DMP4025SFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® V(BR)DSS Features RDS(on) max 25mΩ @ VGS = -10V 45mΩ @ VGS = -4.5V -40V ID max TA = +25°C (Notes 7) - 7.2A - 5.4A Description and yet maintain superior switching performance, making it ideal for Backlighting DC-DC Converters Printer Equipment Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Available Case: POWERDI3333-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications Motor Control Fast switching speed – Minimizes switching losses high efficiency power management applications. Low RDS(on) – Minimizes conduction losses Mechanical Data This MOSFET has been designed to minimize the on-state resistance Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.0172 grams (approximate) POWERDI3333-8 Top View Bottom View Device symbol Ordering Information (Note 4 & 5) Product DMP4025SFGQ-7 DMP4025SFGQ-13 Notes: Marking P40 P40 Reel Size (inches) 7 13 Tape Width (mm) 8 8 Quantity per Reel 2,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION Product Summary P40 P40 = Product marking code YYWW = Date Code Marking YY = Year (ex: 12 = 2012) WW = Week (01 - 53) POWERDI is a registered trademark of Diodes Incorporated. DMP4025SFGQ Document Number: DS36897 Rev: 1 - 0 1 of 8 www.diodes.com March 2014 © Diodes Incorporated DMP4025SFGQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V (Note 7) TA = +70°C (Note 7) (Note 6) (Note 8) ID IDM Value -40 20 -7.2 -5.77 -4.65 -26 Units Value 0.81 1.95 155 64 -55 to +150 Unit V A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Symbol (Note 6) (Note 7) (Note 6) (Note 7) PD RθJA TJ, TSTG W °C/W °C 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 7. For a device surface mounted on 25mm x 25mm FR4 PCB with 2oz copper, in still air conditions; 8. Same as note (7), except the device is pulsed with D= 0.02 and pulse width 300µs. POWERDI is a registered trademark of Diodes Incorporated. DMP4025SFGQ Document Number: DS36897 Rev: 1 - 0 2 of 8 www.diodes.com March 2014 © Diodes Incorporated DMP4025SFGQ Thermal Characteristics ADVANCE INFORMATION P(PK), PEAK TRANSIENT POIWER (W) 100 90 Single Pulse RJA = 136C/W RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Figure 1 Single Pulse Maximum Power Dissipation 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 136°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 2 Transient Thermal Resistance 100 1,000 POWERDI is a registered trademark of Diodes Incorporated. DMP4025SFGQ Document Number: DS36897 Rev: 1 - 0 3 of 8 www.diodes.com March 2014 © Diodes Incorporated DMP4025SFGQ Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -1.0 100 V µA nA ID = -250µA, VGS = 0V VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) -0.8 RDS (ON) Forward Transconductance (Notes 9 & 10) Diode Forward Voltage (Note 9) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 11) Total Gate Charge (Note 11) Gate-Source Charge (Note 11) Gate-Drain Charge (Note 11) Turn-On Delay Time (Note 11) Turn-On Rise Time (Note 11) Turn-Off Delay Time (Note 11) Turn-Off Fall Time (Note 11) gfs VSD -1.8 25 45 -1.0 V Static Drain-Source On-Resistance (Note 9) -1.3 18 30 16.6 -0.7 ID = -250μA, VDS = VGS VGS = -10V, ID = -3A VGS = -4.5V, ID = -3A VDS = -5V, ID = -3A IS = -1A, VGS = 0V Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf 1643 179 128 6.43 14.0 33.7 5.5 7.3 6.9 14.7 53.7 30.9 mΩ S V pF Ω nC ns Test Condition VDS = -20V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V VDS = -20V ID = -3A VGS = -10V VDD = -20V, VGS = -10V ID = -3A 9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2% 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. Notes: Typical Characteristics 30 30 25 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 20 15 10 5 0 VDS = -5V T A = 85°C T A = 25°C 20 TA = 150°C TA = 125°C TA = -55°C 15 10 5 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 3 Typical Output Characteristic 2 0 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 5 POWERDI is a registered trademark of Diodes Incorporated. DMP4025SFGQ Document Number: DS36897 Rev: 1 - 0 4 of 8 www.diodes.com March 2014 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.04 0.03 VGS = -4.5V 0.02 VGS = -10V 0.01 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = -10V 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Figure 6 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 VGS = -10V ID = -20A 1.5 1.3 VGS = -4.5V ID = -10A 1.1 0.9 0.7 0.5 -50 0.04 30 1.7 0.05 0.04 0.03 VGS = -4.5V ID = -10A 0.02 VGS = -10V ID = -20A 0.01 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature -25 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 On-Resistance Variation with Temperature 2.0 20 18 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMP4025SFGQ 1.5 ID = -1mA 1.0 ID = -250µA 0.5 16 14 TA = 25°C 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 9 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 10 Diode Forward Voltage vs. Current POWERDI is a registered trademark of Diodes Incorporated. DMP4025SFGQ Document Number: DS36897 Rev: 1 - 0 5 of 8 www.diodes.com March 2014 © Diodes Incorporated DMP4025SFGQ -IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 10,000 Ciss 1,000 Coss 100 Crss T A = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Total Capacitance 30 1 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 Typical Leakage Current vs. Drain-Source Voltage 40 10 -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 10,000 VDS = -20V ID = -12A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Figure 13 Gate-Charge Characteristics 40 POWERDI is a registered trademark of Diodes Incorporated. DMP4025SFGQ Document Number: DS36897 Rev: 1 - 0 6 of 8 www.diodes.com March 2014 © Diodes Incorporated DMP4025SFGQ Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ® A A3 A1 D D2 1 Pin 1 ID L (4x) 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) POWERDI 3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 L 0.35 0.45 0.40 L1 0.39 e 0.65 Z 0.515 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G Y2 8 Dimensions C G G1 Y Y1 Y2 Y3 X X2 5 G1 Y1 Y 1 4 Y3 X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated. DMP4025SFGQ Document Number: DS36897 Rev: 1 - 0 7 of 8 www.diodes.com March 2014 © Diodes Incorporated DMP4025SFGQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMP4025SFGQ Document Number: DS36897 Rev: 1 - 0 8 of 8 www.diodes.com March 2014 © Diodes Incorporated