CYSTEKEC HBNP54S6 General purpose npn / pnp epitaxial planar transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 1/9
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNP54S6
Features
• Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• Pb-free lead plating package.
Equivalent Circuit
Outline
SOT-363
HBNP54S6
Ordering Information
Device
HBNP54S6-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBNP54S6
CYStek Product Specification
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
TR2 (PNP)
180
160
6
600
Unit
-160
-160
-6
-600
200(total)
150
-55~+150
*1
V
V
V
mA
mW
°C
°C
Note: *1 150mW per element must not be exceeded.
Characteristics (Ta=25°C)
•Q1, TR1 (NPN)
Symbol
Min.
BVCBO
180
BVCEO
160
BVEBO
6
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
100
*hFE2
120
*hFE3
40
fT
100
Cob
-
Typ.
0.1
-
Max.
50
50
0.15
0.2
0.9
1.0
270
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=180V
VEB=6V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
HBNP54S6
CYStek Product Specification
CYStech Electronics Corp.
• Q2, TR2 (PNP)
Symbol
Min.
BVCBO
-160
BVCEO
-160
BVEBO
-6
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
90
*hFE2
120
*hFE3
40
fT
100
Cob
-
Typ.
-
Max.
-50
-50
-0.2
-0.3
-0.9
-1.0
270
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 3/9
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-160V
VEB=-6V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-30V, IC=-10mA, f=100MHz
VCB=-30V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Recommended Soldering Footprint
HBNP54S6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 4/9
Q1, Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.08
0.18
1mA
0.06
500uA
400uA
300uA
0.05
0.04
200uA
0.03
IB=100uA
0.02
Collector Current---IC(A)
Collector Current---IC(A)
5mA
0.16
0.07
0.01
0.14
2.5mA
2mA
1.5mA
0.12
0.1
0.08
1mA
IB=500uA
0.06
0.04
0.02
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
Current Gain vs Collector Current
6
Saturation Voltage vs Collector Current
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
VCESAT=10IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Saturation Voltage---(mV)
Current Gain---HFE
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
100
100
VCE=5V
10
10
0.1
1
10
Collector Current---IC(mA)
100
1
100
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
VBEON@VCE=6V
On Voltage---(mV)
VCESAT=50IB
Saturation Voltage---(mV)
10
Collector Current---IC(mA)
100
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
1000
100
10
0.1
HBNP54S6
1
10
Collector Current---IC(mA)
100
1
10
Collector Current---IC(mA)
100
CYStek Product Specification
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 5/9
CYStech Electronics Corp.
Q1, Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
10000
Current Gain--- HFE
Saturation Voltage---(mV)
VBESAT@IC=10IB
1000
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
100
VCE=5V
100
VCE=2V
VCE=1V
10
1
10
Collector Current---IC(mA)
100
0.1
Cutoff Frequency vs Collector Current
100
Capacitance vs Reverse-biased Voltage
1000
100
VCE=10V
Capacitance---(pF)
Cutoff Frequency---fT(MHz)
1
10
Collector Current--- IC(mA)
100
Cib
10
Cob
10
1
0.1
1
10
Collector Current---IC(mA)
100
0.1
1
10
Reverse-biased Voltage---VR(V)
100
Power Derating Curves
Power Dissipation---PD(mW)
250
200
Dual
150
Single
100
50
0
0
HBNP54S6
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 6/9
CYStech Electronics Corp.
Q2, Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
HFE
VCE=6V
100
VCE=5V
10
VCE=1V
1000
100
1
0.1
1
10
100
Collector Current---IC(mA)
1
1000
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---fT(MHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
fT@VCE=10V
100
10
100
1
10
100
0.1
1000
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curves
Capacitance Characteristics
250
Power Dissipation---PD(mW)
100
Cib
Capacitance---(pF)
10
10
Cob
f=1MHz
200
Dual
150
Single
100
50
0
1
0.1
HBNP54S6
1
10
Reverse-biased Voltage---VR(V)
100
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
HBNP54S6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HBNP54S6
CYStek Product Specification
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 9/9
CYStech Electronics Corp.
SOT-363 Dimension
●
KNM
XX
Marking:
Date
Code
Device
Code
6-Lead SOT-363 Plastic
Surface Mounted Package
CYStek Package Code: S6
Style:
Pin 1. Emitter1 (E1)
Pin 2. Base1 (B1)
Pin 3. Collector2 (C2)
Pin 4. Emitter2 (E2)
Pin 5. Base2 (B2)
Pin 6. Collector1 (C1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HBNP54S6
CYStek Product Specification
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