ON NDPL100N10BG N-channel power mosfet Datasheet

NDPL100N10B
Power MOSFET
100V, 7.2mΩ, 100A, N-Channel
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Features
• Low On-Resistance
• Low Gate Charge
• High Speed Switching
• 100% Avalanche Tested
• Pb-Free and RoHS Compliance
VDSS
RDS(on) Max
7.2 mΩ@15V
100V
N-Channel
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
2
Value
Unit
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
100
A
IDP
400
A
PW≤10μs, duty cycle≤1%
Power Dissipation
PD
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
2.1
110
175
°C
−55 to +175
°C
IS
100
A
Avalanche Energy (Single Pulse) *1
EAS
147
mJ
TL
260
°C
Purposes, 3mm from Case for 10 Seconds
1 : Gate
2 : Drain
3 : Source
1
3
W
Source Current (Body Diode)
Lead Temperature for Soldering
100A
8.7 mΩ@10V
Electrical Connection
Specifications
Drain Current (Pulse)
ID Max
Marking
100N10
B
Thermal Resistance Ratings
1
Parameter
Junction to Case Steady State
Junction to Ambient *
2
Symbol
Value
RθJC
1.36
RθJA
71.4
Unit
2
3
LOT No.
TO-220-3L
°C/W
Note : *1 VDD=48V, L=100μH, IAV=40A (Fig.1)
*2 Insertion mounted
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 1
1
Publication Order Number :
NDPL100N10B/D
NDPL100N10B
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Value
Conditions
min
typ
Unit
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0V
10
μA
Gate to Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
4
V
Forward Transconductance
gFS
VDS=10V, ID=50A
75
RDS(on)1
ID=50A, VGS=15V
6.0
7.2
mΩ
RDS(on)2
ID=50A, VGS=10V
6.7
8.7
mΩ
Static Drain to Source On-State Resistance
100
V
2
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
IS=100A, VGS=0V
1.1
Reverse Recovery Time
trr
See Fig.3
130
ns
Reverse Recovery Charge
Qrr
IS=100A, VGS=0V, VDD=50V, di/dt=100A/μs
400
nC
VDS=50V, f=1MHz
See Fig.2
VDS=48V, VGS=10V, ID=100A
2,950
pF
1,250
pF
20
pF
40
ns
385
ns
68
ns
52
ns
35
nC
13
nC
10
nC
1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
≥50Ω
10V
0V
D
L
S
NDPL100N10B
G
VDD
50Ω
Fig.3 Reverse Recovery Time Test Circuit
NDPL100N10B
D
L
G
S
VDD
Driver MOSFET
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2
Fig.2 Switching Time Test Circuit
NDPL100N10B
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3
NDPL100N10B
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4
NDPL100N10B
Package Dimensions
NDPL100N10BG
TO-220, 3-Lead / TO-220-3L
CASE 221AU
ISSUE O
unit : mm
1:Gate
2:Drain
3:Source
ORDERING INFORMATION
Device
Package
Shipping
note
NDPL100N10BG
TO-220, 3-Lead
TO-220-3L
50 pcs. / Tube
Pb-Free
Note on usage : Since the NDPL100N10B is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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