ON FNB81560T3 Motion spm 8 sery Datasheet

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FNB81560T3
Motion SPM® 8 Series
Features
General Description
• UL Certified No. E209204 (UL1557)
FNB81560T3 is a Motion SPM 8 module providing a
fully-featured, high-performance inverter output stage for
AC Induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features including under-voltage
lockouts, inter-lock function, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's robust shortcircuit-rated IGBTs. Separate negative IGBT terminals
are available for each phase to support the widest
variety of control algorithms.
• 600 V - 15 A 3-Phase IGBT Inverter Including Control
IC for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Active-high interface, works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• HVIC for Gate Driving, Under-Voltage and Short-Circuit Current Protection
• Fault Output for Under-Voltage and Short-Circuit Current Protection
• Inter-Lock Function to Prevent Short-Circuit
• Shut-Down Input
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Isolation Rating: 1500 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9112 - Smart Power Module, Motion SPM® 8
Series User’s Guide.
• AN-9548 - SPM® 8 Pakage Assembly Guidance for
25L double DIP.
SPMFA-A25
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity
FNB81560T3
NB81560T3
SPMFA-A25
RAIL
15
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FNB81560T3 Motion SPM® 8 Series
July 2017
FNB81560T3 Motion SPM® 8 Series
Integrated Power Functions
• 600 V - 15 A IGBT inverter for three phase DC / AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) protection
Note: Available bootstrap circuit example is given in Figures 5 and 17
• control circuit Under-Voltage Lock-Out (UVLO) protection
• For inverter low-side IGBTs: gate drive circuit, Over Curent Pretection(OCP), Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) protection
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: High-active interface, works with 3.3 / 5 V logic, Schmitt trigger input
Pin Configuration
(25) VBU
(1) P
(24) COM
(23) IN UH
(22) IN UL
(21) VDD
(20) /SD U
(2) U, VSU
Case temperature (Tc)
Detecting point
(3) N U
(19) VBV
(4) V, VSV
(18) IN VH
(17) IN VL
(16) VDD
(15) /SD V
(5) N V
(14) VBW
(13) IN WH
(12) IN WL
(11) VDD
(10) Csc
(9) /FO,/SD W,VTS
(8) COM
(6) W, VSW
(7) N W
Figure 2. Top View
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FNB81560T3 Motion SPM® 8 Series
Pin Descriptions
Pin Number
Pin Name
1
P
2
U, VSU
3
NU
4
V, VSV
5
NV
6
W, VSW
7
NW
8
9
COM
Pin Description
Positive DC-Link Input
Output for U Phase
Negative DC-Link Input for U Phase
Output for V Phase
Negative DC-Link Input for V Phase
Output for W Phase
Negative DC-Link Input for W Phase
Common Supply Ground
/FO, /SDW, VTS Fault Output, Shut-Down Input for W Phase, Temperature Output of Drive IC
10
CSC
Shut Down Input for Over Current and Short Circuit Protection
11
VDD
Common Bias Voltage for IC and IGBTs Driving
12
INWL
Signal Input for Low-Side W Phase
13
INWH
Signal Input for High-Side W Phase
14
VBW
High-Side Bias Voltage for W-Phase IGBT Driving
15
/SDV
Shut-Down Input for V Phase
16
VDD
Common Bias Voltage for IC and IGBTs Driving
17
INVL
Signal Input for Low-Side V Phase
18
INVH
Signal Input for High-Side V Phase
19
VBV
High-Side Bias Voltage for V-Phase IGBT Driving
20
/SDU
Shut-Down Input for U Phase
21
VDD
Common Bias Voltage for IC and IGBTs Driving
22
INUL
Signal Input for Low-Side U Phase
23
INUH
Signal Input for High-Side U Phase
24
COM
Common Supply Ground
25
VBU
High-Side Bias Voltage for U-Phase IGBT Driving
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FNB81560T3 Motion SPM® 8 Series
Internal Equivalent Circuit and Input/Output Pins
P
VBU
VB
HIN
LIN
INUH
INUL
VDD
VDD
/SDU
COM
/SDU
COM
HO
VS
U,VSU
LO
NU
VBV
VB
HIN
LIN
VDD
/SDV
COM
INVH
INVL
VDD
/SDV
HO
VS
V,VSV
LO
Nv
VBW
INWH
INWL
VDD
Csc
/FO, /SDW, VTS
COM
VB
HIN
LIN
HO
VDD
Csc
VS
/FO, /SDW, VTS
COM
W,VSW
LO
Nw
Figure 3. Internal Block Diagram
Note:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes.
3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
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unless otherwise specified.)
Inverter Part
Symbol
VPN
VPN(Surge)
VCES
Parameter
Supply Voltage
Applied between P - NU, NV, NW
Supply Voltage (Surge)
Applied between P - NU, NV, NW
Rating
Unit
450
V
500
V
600
V
15
A
30
A
-40 ~ 150
°C
Rating
Unit
Collector - Emitter Voltage
± IC
Each IGBT Collector Current
± ICP
Each IGBT Collector Current (Peak)
TJ
Conditions
TC = 25°C, TJ ≤150°C (Note 4)
TC = 25°C, TJ
Width (Note 4)
≤150°C, Under 1 ms Pulse
Operating Junction Temperature
Control Part
Symbol
Parameter
Conditions
VDD
Control Supply Voltage
Applied between VDD - COM
20
V
VBS
High-Side Control Bias Voltage
Applied between VBU - VSU, VBV - VSV,
VBW - VSW
20
V
VIN
Input Signal Voltage
Applied between INUH, INVH, INWH, INUL,
INVL, INWL - COM
-0.3 ~ VDD +0.3
V
VFS
Function Supply Voltage
Applied between /FO, /SDW ,VTS - COM
-0.3 ~ VDD +0.3
V
IFO
Fault Current
Sink Current at /FO, /SDW ,VTS pin
2
mA
VSC
Current Sensing Input Voltage
Applied between CSC - COM
-0.3 ~ VDD +0.3
V
Conditions
Rating
Unit
VDD = VBS = 13.5 ~ 16.5 V, TJ = 150°C,
Non-Repetitive, < 2 s
400
V
-40 ~ 125
°C
1500
Vrms
Typ. Max.
Unit
Total System
Symbol
VPN(PROT)
Parameter
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TSTG
Storage Temperature
VISO
Isolation Voltage
Connect Pins to Heat Sink Plate
AC 60 Hz, Sinusoidal, 1 Minute, Connection
Pins to Heat Sink Plate
Thermal Resistance
Symbol
Rth(j-c)Q
Rth(j-c)F
Parameter
Junction to Case Thermal Resistance
(Note 5)
Conditions
Min.
Inverter IGBT part, (Per Module)
-
-
3.40
°C / W
Inverter FWDi part, (Per Module)
-
-
3.86
°C / W
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
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FNB81560T3 Motion SPM® 8 Series
Absolute Maximum Ratings (TJ = 25°C,
unless otherwise specified.)
Inverter Part
Symbol
Parameter
VCE(SAT)
VF
HS
Min.
Typ.
Max.
Unit
Collector - Emitter Saturation VDD = VBS = 15 V
Voltage
VIN = 5 V
IC = 12 A
TJ = 25°C
-
1.60
2.10
V
TJ = 150°C
-
1.80
-
V
FWDi Forward Voltage
TJ = 25°C
-
2.00
2.50
V
TJ = 150°C
-
1.90
-
V
0.25
0.75
1.25
us
-
0.20
0.50
us
-
0.55
1.05
us
-
0.10
0.40
us
Switching Times
tON
Conditions
VIN = 0 V
IF = 12 A
VPN = 400 V, VDD = VBS = 15 V, IC = 15A
TJ = 25°C
VIN = 0 V  5 V, Inductive load
(Note 6)
tC(ON)
tOFF
tC(OFF)
-
0.10
-
us
0.25
0.75
1.25
us
-
0.20
0.50
us
-
0.55
1.05
us
tC(OFF)
-
0.10
0.40
us
trr
-
0.10
-
us
-
-
1.00
mA
trr
LS
VPN = 400 V, VDD = VBS = 15 V, IC = 15A
TJ = 25°C
VIN = 0 V  5 V, Inductive load
(Note 6)
tON
tC(ON)
tOFF
Collector - Emitter Leakage VCE = VCES
Current
ICES
Note:
6. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
H IN x
LIN x
t rr
t o ff
t on
100% I C x
IC x
90% I C x
10% V C Ex
10% I C x
v C Ex
10% V C Ex
10% I C x
t c(o n)
t c(off)
Figure 4. Switching Time
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FNB81560T3 Motion SPM® 8 Series
Electrical Characteristics (TJ = 25°C,
IC
P
V
C BS
+15V
VB
LS Switching
HO
HIN
HS Switching
VPN
U,V,W
VS
V
Inductor
LIN
LS Switching
400V
VDD
V IN
5V
/Fo, /SDw, VTS
VDD
0V
10kΩ
Csc
COM
V
+15V
+5V
HS Switching
LO
NU,V,W
V
Figure 5. Example Circuit for Switching Test
Inductive Load, VPN = 300V, VDD=15V, TJ=25℃
700
IGBT Turn-on, Eon
IGBT Turn-off, Eoff
FRD Turn-off, Erec
600
SWITCHING LOSS ESW [uJ]
SWITCHING LOSS ESW [uJ]
600
Inductive Load, VPN = 300V, VDD=15V, TJ=150℃
700
IGBT Turn-on, Eon
IGBT Turn-off, Eoff
FRD Turn-off, Erec
500
400
300
200
100
500
400
300
200
100
0
0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
10.5
12.0
13.5
15.0
16.5
0.0
1.5
COLLECTOR CURRENT, IC [AMPERES]
3.0
4.5
6.0
7.5
9.0
10.5
12.0
13.5
15.0
16.5
COLLECTOR CURRENT, IC [AMPERES]
Figure 6. Switching Loss Characteristics
4.8
3.3V pull-up with 4.7kohm
5V pull-up with 10kohm
VTS from Pin 9 [V]
4.3
3.8
3.3
2.8
2.3
1.8
1.3
0
25
50
75
T HVIC [ C]
100
125
150
O
Figure 7. V-T Curve of Temperature Output of IC
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FNB81560T3 Motion SPM® 8 Series
One-Leg Diagram of SPM 8
VBS
Symbol
Parameter
Min.
Typ.
Max.
Unit
IQDD
Quiescent VDD Supply
Current
VDD = 15 V,
IN(UH,VH,WH,UL,VL,WL) = 0 V
VDD - COM
-
-
1.7
mA
IPDD
Operating VDD Supply
Current
VDD = 15 V, fPWM = 20 kHz, duty = VDD - COM
50%, applied to one PWM signal
input
-
-
2.2
mA
IQBS
Quiescent VBS Supply
Current
VBS = 15 V, IN(UH, VH, WH) = 0 V
VB(U) - VS(U), VB(V) VS(V), VB(W) - VS(W)
-
-
100
A
IPBS
Operating VBS Supply
Current
VDD = VBS = 15 V, fPWM = 20 kHz, VB(U) - VS(U), VB(V) duty = 50%, applied to one PWM VS(V), VB(W) - VS(W)
signal input for high - side
-
-
700
A
VFOH
Fault Output Voltage
VSC = 0 V, VF Circuit: 10 k to 5 V Pull-up
3.81
-
-
V
VSC = 1 V, VF Circuit: 10 k to 5 V Pull-up
VFOL
VSC(ref)
Short-Circuit Trip Level VDD = 15 V (Note 7)
UVDDD
UVDDR
UVBSD
Supply Circuit
Under-Voltage
Protection
UVBSR
IFO_T
VFO_T
Conditions
-
-
0.5
V
0.46
0.49
0.52
V
Detection level
10.0
11.5
13.0
V
Reset level
10.5
12.0
13.5
V
Detection level
9.5
11.0
12.5
V
Reset level
10.0
11.5
13.0
V
HVIC Temperature
Sensing Current
VDD = VBS = 15 V, THVIC = 25°C
-
82.5
-
A
VDD = VBS = 15 V, THVIC = 75°C
-
207.5
-
A
HVIC Temperature
Sensing Voltage
See Figure 7
VDD = VBS = 15 V, THVIC = 25°C, 10 k to 5 V Pull-up
-
4.18
-
V
VDD = VBS = 15 V, THVIC = 75°C, 10 k to 5 V Pull-up
-
2.93
-
V
40
-
-
s
tFOD
Fault-Out Pulse Width
VFSDR
Shut-down Reset level
VFSDD
Shut-down Detection
level
VIN(ON)
ON Threshold Voltage
VIN(OFF)
OFF Threshold Voltage
Applied between /FO - COM
Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL),
IN(WL) - COM
-
-
2.4
V
0.8
-
-
V
-
-
2.4
V
0.8
-
-
V
Note:
7. Short-circuit current protection function is for all six IGBTs if the /FO, /SDW, VTS pin is connected to /SDx pins.
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FNB81560T3 Motion SPM® 8 Series
Control Part
Symbol
RBS
Parameter
Conditions
Bootstrap Diode
Resitance
Min.
Typ.
Max.
Unit
-
280
-

Min.
Typ.
Max.
Unit
-
300
400
V
VDD = 15V, TJ = 25°C
0.06
0.05
IF [A]
0.04
0.03
0.02
0.01
o
T J =25 C, V DD=15V
0.00
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
V F [V]
Figure 8. Built-In Bootstrap Diode Charaterstics
Recommended Operating Conditions
Symbol
Parameter
Conditions
VPN
Supply Voltage
Applied between P - NU, NV, NW
VDD
Control Supply Voltage
Applied between VDD - COM
14.0
15
16.5
V
VBS
High - Side Bias Voltage
Applied between VBU - VSU, VBV -VSV, VBW - VSW
13.0
15
18.5
V
-1
-
1
V / s
-
-
s
4
V
s
dVDD / dt, Control Supply Variation
dVBS / dt
tdead
Blanking Time for
Preventing Arm - Short
For each input signal
0.5
VSEN
Voltage for Current
Sensing
Applied between NU, NV, NW - COM
(Including surge voltage)
-4
VDD = VBS = 15 V, IC  30 A, Wiring Inductance
between NU, V, W and DC Link N < 10nH (Note 8)
0.7
-
-
0.7
-
-
PWIN(ON) Minimun Input Pulse
PWIN(OFF) Width
Note:
8. This product might not make response if input pulse width is less than the recommanded value.
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FNB81560T3 Motion SPM® 8 Series
Bootstrap Diode Part
Parameter
Device Flatness
Mounting Torque
Conditions
See Figure 9
Min.
Typ.
Max.
Unit
-50
-
100
m
Mounting Screw: - M3
Recommended 0.7 N • m
0.6
0.7
0.8
N•m
See Figure 10
Recommended 7.1 kg • cm
5.9
6.9
7.9
kg • cm
-
5.0
-
g
Weight
Figure 9. Flatness Measurement Position
Pre – Screwing : 1  2
Final Screwing : 2  1
2
1
Figure 10. Mounting Screws Torque Order
Note:
9. Do not make over torque when mounting screws. Much mounting torque may cause package cracks, as well as bolts and Al heat-sink destruction.
10. Avoid one side tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause of package to be damaged.
The pre-screwing torque is set to 20 ~ 30 % of maximum torque rating.
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FNB81560T3 Motion SPM® 8 Series
Mechanical Characteristics and Ratings
FNB81560T3 Motion SPM® 8 Series
Time Charts of Protective Function
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVDDR
a1
Control
Supply Voltage
a6
UVDDD
a3
a2
a7
a4
Output Current
a5
Fault Output Signal
Figure 11. Under-Voltage Protection (Low-Side)
a1 : Control supply voltage rises: After the voltage rises UVDDR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVDDD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVDDR).
a7 : Normal operation: IGBT ON and carrying current.
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVBSR
Control
Supply Voltage
b5
b1
UVBSD
b3
b6
b2
b4
Output Current
High-level (no fault output)
Fault Output Signal
Figure 12. Under-Voltage Protection (High-Side)
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR)
b6 : Normal operation: IGBT ON and carrying current
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Lin
d3
d4
d5
Ho
d1
Hin : High-side Input Signal
Lin : Low-side Input Signal
Ho : High-side IGBT Gate Voltage
Lo : Low-side IGBT Gate Voltage
/Fo : Fault Output
d2
Lo
/Fo
Figure 13. Inter-Lock Function
d1 : High Side First - Input - First - Output Mode
d2 : Low Side Noise Mode : No LO
d3 : High Side Noise Mode : No HO
d4 : Low Side First - Input - First - Output Mode
d5 : IN - Phase Mode : No HO
HIN
LIN
Smart Turn-off
HO
Soft Off
Activated by next input
after fault clear
LO
Over-Current
Detection
No Output
CSC
/FO
Figure 14. Fault-Out Function By Over Current Protection
HIN : High-side Input Signal
LIN : Low-side Input Signal
HO : High-Side Output Signal
LO : Low-Side Output Signal
CSC : Over Current Detection Input
/FO : Fault Out Function
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FNB81560T3 Motion SPM® 8 Series
Hin
FNB81560T3 Motion SPM® 8 Series
HIN
LIN
No Output
HO
Activated by next
input after fault
clear
Smart
Turn-off
Soft Off
LO
C SC
/SD x
External
shutdown input
Figure 15. Shutdown Input Function By External Command
HIN : High-side Input Signal
LIN : Low-side Input Signal
HO : High-Side Output Signal
LO : Low-Side Output Signal
CSC : Over Current Detection Input
/SDx : Shutdown Input Function
Input/Output Interface Circuit
5 V L in e (M C U o r C o n tro l p o w e r)
R PF = 1 0kΩ
SPM
IN U H , IN V H , IN W H
IN U L , IN V L , IN W L
MCU
/F O , /S D W , V T S
COM
Figure 16. Recommended MCU I/O Interface Circuit
Note:
11. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s
printed circuit board. The input signal section of the SPM 8 product integrates 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay
attention to the signal voltage drop at input terminal.
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VBU
VB
Gating UH
Gating UL
CBS
RS
CBSC
INUH
INUL
RS
CPS
VDD
CPS
/SDU
COM
HO
HIN
LIN
VS
VDD
/SDU
COM
LO
U,VSU
Nu
M
C
U
VBV
Gating VH
Gating VL
CBS
RS
CBSC
INVH
INVL
RS
CPS
VDD
CPS
/SDV
5V
VBW
Gating WH
Gating WL
CBS
RS
D
M
CDCS
VDC
LO
Nv
W,VSW
VS
/Fo, /SDw, VTS
Csc
A
LO
Csc
COM
COM
RF
CSPC15
V,VSV
VDD
/Fo, /SDw, VTS
CSP15
VS
HIN
LIN
VDD
Fault
CPF
HIN
LIN
VDD
/SDV
COM
VB
INWH
INWL
CPS
HO
HO
CBSC
RS
CPS
VB
Nw
CSC
RSU
E
RSV
B
Power
GND Line
RSW
C
W-Phase Current
V-Phase Current
U-Phase Current
Input Signal for
Short-Circuit Protection
Control
GND Line
Figure 17. Typical Application Circuit
Note:
12. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2 ~ 3 cm)
13. /FO is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 2 mA. Please refer to
Figure 16.
14. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
15. Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. (Recommended RS = 100 Ω , CPS = 1 nF)
16. Each wiring pattern inductance of A point should be minimized (Recommend less than 10nH). Use the shunt resistor RS(U/V/W) of surface mounted (SMD) type to reduce wiring inductance. To prevent malfunction, wiring of point E should be connected to the terminal of the shunt resistor RS(U/V/W) as close as possible.
17. To prevent errors of the protection function, the wiring of B, C, and D point should be as short as possible.
18. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s. Do enough evaluation on the real system because short-circuit protection
time may very wiring pattem layout and value of the RF and CSC time constant.
19. The connection between control GND line and power GND line which includes the NU, NV, NW must be connected to only one point. Please do not connect the control GND
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
20. Each capacitor should be mounted as close to the pins of the Motion SPM 8 product as possible.
21. To prevent surge destruction, the wiring between the smoothing capacitor and the P and GND pins should be as short as possible. The use of a high frequency non-inductive
capacitor of around 0.1 ~ 0.22 F between the P and GND pins is recommended.
22. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
23. The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals.
(Recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω )
24. Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and
frequency characteristics in CBSC.
25. For the detailed information, please refer to the application notes.
26. /FO and /SD must be connected as short as possible.
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FNB81560T3 Motion SPM® 8 Series
P
15V
FNB81560T3 Motion SPM® 8 Series
Detailed Package Outline Drawings (FNB81560T3, Long Lead)
Max 0.80
0.50±0.10 18X
2.60±0.30 5X
(0.45)
1.30±0.30 12X
(1.70)
(1.70)
(1.70)
(11.70)
20.70±0.40
(11.44)
)
0°
(9
7
)
1
50
0.
(3.00)
18.00±0.40
8
14.00±0.25
25
(0.70)
(R
∅3.20±0.20 2X
(0.55)
14.30±0.30
(9.00)
14.30±0.30
0.40+0.10
-0.05
22X1.30=28.60±0.30
2.90±0.20
(9.50)
13.00±0.30 14.30±0.30
32.00±0.20
NOTES: UNLESS OTHERWISE SPECIFIED
A) NO PACKAGING STANDARD APPLIES
B) ALL DIMENSIONS ARE IN MILLIMETERS
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS
D) ( ) IS REFERENCE
E) DRAWING FILENAME: MOD25DAREV2
(0.45)
2.60±0.30
3.90±0.30 7X
0.60±0.10 7X
1.30±0.30
Max 1.00
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD25DA.pdf
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
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