MORE MSP0470D -40v(d-s) p-channel enhancement mode power mos fet Datasheet

MSP0470D
-40V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-40V,ID =-70A
RDS(ON) <10mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
Lead Free
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switch
● Load switch in high current applications
● DC/DC converters
Marking and pin assignment
PIN Configuration
Schematic diagram
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
MSP0370D
MSP0370D
TO-252-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
VGS
±20
V
ID
-70
A
ID (100℃)
-49.5
A
Pulsed Drain Current
IDM
-200
A
Maximum Power Dissipation
PD
130
W
1.04
W/℃
EAS
1012
mJ
TJ,TSTG
-55 To 150
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
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MSP0470D
Thermal Characteristic
(Note 2)
Thermal Resistance, Junction-to-Case
RθJC
℃/W
0.96
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-40
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-40V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.2
-1.9
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-20A
-
7.5
10
mΩ
gFS
VDS=-10V,ID=-20A
-
50
-
S
-
5380
-
PF
-
570
-
PF
Crss
-
500
-
PF
Turn-on Delay Time
td(on)
-
15
-
nS
Turn-on Rise Time
tr
VDD=-20V, RL=2Ω,
-
12
-
nS
td(off)
VGS=-10V,RG=1Ω
-
70
-
nS
-
18
-
nS
-
106
nC
-
22
nC
-
27
nC
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=-20V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-20,ID=-20A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
VSD
VGS=0V,IS=-70A
IS
trr
Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
-
-1.2
V
-70
A
-
-
TJ = 25°C, IF =- 70A
-
53
nS
(Note3)
-
50
nC
di/dt = -100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25℃,VDD=-20V,VG=-10V,L=1mH,Rg=25Ω,IAS=45A
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MSP0470D
Test Circuit
1) EAS Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
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MSP0470D
ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
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Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
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C Capacitance (pF)
MSP0470D
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
TJ-Junction Temperature(℃)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 ID Current Derating vs Junction
Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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MSP0470D
TO-252 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
2.200
2.400
0.087
0.094
A1
0.000
0.127
0.000
0.005
b
0.660
0.860
0.026
0.034
c
0.460
0.580
0.018
0.023
D
6.500
6.700
0.256
0.264
D1
5.100
5.460
0.201
0.215
D2
4.830 TYP.
0.190 TYP.
E
6.000
6.200
0.236
0.244
e
2.186
2.386
0.086
0.094
L
9.800
10.400
0.386
0.409
L1
L2
2.900 TYP.
1.400
L3
0.114 TYP.
1.700
0.055
1.600 TYP.
0.067
0.063 TYP.
L4
0.600
1.000
0.024
0.039
Φ
1.100
1.300
0.043
0.051
θ
0°
8°
0°
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
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0.211 TYP.
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