Spec. No. : C034E3 Issued Date : 2018.02.01 Revised Date : Page No. : 1/ 8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB7D0N06RE3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol 60V 60A 11.4A 6.1 mΩ(typ) 12 mΩ(typ) Outline MTB7D0N06RE3 TO-220 GDS G：Gate D：Drain S：Source Ordering Information Device MTB7D0N06RE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB7D0N06RE3 CYStek Product Specification Spec. No. : C034E3 Issued Date : 2018.02.01 Revised Date : Page No. : 2/ 8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V Avalanche Current @ L=0.1mH Single Pulse Avalanche Energy @ L=1mH, ID=20A, VDD=25V (Note 4) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) TC=100°C (Note 1) Power Dissipation TA=25°C (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature VDS VGS 60 ±20 60 38 11.4 9.1 240 50 200 5 57 23 2.1 1.3 ID IDSM IDM IAS EAS EAR PD PDSM TL 300 TPKG 260 Unit V A mJ W °C Tj, Tstg -55~+150 *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 2.2 60 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by condition of VDD=25V, ID=20A, L=0.1mH, VGS=10V. MTB7D0N06RE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C034E3 Issued Date : 2018.02.01 Revised Date : Page No. : 3/ 8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Min. Typ. Max. Unit Test Conditions 60 1 - 0.28 15.6 6.1 12 2.5 ±100 1 5 8 17 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=10A VGS=±20V, VDS=0V VDS =48V, VGS =0V VDS =48V, VGS =0V, Tj=55°C VGS =10V, ID=20A VGS =4.5V, ID=15A 45.6 8.9 9.3 20.4 19 62 13 2763 475 86 2 - 0.86 23.7 19.2 60 240 1.2 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA mΩ nC VDS=48V, VGS=10V, ID=20A ns VDS=30V, ID=20A, VGS=10V, RGS=4.7Ω pF VDS=30V, VGS=0V, f=1MHz Ω f=1MHz A V ns nC IS=20A, VGS=0V VGS=0V, IF=20A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTB7D0N06RE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C034E3 Issued Date : 2018.02.01 Revised Date : Page No. : 4/ 8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 50 45 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V ID, Drain Current(A) 40 35 4V 30 25 20 3V 15 10 1.2 1 0.8 ID=250μA, VGS=0V 0.6 VGS=2.5V 5 0.4 0 0 1 2 3 4 VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 100 VGS=4.5V 10 VGS=10V 1.0 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 50 45 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=20A 40 35 30 25 20 15 10 5 2.0 VGS=10V, ID=20A RDS(ON) @Tj=25°C : 6.1mΩ typ. 1.6 1.2 0.8 0.4 0.0 0 0 MTB7D0N06RE3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C034E3 Issued Date : 2018.02.01 Revised Date : Page No. : 5/ 8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 10000 1000 VGS(th), Normalized Threshold Voltage Capacitance---(pF) Ciss C oss 100 Crss f=1MHz 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) 1.2 ID=1mA 1.0 0.8 ID=250μA 0.6 0.4 -75 -50 -25 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=12V, 30V, 48V from left to right VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=15V 0.1 Pulsed Ta=25°C 0.01 0.001 8 6 4 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 5 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) 45 50 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 80 RDS(ON) Limited ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10μs 100 100μs 10 1ms 10ms TA=25°C, Tj=150°C VGS=10V,RθJC=2.2°C/W Single Pulse 1 100ms DC 70 60 50 40 30 20 RθJC=2.2°C/W,VGS=10V 10 0 0.1 0.01 MTB7D0N06RE3 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tc, Case Temperature(°C) 175 CYStek Product Specification Spec. No. : C034E3 Issued Date : 2018.02.01 Revised Date : Page No. : 6/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case (Note on page 2) Typical Transfer Characteristics 50 3000 VDS=10V TJ(MAX) =150°C TC=25°C RθJC=2.2°C/W 2500 40 35 Power (W) ID, Drain Current (A) 45 30 25 20 2000 1500 1000 15 10 500 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VGS, Gate-Source Voltage(V) 4.5 5 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJC(t) 4.RθJC=2.2°C/W 0.05 0.02 0.01 0.01 0.001 1.E-05 MTB7D0N06RE3 Single Pulse 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C034E3 Issued Date : 2018.02.01 Revised Date : Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB7D0N06RE3 CYStek Product Specification Spec. No. : C034E3 Issued Date : 2018.02.01 Revised Date : Page No. : 8/ 8 CYStech Electronics Corp. TO-220 Dimension Marking: 4 Device Name Date Code B7D0 N06R □□□□ 1 3-Lead TO-220 Plastic Package CYStek Package Code: E3 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Millimeters Min. Max. 4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 10.250 9.910 9.750 8.950 12.650 12.950 DIM A A1 b b1 c c1 D E E1 Inches Min. Max. 0.173 0.181 0.089 0.100 0.028 0.036 0.046 0.054 0.013 0.026 0.047 0.055 0.404 0.390 0.384 0.352 0.510 0.498 DIM e e1 F H h L L1 V Φ Millimeters Min. Max. 2.540* 4.980 5.180 2.650 2.950 8.100 7.900 0.000 0.300 12.900 13.400 2.850 3.250 7.500 REF 3.400 3.800 Inches Min. Max. 0.100* 0.196 0.204 0.104 0.116 0.319 0.311 0.000 0.012 0.508 0.528 0.112 0.128 0.295 REF 0.134 0.150 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB7D0N06RE3 CYStek Product Specification