Digitron MAC228A-8 Silicon bidirectional thyristor Datasheet

DIGITRON SEMICONDUCTORS
MAC228(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, ½ sine wave, 50 to 60 Hz, gate open)
MAC228-2, MAC228A-2
MAC228-3, MAC228A-3
MAC228-4, MAC228A-4
MAC228-5, MAC228A-5
MAC228-6, MAC228A-6
MAC228-7, MAC228A-7
MAC228-8, MAC228A-8
MAC228-9, MAC228A-9
MAC228-10, MAC228A-10
Value
50
100
200
300
400
500
600
700
800
VDRM
RMS on-state current (TC = 80°C, full cycle sine wave 50 to 60Hz)
Unit
IT(RMS)
Volts
8
Amps
Peak non-repetitive surge current
(1 cycle, 60 Hz, TJ = 110°C)
ITSM
Circuit fusing considerations (t = 8.3ms)
I2t
26
A2s
Peak gate current (t ≤ 2µs)
IGM
±2.0
Amps
Peak gate voltage (t ≤ 2µs)
VGM
±10
Volts
Peak gate power (t ≤ 2µs)
Average gate power (TC = 80°C, t = 8.3ms)
Amps
80
PGM
20
Watts
PG(AV)
0.5
Watts
TJ
-40 to +110
°C
Tstg
-40 to +150
°C
8.0
In. lb.
Operating junction temperature range
Storage temperature range
Mounting torque
Note 1: VDRM or VRRM for all types can be applied on a continuous basis. Blocking voltage shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC
2.2
°C/W
Thermal resistance, junction to ambient
RӨJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Symbol
Min
Typ.
Max
Unit
Peak blocking current
(VD = Rated VDRM @ TJ = 25°C)
(VD = Rated VDRM @ TJ = 110°C)
IDRM
-
-
10
2
µA
mA
Peak on-state voltage
(ITM = 11A peak, pulse width ≤ 2 ms, duty cycle ≤ 2%)
VTM
-
-
1.8
Gate trigger current (continuous dc)
(VD = 12V, RL = 12Ω)
(MT2(+),G(+); (MT2(+),G(-); (MT2(-),G(-)
(MT2(-),G(+) “A” suffix only
IGT
-
-
5.0
10
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
(VD = Rated VDRM, RL = 10kΩ, TC = 110°C)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(MT2(-),G(+) “A” suffix only
VGT
-
-
2.0
2.5
0.2
0.2
-
-
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20130130
Volts
mA
Volts
DIGITRON SEMICONDUCTORS
MAC228(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Characteristic
Symbol
Holding current
(VD = 12V, gate open, ITM = 200mA)
IH
Gate controlled turn on time
(VD = Rated VDRM, ITM = 16A peak, IG = 30mA)
tgt
Critical rate of rise of off-state voltage
(VD = Rated VDRM, exponential waveform, TC = 110°C)
dv/dt
Critical rate of rise of commutation voltage
(VD = Rated VDRM, ITM = 11.3A, commutating di/dt = 4.1A/ms, gate unenergized,
TC = 80°C)
dv/dt(c)
Min
Typ.
Max
-
-
15
-
1.5
-
-
25
-
-
5
-
MECHANICAL CHARACTERISTIC
Case
TO-220AB
Marking
Body painted, alpha-numeric
Pin out
See below
TO-220AB
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.050
0.045
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
1.270
1.140
2.030
[email protected]
www.digitroncorp.com
Rev. 20130130
Unit
mA
µs
V/µs
V/µs
DIGITRON SEMICONDUCTORS
MAC228(A) SERIES
144 Market Street
Kenilworth NJ 07033 USA
SILICON BIDIRECTIONAL THYRISTORS
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20130130
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