INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -19 A IDM Drain Current-Single Pulsed -68 A PD Total Dissipation @TC=25℃ 68 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 2.2 ℃/W Rth(j-a) Channel-to-ambient thermal resistance 62 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA -55 VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA -2.0 RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -10A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT V -4.0 V 0.1 Ω ±100 nA VDS= -55V; VGS= 0V -25 μA Is= -10A; VGS = 0V -1.6 V 2 isc & iscsemi is registered trademark