3N60 600V N-Channel Power MOSFET ● ● ● ● ● RDS(ON) < 3.6Ω@ VGS = 10V, ID =1.5A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/dt capability, high ruggedness PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 Current 3A 3.6 @ VGS =10V Case: TO-251,TO-252,TO-220,ITO-220 TO-262,TO-263 Package Pin Definition: 1. Gate 2. Drain 3. Source Ordering Information Package Packing DMP3N60-TU TO-251 75pcs / Tube DMD3N60-TR TO-252 DMD3N60-TU TO-252 2.5Kpcs / 13” Reel 75pcs / Tube DMT3N60-TU TO-220 50pcs / Tube DMF3N60-TU ITO-220 50pcs / Tube DMK3N60-TU TO-262 50pcs / Tube DMG3N60-TU TO-263 DMG3N60-TU TO-263 50pcs / Tube 800pcs / 13" Reel Part No. Block Diagram D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) SYMBOL VDSS VGSS IAR ID IDM RATINGS 600 ±30 3.0 3.0 12 UNIT V V A A A EAS 200 mJ 75 W 34 W 50 W +150 -55 ~ +150 -55 ~ +150 °C °C °C TO-220/TO-262/TO-263 Power Dissipation ITO-220 PD TO-251/TO-252 Junction Temperature Operating Temperature Storage Temperature TJ TOPR TSTG Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L = 44.4mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C May,2015-REV.00 www.dyelec.com 1/8 3N60 600V N-Channel Power MOSFET THERMAL DATA PARAMETER TO-220/ITO-220 TO-262/TO-263 Junction to Ambient TO-251/ TO-252 SYMBOL RATING θJA °C/W 110 1.70 TO-220/TO-262/TO-263 Junction to Case UNIT 62.5 ITO-220 °C/W 3.70 θJC TO-251/ TO-252 2.6 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse e TEST CONDITIONS BVDSS VGS = 0V, ID = 250μA IDSS VDS = 600V, VGS = 0V 10 μA VGS = 30V, VDS = 0V 100 nA VGS = -30V, VDS = 0V -100 nA 4.0 3.6 V Ω 350 50 5.5 450 65 7.5 pF pF pF 35 60 100 65 18.5 5.2 4.9 50 70 150 75 23 - ns ns ns ns nC nC nC 1.4 V 3.0 A 12 A IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10 V, ID=1.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =30V, ID =0.5A, R Turn-Off Delay Time tD(OFF) G=25Ω (Note 1, 2) Turn-Off Fall Time tF Total Gate Charge QG VDS=50V, ID=1.3 A, IG=100μA Gate-Source Charge QGS VGS=10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS VGS=0 V, IS=3.0A Drain-Source Diode Forward Voltage VSD Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 3A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.. Essentially independent of operating temperature May,2015-REV.00 MIN TYP MAX UNIT www.dyelec.com 600 V 2.0 210 1.2 ns μC 2/8 3N60 600V N-Channel Power MOSFET TYPICAL CHARACTERISTICS On-Resistance Variation vs. Drain Current and Gate Voltage On State Current vs. Allowable Case Temperature 10 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (Ω) 6 5 VGS=20V 4 VGS=10V 3 2 1 0 0 2 4 6 Note:: J=25℃ 8 10 12 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) Drain Current, ID (A) May,2015-REV.00 Notes: 1. VGS=0V 2. 250µs Test www.dyelec.com 3/8 3N60 600V N-Channel Power MOSFET Drain-Source Breakdown Voltage, BVDSS (Normalized) Drain-Source On-Resistance, RDS(ON) (Normalized) TYPICAL CHARACTERISTICS Maximum Drain Current vs. Case Temperature Transient Thermal Response Curve 3.0 1 2.5 D=0.5 2.0 0.2 0.1 0.1 1.5 0.05 0.02 1.0 0.01 Single Pulse 0.01 Notes: 1. θJC (t) = 1.18 /W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 0.5 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) 0 25 50 75 100 125 Case Temperature, TC (°C) 150 Safe Operating Area – 600V Operation in This Area is Limited by RDS(on) 101 100µs 1ms 10ms 100 DC 10-1 Notes: 1. TJ=25 2. TJ=150 3. Single Pulse 10-2 100 101 102 600 103 Drain-Source Voltage, VDS (V) May,2015-REV.00 www.dyelec.com 4/8 3N60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing ITO-220 Mechanical Drawing May,2015-REV.00 www.dyelec.com 5/8 3N60 600V N-Channel Power MOSFET TO-262 Mechanical Drawing TO-263 Mechanical Drawing May,2015-REV.00 www.dyelec.com 6/8 3N60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing TO-252 Mechanical Drawing May,2015-REV.00 www.dyelec.com 7/8 3N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. May,2015-REV.00 www.dyelec.com 8/8