ON LM9013G Amplifier transistor Datasheet

LM9013G, LM9013H
Preferred Devices
Amplifier Transistors
NPN Silicon
• Moisture Sensitivity Level: 1
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Collector Current – Continuous
IC
1000
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
–55 to
+150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
2
BASE
1
EMITTER
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, (Note 1.)
Junction to Ambient
RθJA
200
°C/W
Thermal Resistance,
Junction to Case
RθJC
83.3
°C/W
3
TO–92
CASE 29
STYLE 1
LM90
13x
YWW
1. RJA is measured with the device soldered into a typical printed circuit board.
LM9013x = Specific Device Code
x
= G or H
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
LM9013G
TO–92
5000 Units/Box
LM9013H
TO–92
5000 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 0
1
Publication Order Number:
LM9013G/D
LM9013G, LM9013H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
25
–
25
–
3.0
–
–
0.5
118
144
166
202
–
1.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 16 Vdc, IE = 0)
Vdc
Vdc
Vdc
µAdc
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 1.0 Vdc)
hFE
LM9013G
LM9013H
Collector–Emitter Saturation Voltage
(IC = 250 mAdc, IB = 25 mAdc)
–
VCE(sat)
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2
Vdc
LM9013G, LM9013H
PACKAGE DIMENSIONS
TO–92
(TO–226)
CASE 29–11
ISSUE AL
A
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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3
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
LM9013G, LM9013H
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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LM9013G/D
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