Controls Motor Controls 1. F 2. MOC3071 3. V 4. X 5. YY 6. Q = Fairchild Logo =Specific Device Code =DIN EN/IEC60747-5-5 Option =One-Digit Year Code =Two-Digit Work Week =Assembly Package Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2016 November 2016 - Rev. 1 1 Publication Order Number: MOC3071M/D MOC3071M, MOC3072M SAFETY AND INSULATIONS RATINGS As per DIN EN/IEC 60747-5-5 (pending approval), this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 40/85/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol VPR 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC Parameter 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak 850 Vpeak 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm Insulation Resistance at TS, VIO = 500 V > 109 Ω VIORM Maximum Working Insulation Voltage VIOTM Highest Allowable Over-Voltage DTI RIO www.onsemi.com 2 MOC3071M, MOC3072M MAXIMUM RATINGS (Note 1) TA = 25°C unless otherwise specified. Symbol Parameters Value Unit -40 to +150 °C Total Device TSTG Storage Temperature TOPR Operating Temperature -40 to +85 °C Junction Temperature Range -40 to +100 °C 260 for 10 seconds °C TJ TSOL Lead Solder Temperature Total Device Power Dissipation at 25°C Ambient 330 mW Derate Above 25°C 4.4 mW/°C IF Continuous Forward Current 60 mA VR Reverse Voltage PD Emitter 3 V Total Power Dissipation at 25°C Ambient 100 mW Derate Above 25°C 1.33 mW/°C VDRM Off-State Output Terminal Voltage 800 V ITSM Peak Non-Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) 1 A 300 mW PD Detector Total Power Dissipation at 25°C Ambient PD 1. Derate Above 25°C 4 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 MOC3071M, MOC3072M ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameters Test Conditions Min. Typ. Max. Unit EMITTER VF Input Forward Voltage IF = 10 mA 1.18 1.50 V IR Reverse Leakage Current VR = 3 V 0.05 100 µA IDRM Peak Blocking Current, Either Direction VDRM = 800 V, IF = 0 (Note 2) 10 200 nA VTM Peak On-State Voltage, Either Direction ITM = 100 mA peak, IF = 0 2.2 2.5 V dv/dt Critical Rate of Rise of Off-State Voltage IF = 0, VDRM = 800 V) DETECTOR 1000 V/µs TRANSFER CHARACTERISTICS Symbol DC Characteristics IFT LED Trigger Current, Either Direction IH Holding Current, Either Direction Test Conditions Main Terminal Voltage = 3 V (Note 3) Device Min. Typ. Max. MOC3071M 15 MOC3072M 10 Unit mA All 540 µA ISOLATION CHARACTERISTICS Symbol VISO Characteristic Test Conditions Input-Output Isolation Voltage (Note 4) f = 60 Hz, t = 1 Minute RISO Isolation Resistance VI-O = 500 VDC CISO Isolation Capacitance V = 0 V, f = 1 MHz Min. Typ. 4170 Max. Unit VACRMS 1011 0.2 Ω pF 2. Test voltage must be applied within dv/dt rating. 3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, the recommended operating IF lies between maximum IFT (15 mA for MOC3071M, 10 mA for MOC3072M) and absolute maximum IF (60 mA). 4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common. www.onsemi.com 4 MOC3071M, MOC3072M TYPICAL CHARACTERISTICS 400 ITM - ON-STATE CURRENT (mA) VF - FORWARD VOLTAGE (V) 1.7 1.6 1.5 1.4 1.3 TA = -40 °C 1.2 TA = 25 °C 1.1 TA = 100 °C 1.0 300 200 100 0 -100 -200 -300 -400 0.9 -3 1 10 -2 100 IF - LED FORWARD CURRENT (mA) 1.4 NORMALIZED TO TA = 25°C 1.2 1.0 0.8 -20 0 20 40 60 80 100 2 3 NORMALIZED TO PW = 100µs 10 5 0 1 10 100 PW - LED TRIGGER PULSE WIDTH (µs) Figure 3. LED Trigger Current vs. Ambient Temperature Figure 4. LED Trigger Current vs. LED Pulse Width 4 10000 NORMALIZED TO TA = 25°C IDRM - LEAKAGE CURRENT (nA) IH (NORMALIZED) = IH(TA) / IH(TA=25°C) 1 15 TA - AMBIENT TEMPERATURE (°C) 3 2 1 0 -40 0 Figure 2. On-State Characteristics IFT (NORMALIZED) = IFT(PW) / IFT(PW=100µs) IFT (NORMALIZED) = IFT(TA) / IFT(TA=25°C) Figure 1. LED Forward Voltage vs. Forward Current 0.6 -40 -1 VTM - ON-STATE VOLTAGE (V) -20 0 20 40 60 80 100 VDRM = 800 V 1000 100 10 1 0.1 -40 TA - AMBIENT TEMPERATURE (°C) -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) Figure 5. Holding Current vs. Ambient Temperature Figure 6. Leakage Current vs. Ambient Temperature www.onsemi.com 5 MOC3071M, MOC3072M APPLICATIONS INFORMATION Basic Triac Driver Circuit LED Trigger Current vs. Pulse Width The random phase triac drivers MOC3071M and MOC3072M can allow snubberless operations in applications where load is resistive and the external generated noise in the AC line is below its guaranteed dv/dt withstand capability. For these applications, a snubber circuit is not necessary when a noise insensitive power triac is used. Figure 7 shows the circuit diagram. The triac driver is directly connected to the triac main terminal 2 and a series resistor R which limits the current to the triac driver. Current limiting resistor R must have a minimum value which restricts the current into the driver to maximum 1 A. The power dissipation of this current limiting resistor and the triac driver is very small because the power triac carries the load current as soon as the current through driver and current limiting resistor reaches the trigger current of the power triac. The switching transition times for the driver is only one micro second and for power triacs typical four micro seconds. Random phase triac drivers are designed to be phase controllable. They may be triggered at any phase angle within the AC sine wave. Phase control may be accomplished by an AC line zero cross detector and a variable pulse delay generator which is synchronized to the zero cross detector. The same task can be accomplished by a microprocessor which is synchronized to the AC zero crossing. The phase controlled trigger current may be a very short pulse which saves energy delivered to the input LED. LED trigger pulse currents shorter than 100 µs must have increased amplitude as shown on Figure 4. This graph shows the dependency of the trigger current IFT versus the pulse width. IFT in this graph is normalized in respect to the minimum specified IFT for static condition, which is specified in the device characteristic. The normalized IFT has to be multiplied with the devices guaranteed static trigger current. Example: IFT = 10 mA, Trigger PW = 4 µs IF (pulsed) = 10 mA x 3 = 30 mA Triac Driver Circuit for Noisy Environments Minimum LED Off Time in Phase Control Applications When the transient rate of rise and amplitude are expected to exceed the power triacs and triac drivers maximum ratings a snubber circuit as shown in Figure 8 is recommended. Fast transients are slowed by the R-C snubber and excessive amplitudes are clipped by the Metal Oxide Varistor MOV. In phase control applications, one intends to be able to control each AC sine half wave from 0° to 180°. Turn on at 0° means full power and turn on at 180° means zero power. This is not quite possible in reality because triac driver and triac have a fixed turn on time when activated at zero degrees. At a phase control angle close to 180°the driver’s turn on pulse at the trailing edge of the AC sine wave must be limited to end 200 µs before AC zero cross as shown in Figure 10. This assures that the triac driver has time to switch off. Shorter times may cause loss of control at the following half cycle. Triac Driver Circuit for Extremely Noisy Environments As specified in the noise standards IEEE472 and IEC2554. Industrial control applications do specify a maximum transient noise dv/dt and peak voltage which is superimposed onto the AC line voltage. In order to pass this environment noise test a modified snubber network as shown in Figure 9 is recommended. Static dv/dt LED Trigger Current versus Temperature Recommended operating LED control current IF lies between the guaranteed IFT and absolute maximum IF. Figure 3 shows the increase of the trigger current when the device is expected to operate at an ambient temperature below 25°C. Multiply the datasheet guaranteed IFT with the normalized IFT shown on this graph and an allowance for LED degradation over time. Example: IFT = 10 mA, LED degradation factor = 20% IF at -40°C = 10 mA x 1.25 x 120% = 15 mA Critical rate of rise of off-state voltage or static dv/dt is a triac characteristic that rates its ability to prevent false triggering in the event of fast rising line voltage transients when it is in the off-state. When driving a discrete power triac, the triac driver optocoupler switches back to offstate once the power triac is triggered. However, during the commutation of the power triac in application where the load is inductive, both triacs are subjected to fast rising voltages. The static dv/dt rating of the triac driver optocoupler and the commutating dv/dt rating of the power triac must be taken into consideration in snubber circuit design to prevent false triggering and commutation failure. www.onsemi.com 6 MOC3071M, MOC3072M TRIAC DRIVER RLED VCC R POWER TRIAC AC LINE CONTROL Q LOAD RLED = (VCC – VFLED – VSATQ) / IFT R = VPAC / ITSM RET. Figure 7. Basic Driver Circuit TRIAC DRIVER RLED VCC R POWER TRIAC RS AC LINE MOV CS CONTROL Q LOAD Typical Snubber values RS = 33 W, CS = 0.01 µF MOV (Metal Oxide Varistor) protects power triac and driver from transient overvoltages > VDRM max RET. Figure 8. Triac Driver Circuit for Noisy Environments POWER TRIAC TRIAC DRIVER VCC R RLED RS MOV CONTROL AC LINE CS Q LOAD RET. Recommended snubber to pass IEEE472 and IEC255-4 noise tests RS = 47 W, CS = 0.01 µF Figure 9. Triac Driver Circuit for Extremely Noisy Environments 0° 180° AC Line LED PW LED Current LED turn off min. 200µs Figure 10. Minimum Time for LED Turn Off to Zero Crossing www.onsemi.com 7 MOC3071M, MOC3072M REFLOW PROFILE Profile Feature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60 seconds to 120 seconds Ramp-up Rate (TL to TP) 3°C/second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 seconds to 150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second maximum Time 25°C to Peak Temperature 8 minutes maximum Figure 11. Reflow Profile www.onsemi.com 8 MOC3071M, MOC3072M ORDERING INFORMATION (Note 5) Device Package Shipping MOC3071M DIP 6-Pin Tube (50 Units) MOC3071SM SMT 6-Pin (Lead Bend) Tube (50 Units) MOC3071SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) MOC3071VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option (pending approval) Tube (50 Units) MOC3071SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option (pending approval) Tube (50 Units) MOC3071SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option (pending approval) Tape and Reel (1000 Units) MOC3071TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option (pending approval) Tube (50 Units) 5. The product orderable part number system listed in this table also applies to the MOC3072M product families. www.onsemi.com 9 MOC3071M, MOC3072M PACKAGING DIMENSIONS 8.89 6 4 1 3 7.62 (TYP) 6.10-6.60 6.60 8.13-8.89 PIN 1 15.0° (TYP) 0.20-0.30 3.28-3.53 NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE. B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.38 (MIN) (0.86) 2.54-3.81 5.08 (MAX) 0.25-0.36 C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION D) DRAWING FILENAME AND REVSION: MKT-N06BREV4. 2.54 BSC 0.41-0.51 1.02-1.78 0.76-1.14 6 LEAD MDIP OPTO WHITE 0.3" WIDE www.onsemi.com 10 MOC3071M, MOC3072M (2.54) 6 4 1 3 (10.54) (1.52) (7.49) (1.78) 6.10-6.60 8.43-9.90 8.13-8.89 (0.76) PIN 1 LAND PATTERN RECOMMENDATION 5.08 (MAX) 3.28-3.53 0.25-0.36 2.49 1.89 0.38 (MIN) 0.20-0.30 2.54 (BSC) 0.16-0.88 (0.86) 0.41-0.50 (8.13) 1.02-1.78 0.76-1.14 NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION D) DRAWING FILENAME AND REVSION : MKT-N06CREV4. 6-LEAD MDIP OPTO WHITE SURFACE MOUNT FORM www.onsemi.com 11 MOC3071M, MOC3072M 8.13-8.89 4 6.10-6.60 6 0.20-0.30 PIN 1 1 10.16-10.80 3 2.54-3.81 3.28-3.53 5.08 (MAX) 0.25-0.36 NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION D) DRAWING FILENAME AND REVSION: MKT-N06Drev4 0.38 (MIN) (0.86) 0.41-0.51 1.02-1.78 2.54 BSC 0.76-1.14 6 LEAD MDIP OPTO WHITE 0.4" LEAD SPACING www.onsemi.com 12 MOC3071M, MOC3072M ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of i ts products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800-2829855 Toll Free USA/Canada. Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com