BWTECH MSD2N70 700v n-channel mosfet Datasheet

MSD2N70
700V N-Channel MOSFET
Description
The MSD2N70 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-252
package is universally preferred for all
commercial-industrial applications
Features
• 100% EAS Test
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unequalled Gate Charge: 10.5 nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
Part No./ T:2,500/Reel
Part No./ R:80/Tube , 4,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
±30
V
Continuous Drain Current @ TC=25°C
1.6
A
Continuous Drain Current @ TC=70°C
1.0
A
6
A
ID
IDM
Pulsed Drain Current
Publication Order Number: [MSD2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSD2N70
700V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
a
Value
Unit
110
mJ
4.4
mJ
1.6
A
IAR
Continuous Source Current (Diode Conduction)
dV/dt
Peak Diode Recovery dV/dt
5.5
V/ns
Power Dissipation (TC=25°C)
44
W
Power Dissipation (TC=100°C)
0.22
W
-55 to +150
°C
PD
TJ/TSTG
Operating Junction and Storage Temperature
NOTE:
1. Repetitive rating; pulse width limited by maximum junction temperature.
Thermal Characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
Maximum
Rthjc
Typical thermal resistance
2.87
RθJA
Typical thermal resistance
55
Units
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
Static Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
4.0
V
VGS
VDS = VGS, ID = 250μA
2.0
*RDS(ON)
VGS = 10V , ID = 0.8 A
--
5.5
6.0
Ω
BVDSS
VGS = 0 V , ID = 250 μA
700
--
--
V
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
IDSS
VDS = 700 V , VGS = 0 V
VDS = 560 V , VGS = 0 V , Tj = 125°C
IGSSF
VDS = 30 V, VDs = 0 V
IGSSR
VDS = -30 V, VDs = 0 V
0.7
--
--
10
100
uA
100
nA
--
--
-100
nA
Min
Typ.
Max.
Units
--
340
445
pF
--
45
60
pF
CRSS
--
7.5
10
pF
td(on)
--
10
20
ns
Dynamic Characteristics
Symbol
Test Conditions
CISS
COSS
VDS = 25 V, VGS = 0 V,
F = 1.0MHz
tr
VDS = 350 V, ID = 1.6 A,
--
25
50
ns
td(off)
RG = 25 Ω
--
20
40
ns
--
25
50
ns
tf
Publication Order Number: [MSD2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSD2N70
700V N-Channel MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
--
10.5
14
nC
--
2.0
--
--
4.0
--
Min
Typ.
Max.
IS
--
--
1.6
ISM
--
--
6
--
--
1.5
V
--
250
--
ns
--
1.2
--
uC
Qg
Qgs
VDS = 560 V,ID = 1.6 A,
VGS = 10 V
Qgd
Source-Drain Diode Characteristics
Symbol
Test Conditions
VSD
trr
Qrr
Units
A
IF = 1.6 A , VGS = 0 V
IF = 1.6 A , VGS = 0 V , dIF/dt=100A/μs
NOTE:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=1.6A, VDD=50V, RG=25W, Starting TJ =25°C
3. ISD≤1.6A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MSD2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSD2N70
700V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSD2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSD2N70
700V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSD2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSD2N70
700V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [MSD2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSD2N70
700V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSD2N70]
© Bruckewell Technology Corporation Rev. A -2014
MSD2N70
700V N-Channel MOSFET
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Publication Order Number: [MSD2N70]
© Bruckewell Technology Corporation Rev. A -2014
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