ETC2 FZT696BTA Sot223 npn silicon planar medium power high gain transistor Datasheet

SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT696B
TYPICAL CHARACTERISTICS
IC/IB=100
0.6
0.6
0.4
0.2
0
0.01
0.1
1
1.4
0.01
10
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
VCE=5V
-55°C
+25°C
+100°C
+175°C
1.6
1.5K
1K
0.8
0.6
- (Volts)
1.0
- Typical Gain
1.4
1.2
IC/IB=50
1.2
1.0
h
V
0.6
h
0.4
0.2
0
0
0.01
0.1
10
1
0
1.6
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
1
-55°C
+25°C
+100°C
+175°C
VCE=5V
1.4
0.1
1.2
1.0
DC
1s
100ms
10ms
1ms
100µs
0.8
0.01
0.6
0.4
0.2
0
0
0.01
0.1
1
0.001
1V
10
IC - Collector Current (Amps)
10V
100V
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 228
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
180
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
0.5
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
0.8
500
0.4
0.2
- (Volts)
0.1
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.6
C
ABSOLUTE MAXIMUM RATINGS.
0.2
0
V
IC/IB=50
V
V
0.4
- Normalised Gain
-55°C
+25°C
+100°C
+175°C
0.8
IC/IB=10
- (Volts)
- (Volts)
Tamb=25°C
IC/IB=50
0.8
FZT696B
ISSUE 4 – FEBRUARY 1997
FEATURES
* 250 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL –
FZT696B
1000V
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
180
V
IC=100µ A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
180
V
IC=10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
5
V
IE=100µ A
Collector Cut-Off Current
ICBO
0.1
µA
VCB=140V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.2
0.2
0.25
V
V
V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
Base-Emitter Saturation Voltage
VBE(sat)
0.9
V
IC=200mA, IB=5mA*
Base-Emitter Turn-OnVoltage
VBE(on)
0.9
V
IC=200mA, VCE=5V*
Static Forward Current Transfer
Ratio
hFE
500
150
Transition Frequency
fT
70
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ton
toff
IC=100mA, VCE=5V*
IC=200mA, VCE=5V*
MHz
IC=50mA, VCE=5V
f=50MHz
200
pF
VEB=0.5V, f=1MHz
6
pF
VCE=10V, f=1MHz
80
4400
ns
ns
IC=100mA, IB1=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 227
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT696B
TYPICAL CHARACTERISTICS
IC/IB=100
0.6
0.6
0.4
0.2
0
0.01
0.1
1
1.4
0.01
10
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
VCE=5V
-55°C
+25°C
+100°C
+175°C
1.6
1.5K
1K
0.8
0.6
- (Volts)
1.0
- Typical Gain
1.4
1.2
IC/IB=50
1.2
1.0
h
V
0.6
h
0.4
0.2
0
0
0.01
0.1
10
1
0
1.6
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
1
-55°C
+25°C
+100°C
+175°C
VCE=5V
1.4
0.1
1.2
1.0
DC
1s
100ms
10ms
1ms
100µs
0.8
0.01
0.6
0.4
0.2
0
0
0.01
0.1
1
0.001
1V
10
IC - Collector Current (Amps)
10V
100V
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 228
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
180
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
0.5
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
0.8
500
0.4
0.2
- (Volts)
0.1
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.6
C
ABSOLUTE MAXIMUM RATINGS.
0.2
0
V
IC/IB=50
V
V
0.4
- Normalised Gain
-55°C
+25°C
+100°C
+175°C
0.8
IC/IB=10
- (Volts)
- (Volts)
Tamb=25°C
IC/IB=50
0.8
FZT696B
ISSUE 4 – FEBRUARY 1997
FEATURES
* 250 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL –
FZT696B
1000V
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
180
V
IC=100µ A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
180
V
IC=10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
5
V
IE=100µ A
Collector Cut-Off Current
ICBO
0.1
µA
VCB=140V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.2
0.2
0.25
V
V
V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
Base-Emitter Saturation Voltage
VBE(sat)
0.9
V
IC=200mA, IB=5mA*
Base-Emitter Turn-OnVoltage
VBE(on)
0.9
V
IC=200mA, VCE=5V*
Static Forward Current Transfer
Ratio
hFE
500
150
Transition Frequency
fT
70
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ton
toff
IC=100mA, VCE=5V*
IC=200mA, VCE=5V*
MHz
IC=50mA, VCE=5V
f=50MHz
200
pF
VEB=0.5V, f=1MHz
6
pF
VCE=10V, f=1MHz
80
4400
ns
ns
IC=100mA, IB1=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 227
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