Diodes DMN3020UFDF 30v n-channel enhancement mode mosfet Datasheet

DMN3020UFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
Features
RDS(ON) Max
ID Max

0.6mm Profile – Ideal for Low Profile Applications
TC = +25°C

PCB Footprint of 4mm2

Low Gate Threshold Voltage

Fast Switching Speed
19mΩ @ VGS = 4.5V
15A
25mΩ @ VGS = 2.5V
14A

ESD Protected Gate
40mΩ @ VGS = 1.8V
10A
120mΩ @ VGS = 1.5V
6A



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
30V
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it

Case: U-DFN2020-6 (Type F)

Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper Leadframe.
ideal for high efficiency power management applications.

Battery Management Application

Power Management Functions

DC-DC Converters
Solderable per MIL-STD-202, Method 208 e4

Weight: 0.007 Grams (Approximate)
U-DFN2020-6 (Type F)
D
G
ESD PROTECTED
Bottom View
Top View
Gate Protection
Diode
Pin Out
Bottom View
S
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN3020UFDF-7
DMN3020UFDF-13
Notes:
Case
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
2F
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
Mar
3
YM
Marking Information
2017
E
Apr
4
2F = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
2018
F
May
5
Jun
6
1 of 7
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2019
G
Jul
7
2020
H
Aug
8
Sep
9
2021
I
Oct
O
2022
J
Nov
N
Dec
D
February 2016
© Diodes Incorporated
DMN3020UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Steady
State
t<5s
ID
TA = +25°C
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Unit
V
V
A
IDM
10.4
8.3
40
IS
2.2
A
IAS
EAS
17
15
A
mJ
ID
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Value
30
±12
15
13
A
A
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady State
t<5s
TA = +25°C
TA = +70°C
Steady State
t<5s
Steady State
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Electrical Characteristics
Value
0.73
0.47
171
112
2.03
1.30
63
40
18
-55 to +150
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Unit
W
°C/W
W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
—
—
—
—
—
—
1
±10
V
µA
µA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS(TH)
0.4
RDS(ON)
—
VSD
—
1.0
19
25
40
120
1.2
V
Static Drain-Source On-Resistance
0.6
16
19
26
32
0.6
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 3.5A
VGS = 1.8V, ID = 2.0A
VGS = 1.5V, ID = 1.0A
VGS = 0V, IS = 1.0A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1304
87
80
1.3
15
27
2.0
2.1
4.1
4.8
20.5
3.2
7.1
1.7
—
—
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
—
—
—
—
—
—
—
—
mΩ
V
Test Condition
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 15V, ID = 4.5A
ns
VDS = 15V, VGS = 4.5V,
RG = 1Ω, ID = 4.5A
ns
nC
IF = 1.0A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
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DMN3020UFDF
30.0
25
VDS = 5V
VGS = 4.5V
20
VGS = 3.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25.0
20.0
VGS = 2.5V
15.0
VGS = 1.5V
VGS = 1.8V
10.0
5.0
15
10
25oC
5
150oC
VGS = 1.2V
-55oC
0
0.0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
0.5
3
0.018
0.016
VGS = 4.5V
0.014
0.012
0
5
10
15
20
25
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS = 2.5V
ID = 4.5A
0.08
0.06
ID = 2.0A
0.04
0.02
0
0
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.04
VGS = 4.5V
0.035
150oC
0.03
0.025
125oC
0.02
85oC
0.015
25oC
0.01
2
0.1
ID, DRAIN-SOURCE CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.022
0.02
0.8
1.1
1.4
1.7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
Figure 1. Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
85oC
125oC
-55oC
0.005
0
1.8
VGS = 4.5V, ID = 4.5A
1.6
1.4
1.2
VGS = 2.5V, ID = 3.5A
1
0.8
0.6
0
5
10
15
20
ID, DRAIN CURRENT (A)
25
30
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (℃)
150
Figure 6. On-Resistance Variation with Temperature
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0.035
0.03
0.025
VGS = 2.5V, ID = 3.5A
0.02
0.015
1
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMN3020UFDF
VGS = 4.5V, ID = 4.5A
0.9
0.8
ID = 1mA
0.7
0.6
0.5
ID = 250µA
0.4
0.3
0.2
0.1
0.01
0
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (℃)
150
-50
Figure 7. On-Resistance Variation with Temperature
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (℃)
150
Figure 8. Gate Threshold Variation vs. Temperature
30
100000
IDSS, LEAKAGE CURRENT (nA)
VGS = 0V
IS, SOURCE CURRENT (A)
25
20
15
TA = 85oC
10
TA = 25oC
TA = 125oC
TA = 150oC
5
TA = -55oC
150oC
10000
125oC
1000
85oC
100
10
1
0
25oC
0.1
0
0.3
0.6
0.9
1.2
1.5
0
VSD, SOURCE-DRAIN VOLTAGE (V)
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
20
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
Figure 9. Diode Forward Voltage vs. Current
8
10000
Ciss
6
1000
VGS (V)
CT, JUNCTION CAPACITANCE (pF)
f=1MHz
4
Coss
100
2
Crss
VDS = 15V, ID = 4.5A
0
10
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
30
Datasheet number: DS38208 Rev. 2 - 2
4
8
12
16
20
24
28
Qg (nC)
Figure 11. Typical Junction Capacitance
DMN3020UFDF
0
Figure 12. Gate Charge
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DMN3020UFDF
100
PW =100µs
ID, DRAIN CURRENT (A)
RDS(ON) Limited
10
1
PW =1ms
PW =10ms
0.1
0.01
TJ(Max) = 150℃ PW =100ms
TA = 25℃
PW =1s
Single Pulse
PW =10s
DUT on 1*MRP Board
DC
VGS= 4.5V
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 171℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
10
100
1000
Figure 14. Transient Thermal Resistance
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
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DMN3020UFDF
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
A1
A
A3
Seating Plane
D
e3
e4
k2
D2a
E
z2
D2
E2a
E2
k1
z1
z(4x)
e2
k
e
L
b
U-DFN2020-6
(Type F)
Dim
Min Max
Typ
A
0.57 0.63
0.60
A1
0.00 0.05
0.03
A3
0.15
b
0.25 0.35
0.30
D
1.95 2.05
2.00
D2
0.85 1.05
0.95
D2a 0.33 0.43
0.38
E
1.95 2.05
2.00
E2
1.05 1.25
1.15
E2a
0.65 0.75
0.70
e
0.65 BSC
e2
0.863 BSC
e3
0.70 BSC
e4
0.325 BSC
k
0.37 BSC
k1
0.15 BSC
k2
0.36 BSC
L
0.225 0.325 0.275
z
0.20 BSC
z1
0.110 BSC
z2
0.20 BSC
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
X3
C
Y
X
Dimensions
Y3
Y2
Y1
Y4
X1
Pin1
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Value
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X2
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
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© Diodes Incorporated
DMN3020UFDF
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
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