Diodes DMT6018LDR-7 Dual n channel enhancement mode mosfet Datasheet

DMT6018LDR
DUAL N CHANNEL ENHANCEMENT MODE MOSFET
Device
BVDSS
N-Channel
60V
Features
RDS(ON) MAX
ID MAX
TA = +25°C
17mΩ @ VGS = 10V
8.8A
26mΩ @ VGS = 4.5V
6.9A
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications








Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description
Power Management Functions
Analog Switch






Case: V-DFN3030-8 (Type H)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.02 grams (Approximate)
D1
D2
V-DFN3030-8 (Type H)
S2
S2
S2
G2
G1
D2
D1
S1
S1
S1
G2
S1
G1
S2
Pin 1
Top View
Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number
DMT6018LDR-7
DMT6018LDR-13
Notes:
Case
V-DFN3030-8 (Type H)
V-DFN3030-8 (Type H)
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
ADVANCED INFORMATION
Product Summary
T18 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 for 2016)
WW = Week Code (01 to 53)
T18
DMT6018LDR
Document number: DS36808 Rev. 2 - 2
1 of 6
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October 2016
© Diodes Incorporated
DMT6018LDR
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
ADVANCED INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
60
±20
8.8
7.1
ID
A
11.4
9.1
3
50
8
32
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 1mH
Avalanche Energy (Note 7) L = 1mH
Unit
V
V
IS
IDM
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Symbol
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Value
1.1
0.7
108
65
1.9
1.2
66
40
11.4
-55 to +150
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
-
-
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
1.0
RDS(ON)
-
mΩ
VSD
-
3.0
17
26
-
V
Static Drain-Source On-Resistance
13
20
0.75
VDS = VGS, ID = 250μA
VGS = 10V, ID = 8.2A
VGS = 4.5V, ID = 6.7A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
tF
tRR
QRR
-
869
226
15
1.1
6.2
13.9
3.0
1.9
3.5
4.6
10.8
3.5
-
ns
ns
nC
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
20.3
11.4
V
Test Condition
VDS = 30V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 30V, ID = 8.2A
VDD = 30V, VGS = 10V,
ID = 8.2A, Rg = 6Ω
IF = 8.2A, di/dt = 100A/μs
IF = 8.2A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMT6018LDR
Document number: DS36808 Rev. 2 - 2
2 of 6
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October 2016
© Diodes Incorporated
DMT6018LDR
30.0
30
VGS = 10V
VGS = 4.0V
VDS = 5.0V
VGS = 4.5V
)A
( 20
T
N
E
R
R
U 15
C
N
IA
R 10
D
,D
I
5
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
20.0
15.0
VGS = 3.5V
10.0
5.0
VGS = 2.8V
T A = 85°C
TA = 25°C
TA = -55°C
0.50
1.00
1.50
2.00
2.50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3.00
VGS = 4.5V
VGS = 10V
0.01
0.001
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
TA = 125°C
VGS = 3.0V
0.1
0.05
TA = 150°C
0
0.0
0.00
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VGS , GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.10
0.09
0.08
0.07
0.06
0.05
0.04
ID = 6.7A
0.03
0.02
ID = 8.2A
0.01
0.00
30
2
4
6
8
10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
2
VGS = 4.5V
0.045
0.04
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCED INFORMATION
25.0
TA = 150癈
150°C
TA = 125°
125癈C
0.035
0.03
T A = 85°
85癈C
0.025
VGS = 4.5V
ID = 5A
1.2
T A = 25°
25癈C
0.02
VGS = 10V
ID = 10A
1.6
T A = -55癈
-55°C
0.015
0.8
0.01
0.005
0
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMT6018LDR
Document number: DS36808 Rev. 2 - 2
30
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0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
October 2016
© Diodes Incorporated
2.8
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.05
0.045
0.04
0.035
VGS = 4.5V
ID = 5A
0.03
0.025
0.02
0.015
VGS = 10 V
ID = 10A
0.01
0.005
2.6
2.4
2.2
1.8
ID = 250礎
A
1.6
1.4
1.2
1
0.8
-50
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
30
ID = 1mA
2
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Junction
Ambient Temperature
CT, JUNCTION CAPACITANCE (pF)
10000
25
C iss
IS, SOURCE CURRENT (A)
1000
20
15
TA = 150°
150癈C
TA = 125°
125癈C
10
TA = 85°
85癈
C
TA = 25°
25癈
C
5
Coss
100
Crss
10
TA = -55°
-55癈
C
f = 1MHz
0
1
0
0
0.3
0.6
0.9
1.2
1.5
V SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
24
100
10
PW =100µs
RDS(ON)
Limited
8
ID, DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCED INFORMATION
DMT6018LDR
VDS = 30V
ID = 8.2A
6
4
2
0
0
3
6
9
12
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMT6018LDR
Document number: DS36808 Rev. 2 - 2
15
10
1
PW =1ms
PW =10ms
0.1
PW =100ms
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 10V
PW =1s
PW =10s
DC
0.01
0.1
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1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
October 2016
© Diodes Incorporated
DMT6018LDR
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCED INFORMATION
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
°C/W
RJA = 72癈
/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-DFN3030-8 (Type H)
A3
A1
A
Seating Plane
D
e
Z1
K
E
K1
E2
D2
L
Z
DMT6018LDR
Document number: DS36808 Rev. 2 - 2
b(8x)
5 of 6
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V-DFN3030-8
(Type H)
Dim Min Max Typ
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203 BSC
b
0.27 0.37 0.32
D
2.95 3.05 3.00
D2 2.50 2.70 2.60
e
0.65 BSC
E
2.95 3.05 3.00
E2 0.59 0.79 0.69
L
0.30 0.40 0.35
K
0.28 BSC
K1
0.36 BSC
Z
0.365 BSC
Z1
0.24 BSC
All Dimensions in mm
October 2016
© Diodes Incorporated
DMT6018LDR
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-DFN3030-8 (Type H)
X3
C
ADVANCED INFORMATION
G
Dimensions Value (in mm)
C
0.650
G
0.180
G1
0.260
X
0.420
X1
1.920
X2
2.700
X3
2.495
Y
0.550
Y1
0.790
Y2
3.300
X2
Y1
Y2
G1
Y1
Y
X1
X
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Copyright © 2016, Diodes Incorporated
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DMT6018LDR
Document number: DS36808 Rev. 2 - 2
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October 2016
© Diodes Incorporated
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