Renesas BCR12FM-14LB 700v - 12a - triac medium power use Datasheet

Preliminary Datasheet
BCR12FM-14LB
R07DS1064EJ0100
Rev.1.00
Apr 10, 2013
700V - 12A - Triac
Medium Power Use
Features




 Insulated Type
 Planar Passivation Type
 Viso : 2000V
IT (RMS) : 12 A
VDRM : 800 V (Tj =125 °C)
Tj: 150 °C
IFGTI, IRGTI, IRGT III :30 mA
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Symbol
Voltage class
14
800
700
840
Repetitive peak off-state voltageNote1
VDRM
Non-repetitive peak off-state voltageNote1
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
12
Unit
A
Surge on-state current
ITSM
120
A
I2 t
60
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note5
R07DS1064EJ0100 Rev.1.00
Apr 10, 2013
Unit
Conditions
V
Tj=125C
Tj=150C
V
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 102C
50Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 50Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1  T2  G terminal to case
Page 1 of 7
BCR12FM-14LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.6
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 20 A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
3.3
—
—
V
V
C/W
V/s
V/s
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
Rth (j-c)
(dv/dt)c
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
Tj = 150C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –6.0 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS1064EJ0100 Rev.1.00
Apr 10, 2013
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR12FM-14LB
Preliminary
Performance Curves
Maximum On-State Characteristics
3
2
Tj = 150°C
101
7
5
3
2
100
7
5
0.5
Tj = 25°C
1.0
1.5
2
2.5
3.0
3.5
140
120
100
80
60
40
20
2 3 4 5 7 101
2 3 4 5 7 102
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
VGM = 10V
PGM = 5W
PG(AV) =
0.5W
IGM = 2A
100
7
5
3
2
IRGT I
IFGT I, IRGT III
VGD = 0.1V
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
160
On-State Voltage (V)
101
7
5
3 VGT = 1.5V
2
10–1
180
0
100
4.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
5
3
2
Gate Voltage (V)
Surge On-State Current (A)
200
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT I, IRGT III
IFGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS1064EJ0100 Rev.1.00
Apr 10, 2013
Transient Thermal Impedance (°C/W)
On-State Current (A)
102
7
5
Rated Surge On-State Current
102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR12FM-14LB
Preliminary
7
5
3
2
No Fins
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
14
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
0
4
6
8
10
12
14
16
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
140
140
Ambient Temperature (°C)
160
120
100 Curves apply regardless
of conduction angle
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
16
All fins are black painted
aluminum and greased
120 × 120 × t2.3
120
100
100 × 100 × t2.3
80
60 × 60 × t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
2
Conduction Time (Cycles at 60Hz)
160
160
Ambient Temperature (°C)
16
On-State Power Dissipation (W)
103
Maximum On-State Power Dissipation
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
R07DS1064EJ0100 Rev.1.00
Apr 10, 2013
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
105
7 Typical Example
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 7
BCR12FM-14LB
Preliminary
103
7
5
4
3
2
Latching Current (mA)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
T2+, G+
Typical Example
T2–, G–
100
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (t°C)
× 100 (%)
Breakover Voltage (25°C)
103
7
5
3
2
Junction Temperature (°C)
160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Latching Current vs.
Junction Temperature
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
140
Typical Example
Tj = 150°C
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
R07DS1064EJ0100 Rev.1.00
Apr 10, 2013
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
102
7
5
III Quadrant
3
2
101
7 Minimum
5 Characteristics
Value
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
100
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR12FM-14LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
102
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
3
2
III Quadrant
101
7
5 I Quadrant
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
3 Minimum
Characteristics
2 Value
100
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
V
R1
A
6V
330Ω
V
330Ω
Test Procedure II
Test Procedure I
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS1064EJ0100 Rev.1.00
Apr 10, 2013
Page 6 of 7
BCR12FM-14LB
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code
⎯
RENESAS Code
PRSS0003AG-A
Previous Code
⎯
MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
φ 3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
BCR12FM-14LB#BB0
BCR12FM-14LBA8#BB0
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Note : Please confirm the specification about the shipping in detail.
R07DS1064EJ0100 Rev.1.00
Apr 10, 2013
Page 7 of 7
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