Maxim MAX3372EEBLT 15kv esd-protected, 1ua, 16mbps, dual quad low-voltage level translators in ucsp Datasheet

MAX3372E–MAX3379E/
MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
General Description
The MAX3372E–MAX3379E and MAX3390E–MAX3393E
±15kV ESD-protected level translators provide the level
shifting necessary to allow data transfer in a multivoltage
system. Externally applied voltages, VCC and VL, set the
logic levels on either side of the device. A low-voltage
logic signal present on the VL side of the device appears
as a high-voltage logic signal on the VCC side of the
device, and vice-versa. The MAX3374E/MAX3375E/
MAX3376E/MAX3379E and MAX3390E–MAX3393E unidirectional level translators level shift data in one direction
(VL → VCC or VCC → VL) on any single data line. The
MAX3372E/MAX3373E and MAX3377E/MAX3378E bidirectional level translators utilize a transmission-gatebased design (Figure 2) to allow data translation in either
direction (V L ↔ V CC ) on any single data line. The
MAX3372E–MAX3379E and MAX3390E–MAX3393E
accept VL from +1.2V to +5.5V and VCC from +1.65V to
+5.5V, making them ideal for data transfer between lowvoltage ASICs/PLDs and higher voltage systems.
All devices in the MAX3372E–MAX3379E, MAX3390E–
MAX3393E family feature a three-state output mode that
reduces supply current to less than 1µA, thermal shortcircuit protection, and ±15kV ESD protection on the VCC
side for greater protection in applications that route signals externally. The MAX3372E/MAX3377E operate at a
guaranteed data rate of 230kbps. Slew-rate limiting
reduces EMI emissions in all 230kbps devices. The
MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E operate at a guaranteed data rate
of 8Mbps over the entire specified operating voltage
range. Within specific voltage domains, higher data rates
are possible. (See the Timing Characteristics table.)
The MAX3372E–MAX3376E are dual level shifters
available in 3 x 3 UCSP™, 8-pin TDFN, and 8-pin
SOT23-8 packages. The MAX3377E/MAX3378E/
MAX3379E and MAX3390E–MAX3393E are quad level
shifters available in 3 x 4 UCSP, 14-pin TDFN, and 14pin TSSOP packages.
________________________Applications
MICROWIRE®,
I2C
SPI,
and
Level
Translation
Low-Voltage ASIC Level Translation
Smart Card Readers
Cell-Phone Cradles
Portable POS Systems
Portable Communication Devices
Low-Cost Serial Interfaces
Cell Phones
GPS
Telecommunications Equipment
Features
o Guaranteed Data Rate Options
230kbps
8Mbps (+1.2V ≤ VL ≤ VCC ≤ +5.5V)
10Mbps (+1.2V ≤ VL ≤ VCC ≤ +3.3V)
16Mbps (+1.8V ≤ VL ≤ VCC ≤ +2.5V and
+2.5V ≤ VL ≤ VCC +3.3V)
o Bidirectional Level Translation
(MAX3372E/MAX3373E and
MAX3377E/MAX3378E)
o Operation Down to +1.2V on VL
o ±15kV ESD Protection on I/O VCC Lines
o Ultra-Low 1µA Supply Current in Three-State
Output Mode
o Low-Quiescent Current (130µA typ)
o UCSP, TDFN, SOT23, and TSSOP Packages
o Thermal Short-Circuit Protection
Ordering Information
PART
TEMP RANGE
PINPACKAGE
MAX3372EEKA+T
-40°C to +85°C
8 SOT23
+Denotes a lead-free package.
T = Tape and reel.
Ordering Information continued at end of data sheet.
Selector Guide appears at end of data sheet.
UCSP is a trademark of Maxim Integrated Products, Inc.
MICROWIRE is a registered trademark of National
Semiconductor Corp.
Pin Configurations
TOP VIEW
+
I/O VL1
1
14
VCC
I/O VL2
2
13
I/0 VCC1
MAX3377E/
MAX3378E THREE-STATE 3
12
I/0 VCC2
N.C.
4
11
N.C.
I/O VL3
5
10
VL
I/O VL4
6
9
I/0 VCC3
GND
7
8
I/0 VCC4
TDFN-14
(3mm x 3mm)
Pin Configurations continued at end of data sheet.
For pricing, delivery, and ordering information, please contact Maxim Direct
at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com.
19-2328; Rev 3; 1/13
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND.)
VCC ...........................................................................-0.3V to +6V
I/O VCC_......................................................-0.3V to (VCC + 0.3V)
I/O VL_ ...........................................................-0.3V to (VL + 0.3V)
THREE-STATE...............................................-0.3V to (VL + 0.3V)
Short-Circuit Duration I/O VL, I/O VCC to GND...........Continuous
Short-Circuit Duration I/O VL or I/O VCC to GND
Driven from 40mA Source
(except MAX3372E and MAX3377E) .....................Continuous
Continuous Power Dissipation (TA = +70°C)
8-Pin SOT23 (derate 5.6mW/°C above +70°C)........444.4mW
8-Pin TDFN (derate 18.5mW/°C above +70°C) ........1482mW
3 x 3 UCSP (derate 4.7mW/°C above +70°C) ............379mW
3 x 4 UCSP (derate 6.5mW/°C above +70°C) ............520mW
14-Pin TSSOP (derate 9.1mW/°C above +70°C) ........727mW
14-Pin TDFN (derate 18.5mW/°C above +70°C) ......1482mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VCC = +1.65V to +5.5V, VL = +1.2V to (VCC + 0.3V), GND = 0, I/O VL_ and I/O VCC_ unconnected, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLIES
VL Supply Range
VCC Supply Range
Supply Current from VCC
Supply Current from VL
VCC Three-State Output Mode
Supply Current
VL Three-State Output Mode
Supply Current
Three-State Output Mode
Leakage Current
I/O VL_ and I/O VCC_
VL
1.2
5.5
V
VCC
1.65
5.50
V
IQVCC
130
300
µA
IQVL
16
100
µA
ITHREE-STATE-VCC
TA = +25°C, THREE-STATE = GND
0.03
1
µA
ITHREE-STATE-VL
TA = +25°C, THREE-STATE = GND
0.03
1
µA
ITHREE-STATE-LKG
TA = +25°C, THREE-STATE = GND
0.02
1
µA
TA = +25°C
0.02
1
µA
THREE-STATE Pin Input Leakage
ESD PROTECTION
IEC 1000-4-2 Air-Gap Discharge
I/O VCC (Note 3)
±8
IEC 1000-4-2 Contact Discharge
±8
Human Body Model
±15
kV
LOGIC-LEVEL THRESHOLDS (MAX3372E/MAX3377E)
2
I/O VL_ Input-Voltage High
VIHL
I/O VL_ Input-Voltage Low
VILL
VL - 0.2
V
0.15
V
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
ELECTRICAL CHARACTERISTICS (continued)
(VCC = +1.65V to +5.5V, VL = +1.2V to (VCC + 0.3V), GND = 0, I/O VL_ and I/O VCC_ unconnected, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
I/O VCC_ Input-Voltage High
VIHC
I/O VCC_ Input-Voltage Low
VILC
I/O VL_ Output-Voltage High
VOHL
I/O VL_ source current = 20µA,
I/O VCC_ > VCC - 0.4V
I/O VL_ Output-Voltage Low
VOLL
I/O VL_ sink current = 20µA,
I/O VCC_ < 0.15V
I/O VCC_ Output-Voltage High
VOHC
I/O VCC_ source current = 20µA,
I/O VL _ > VL - 0.2V
I/O VCC_ Output-Voltage Low
VOLC
I/O VCC_ sink current = 20µA,
I/O VL_ < 0.15V
THREE-STATE Input-Voltage
High
VIL-THREE-STATE
THREE-STATE Input-Voltage
Low
VIL-THREE-STATE
MIN
TYP
MAX
UNITS
0.15
V
VCC - 0.4
V
0.67 ✕ VL
V
0.4
0.67 ✕ VCC
V
V
0.4
VL - 0.2
V
V
0.15
V
LOGIC-LEVEL THRESHOLDS (MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E)
I/O VL_ Input-Voltage High
VIHL
I/O VL_ Input-Voltage Low
VILL
I/O VCC_ Input-Voltage High
VIHC
I/O VCC_ Input-Voltage Low
VILC
I/O VL_ Output-Voltage High
VOHL
I/O VL_ source current = 20µA,
I/O VCC_ ≥ VCC - 0.4V
I/O VL_ Output-Voltage Low
VOLL
I/O VL_ sink current = 1mA,
I/O VCC_ ≤ 0.15V
I/O VCC_ Output-Voltage High
VOHC
I/O VCC_ source current = 20µA,
I/O VL_ ≥ VL - 0.2V
I/O VCC_ Output-Voltage Low
VOLC
I/O VCC_ sink current = 1mA,
I/O VL_ ≤ 0.15V
THREE-STATE Input-Voltage
High
VIH-THREE-STATE
THREE-STATE Input-Voltage
Low
VIL-THREE-STATE
Maxim Integrated
VL - 0.2
V
0.15
V
0.15
V
VCC - 0.4
V
0.67 ✕ VL
V
0.4
0.67 ✕ VCC
V
V
0.4
VL - 0.2
V
V
0.15
V
3
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
TIMING CHARACTERISTICS
(VCC = +1.65V to +5.5V, VL = +1.2V to (VCC + 0.3V), GND = 0, RLOAD = 1MΩ, I/O test signal of Figure 1, TA = TMIN to TMAX, unless
otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MAX3372E/MAX3377E (CLOAD = 50pF)
I/O VCC_ Rise Time (Note 4)
tRVCC
1100
I/O VCC_ Fall Time (Note 5)
tFVCC
1000
ns
I/O VL _ Rise Time (Note 4)
tRVL
600
ns
I/O VL _ Fall Time (Note 5)
tFVL
1100
ns
Propagation Delay
Channel-to-Channel Skew
ns
I/OVL-VCC
Driving I/O VL _
1.6
I/OVCC-VL
Driving I/O VCC_
1.6
Each translator equally loaded
500
tSKEW
Maximum Data Rate
CL = 25pF
230
µs
ns
kbps
MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E (CLOAD = 15pF, Driver Output Impedance ≤ 50Ω)
+1.2V ≤ VL ≤ VCC ≤ +5.5V
I/O VCC_ Rise Time (Note 4)
tRVCC
I/O VCC_ Fall Time (Note 5)
tFVCC
I/O VL _ Rise Time (Note 4)
tRVL
I/O VL _ Fall Time (Note 5)
tLFV
I/OVL-VCC
7
25
170
400
6
37
Open-drain driving
20
50
8
30
Open-drain driving
180
400
3
30
Open-drain driving
30
60
5
30
210
1000
4
30
190
1000
Open-drain driving
Driving I/O VL _
Propagation Delay
I/OVCC-VL
Channel-to-Channel Skew
Maximum Data Rate
4
tSKEW
Driving I/O VCC_
Each translator
equally loaded
Open-drain driving
Open-drain driving
Open-drain driving
20
Open-drain driving
50
ns
ns
ns
ns
ns
ns
8
Mbps
500
kbps
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
TIMING CHARACTERISTICS (continued)
(VCC = +1.65V to +5.5V, VL = +1.2V to (VCC + 0.3V), GND = 0, RLOAD = 1MΩ, I/O test signal of Figure 1, TA = TMIN to TMAX, unless
otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
+1.2V ≤ VL ≤ VCC ≤ +3.3V
I/O VCC_ Rise Time (Note 4)
tRVCC
25
ns
I/O VCC_ Fall Time (Note 5)
tFVCC
30
ns
I/O VL _ Rise Time (Note 4)
tRVL
30
ns
I/O VL _ Fall Time (Note 5)
tFVL
30
ns
Propagation Delay
Channel-to-Channel Skew
I/OVL-VCC
Driving I/O VL _
20
I/OVCC-VL
Driving I/O VCC_
Each translator equally loaded
20
tSKEW
Maximum Data Rate
10
10
ns
ns
Mbps
+2.5V ≤ VL ≤ VCC ≤ +3.3V
I/O VCC_ Rise Time (Note 4)
tRVCC
15
ns
I/O VCC_ Fall Time (Note 5)
tFVCC
15
ns
I/O VL _ Rise Time (Note 4)
tRVL
15
ns
I/O VL _ Fall Time (Note 5)
tFVL
15
ns
Propagation Delay
Channel-to-Channel Skew
I/OVL-VCC
Driving I/O VL _
15
I/OVCC-VL
Driving I/O VCC_
15
Each translator equally loaded
10
tSKEW
Maximum Data Rate
16
ns
ns
Mbps
+1.8V ≤ VL ≤ VCC ≤ +2.5V
I/O VCC_ Rise Time (Note 4)
tRVCC
15
ns
I/O VCC_ Fall Time (Note 5)
tFVCC
15
ns
I/O VL _ Rise Time (Note 4)
tRVL
15
ns
I/O VL _ Fall Time (Note 5)
tFVL
15
ns
Propagation Delay
Channel-to-Channel Skew
Maximum Data Rate
I/OVL-VCC
Driving I/O VL _
15
I/OVCC-VL
Driving I/O VCC_
15
Each translator equally loaded
10
tSKEW
16
ns
ns
Mbps
Note 1: All units are 100% production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design
and not production tested.
Note 2: For normal operation, ensure VL < (VCC + 0.3V). During power-up, VL > (VCC + 0.3V) will not damage the device.
Note 3: To ensure maximum ESD protection, place a 1µF capacitor between VCC and GND. See Applications Circuits.
Note 4: 10% to 90%
Note 5: 90% to 10%
Maxim Integrated
5
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Typical Operating Characteristics
(RLOAD = 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and
500kbps TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
VCC SUPPLY CURRENT vs. SUPPLY VOLTAGE
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
300
500kbps, OPEN-DRAIN, CLOAD = 15pF
230kbps, CLOAD = 50pF
100
500kbps, OPEN-DRAIN, CLOAD = 15pF
2.5
2.0
8Mbps, CLOAD = 15pF
1.5
1.0
230kbps, CLOAD = 50pF
150
3.30
3.85
4.40
4.95
0
1.65
5.50
2.20
2.75
3.30
4.40
4.95
5.50
-40
350
300
SUPPLY CURRENT (μA)
1200
8Mbps, CLOAD = 15pF
1000
500kbps, OPEN-DRAIN, CLOAD = 15pF
600
8Mbps
250
200
150
500kbps, OPEN-DRAIN
100
230kbps, CLOAD = 50pF
0
35
85
60
25
40
55
70
85
16
DATA RATE = 230kbps
tLH
10
8
tHL
6
4
500
40
50
70
100
85
tLH
200
150
DATA RATE = 500kbps,
OPEN-DRAIN
100
tHL
50
DATA RATE = 8Mbps
0
0
30
55
2
tHL
0
20
40
250
RISE/FALL TIME (ns)
RISE/FALL TIME (ns)
14
12
25
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc08
18
MAX3372E toc07
1000
10
CAPACITIVE LOAD (pF)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
tLH
230kbps
100
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
1500
500kbps, OPEN-DRAIN
1000
0
10
CAPACITIVE LOAD (pF)
2000
8Mbps
1500
500
TEMPERATURE (°C)
2500
85
60
2000
0
10
35
2500
230kbps
50
200
-15
10
VCC SUPPLY CURRENT vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc05
1400
-40
-15
TEMPERATURE (°C)
VL SUPPLY CURRENT vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc04
1600
400
3.85
VCC (V)
VCC SUPPLY CURRENT vs. TEMPERATURE
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
800
230kbps, CLOAD = 50pF
MAX3372E toc06
2.75
SUPPLY CURRENT (μA)
2.20
500kbps, OPEN-DRAIN, CLOAD = 15pF
200
50
VCC (V)
SUPPLY CURRENT (μA)
8Mbps, CLOAD = 15pF
250
0
1.65
RISE/FALL TIME (ns)
300
100
0.5
0
60
70
80
CAPACITIVE LOAD (pF)
6
350
MAX3372E toc09
200
3.0
SUPPLY CURRENT (μA)
400
400
MAX3372E toc02
8Mbps, CLOAD = 15pF
SUPPLY CURRENT (mA)
SUPPLY CURRENT (μA)
500
3.5
MAX3372E toc01
600
VL SUPPLY CURRENT vs. TEMPERATURE
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
MAX3372E toc03
VL SUPPLY CURRENT vs. SUPPLY VOLTAGE
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
90
100
10
15
20
25
30
35
40
CAPACITIVE LOAD (pF)
45
50
10
15
20
25
30
35
40
45
50
CAPACITIVE LOAD (pF)
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Typical Operating Characteristics (continued)
(RLOAD = 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and
500kbps TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
tPHL
500
400
300
tPLH
200
DATA RATE = 230kbps
tPHL
9
6
300
200
DATA RATE = 500kbps,
OPEN-DRAIN
150
100
tPHL
50
tPLH
0
0
20
30
40
50
60
70
80
90
0
100
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +2.5V, VL = +1.8V)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +2.5V, VL = +1.8V)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +2.5V, VL = +1.8V)
12
tLH
1500
1000
DATA RATE = 230kbps
10
tLH
8
6
tHL
4
300
tLH
250
RISE/FALL TIME (ns)
RISE/FALL TIME (ns)
2000
DATA RATE = 8Mbps
MAX3372E toc15
14
MAX3372E toc13
2500
200
DATA RATE = 500kbps,
OPEN-DRAIN
150
100
tHL
500
50
2
tHL
0
0
0
20
30
40
50
60
70
80
90
100
10
15
20
25
30
35
40
45
10
50
15
20
25
30
35
40
45
50
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
tHL
1000
8
tLH
6
250
RISE/FALL TIME (ns)
10
4
MAX3372E toc18
DATA RATE = 8Mbps
RISE/FALL TIME (ns)
2000
300
MAX3372E toc17
DATA RATE = 230kbps
1500
12
MAX3372E toc16
2500
RISE/FALL TIME (ns)
tPLH
250
3
MAX3372E toc12
12
100
RISE/FALL TIME (ns)
MAX3372E toc11
DATA RATE = 8Mbps
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc14
PROPAGATION DELAY (ns)
600
15
PROPAGATION DELAY (ns)
MAX3372E toc10
700
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
PROPAGATION DELAY (ns)
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
tLH
200
DATA RATE = 500kbps,
OPEN-DRAIN
150
100
tHL
500
tHL
2
tLH
0
20
30
40
50
60
0
0
70
80
CAPACITIVE LOAD (pF)
Maxim Integrated
50
90
100
10
15
20
25
30
35
40
CAPACITIVE LOAD (pF)
45
50
10
15
20
25
30
35
40
45
50
CAPACITIVE LOAD (pF)
7
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Typical Operating Characteristics (continued)
(RLOAD = 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and
500kbps TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
tPHL
400
300
200
100
tPHL
4
3
2
tPLH
300
250
30
40
50
60
70
80
90
10
100
200
DATA RATE = 500kbps,
OPEN-DRAIN
150
100
tPHL
0
0
20
tPLH
50
1
tPHL
15
20
25
30
35
40
45
10
50
15
20
25
30
35
40
45
50
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +2.5V, VL = +1.8V)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +2.5V, VL = +1.8V)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +2.5V, VL = +1.8V)
tHL
1000
500
8
tLH
6
4
40
50
60
70
80
90
100
tLH
150
DATA RATE = 500kbps,
OPEN-DRAIN
tHL
50
0
30
200
100
tLH
20
250
tHL
2
0
300
RISE/FALl TIME (ns)
10
MAX3373E toc24
DATA RATE = 8Mbps
RISE/FALL TIME (ns)
2000
350
MAX3372E toc23
DATA RATE = 230kbps
1500
12
MAX3372E toc22
2500
0
10
20
30
40
50
10
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
20
30
40
MAX3372E toc26
RAIL-TO-RAIL DRIVING
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V,
CLOAD = 15pF, DATA RATE = 8Mbps)
I/O VL_
1V/div
I/O VL_
1V/div
I/O VCC_
2V/div
I/O VCC_
2V/div
1μs/div
50
CAPACITIVE LOAD (pF)
MAX3372E toc25
RAIL-TO-RAIL DRIVING
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V,
CLOAD = 50pF, DATA RATE = 230kbps)
8
MAX3372E toc21
5
0
RISE/FALL TIME (ns)
MAX3372E toc20
DATA RATE = 8Mbps
PROPAGATION DELAY (ns)
500
6
PROPAGATION DELAY (ns)
DATA RATE = 230kbps
600
PROPAGATION DELAY (ns)
MAX3372E toc19
700
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
200ns/div
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Typical Operating Characteristics (continued)
(RLOAD = 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and
500kbps TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
OPEN-DRAIN DRIVING
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V,
CLOAD = 15pF, DATA RATE = 500kbps)
EXITING THREE-STATE OUTPUT MODE
(VCC = +3.3V, VL = +1.8V, CLOAD = 50pF)
MAX3372E toc27
MAX3372E toc28
2V/div
I/O VCC_
I/O VL_
1V/div
1V/div
I/O VL_
I/O VCC_
2V/div
1V/div
THREE-STATE
2μs/div
200ns/div
Pin Description
PIN
3x4
UCSP
14
SOT23-8
TSSOP
A1
2
A2
A3
3x3
UCSP
5
C2
3
4
4
—
A4
5
—
B1
14
B2
1
B3
8 TDFN- 14 TDFNEP
EP
NAME
FUNCTION
6
1
I/O VL1
Input/Output 1. Referenced to VL. (Note 6)
C3
8
2
I/O VL2
Input/Output 2. Referenced to VL. (Note 6)
—
—
5
I/O VL3
Input/Output 3. Referenced to VL. (Note 6)
—
—
6
I/O VL4
Input/Output 4. Referenced to VL. (Note 6)
7
A1
4
14
VCC
VCC Input Voltage +1.65V ≤ VCC ≤ +5.5V.
3
C1
7
10
VL
8
6
B1
5
3
THREESTATE
Logic Input Voltage +1.2V ≤ VL ≤ (VCC + 0.3V)
Three-State Output Mode Enable. Pull THREE-STATE low
to place device in three-state output mode. I/O VCC_ and
I/O VL_ are high impedance in three-state output mode.
Note: Logic referenced to VL (for logic thresholds see the
Electrical Characteristics table).
B4
7
2
B3
2
7
GND
C1
13
8
A2
3
13
I/O VCC1
Ground
Input/Output 1. Referenced to VCC. (Note 6)
C2
12
1
A3
1
12
I/O VCC2
Input/Output 2. Referenced to VCC. (Note 6)
C3
11
—
—
—
9
I/O VCC3
Input/Output 3. Referenced to VCC. (Note 6)
C4
10
—
—
—
8
I/O VCC4
Input/Output 4. Referenced to VCC. (Note 6)
—
6, 9
—
B2
—
4, 11
N.C.
—
—
—
—
—
—
EP
No Connection. Not internally connected.
Exposed Pad. Connect EP to ground.
Note 6: For unidirectional devices (MAX3374E/MAX3375E/MAX3376E/MAX3379E and MAX3390E–MAX3393E) see the Pin
Configurations for input/output configurations.
Maxim Integrated
9
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Detailed Description
The MAX3372E–MAX3379E and MAX3390E–MAX3393E
ESD-protected level translators provide the level shifting
necessary to allow data transfer in a multivoltage system.
Externally applied voltages, VCC and VL, set the logic levels on either side of the device. A low-voltage logic signal
present on the VL side of the device appears as a highvoltage logic signal on the VCC side of the device, and
vice-versa. The MAX3374E/MAX3375E/MAX3376E/
MAX3379E and MAX3390E–MAX3393E unidirectional
level translators level shift data in one direction (VL →
V CC or V CC → V L ) on any single data line. The
MAX3372E/MAX3373E and MAX3377E/MAX3378E bidirectional level translators utilize a transmission-gatebased design (see Figure 2) to allow data translation in
either direction (VL ↔ VCC) on any single data line. The
MAX3372E–MAX3379E and MAX3390E–MAX3393E
VL
accept VL from +1.2V to +5.5V and VCC from +1.65V to
+5.5V, making them ideal for data transfer between lowvoltage ASICs/PLDs and higher voltage systems.
All devices in the MAX3372E–MAX3379E, MAX3390E–
MAX3393E family feature a three-state output mode that
reduces supply current to less than 1µA, thermal shortcircuit protection, and ±15kV ESD protection on the VCC
side for greater protection in applications that route signals externally. The MAX3372E/MAX3377E operate at a
guaranteed data rate of 230kbps. Slew-rate limiting
reduces EMI emissions in all 230kbps devices. The
MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E operate at a guaranteed data rate
of 8Mbps over the entire specified operating voltage
range. Within specific voltage domains, higher data rates
are possible. (See the Timing Characteristics table.)
VL
VCC
VL
VCC
VL
VCC
MAX3372E–MAX3379E
AND MAX3390E–MAX3393E
MAX3372E–MAX3379E
AND MAX3390E–MAX3393E
DATA
DATA
GND
RLOAD
I/O VL_
(tRISE,
tFALL < 10ns)
CLOAD
CLOAD
RLOAD
GND
I/O VCC_
(tRISE,
tFALL < 10ns)
tPD-VCC-LH
tPD-VCC-HL
tRVCC
tFVCC
I/O VCC_
tPD-VL-LH
tPD-VL-HL
tRVL
tFVL
I/O VL _
Figure 1a. Rail-to-Rail Driving I/O VL
10
I/O VCC_
I/O VL _
I/O VCC_
I/O VL _
VCC
Figure 1b. Rail-to-Rail Driving I/O VCC
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Level Translation
For proper operation ensure that +1.65V ≤ V CC ≤
+5.5V, +1.2V ≤ VL ≤ +5.5V, and VL ≤ (VCC + 0.3V).
During power-up sequencing, VL ≥ (VCC + 0.3V) will
not damage the device. During power-supply sequencing, when VCC is floating and VL is powering up, a current may be sourced, yet the device will not latch up.
The speed-up circuitry limits the maximum data rate for
devices in the MAX3372E–MAX3379E, MAX3390E–
MAX3393E family to 16Mbps. The maximum data rate
also depends heavily on the load capacitance (see the
Typical Operating Characteristics), output impedance
of the driver, and the operational voltage range (see the
Timing Characteristics table).
Speed-Up Circuitry
The MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E feature a one-shot generator that
decreases the rise time of the output. When triggered,
MOSFETs PU1 and PU2 turn on for a short time to pull up
VL
I/O VL_ and I/O VCC_ to their respective supplies (see
Figure 2b). This greatly reduces the rise time and propagation delay for the low-to-high transition. The scope
photo of Rail-to-Rail Driving for 8Mbps Operation in the
Typical Operating Characteristics shows the speed-up
circuitry in operation.
Rise-Time Accelerators
The MAX3373E–MAX3376E/MAX3378E/MAX3379E and
the MAX3390E–MAX3393E have internal rise-time
accelerators allowing operation up to 16Mbps. The
rise-time accelerators are present on both sides of the
device and act to speed up the rise time of the input
and output of the device, regardless of the direction of
the data. The triggering mechanism for these accelerators is both level and edge sensitive. To prevent false
triggering of the rise-time accelerators, signal fall times
of less than 20ns/V are recommended for both the
inputs and outputs of the device. Under less noisy conditions, longer signal fall times may be acceptable.
VL
VCC
VL
VCC
VL
VCC
MAX3373E–MAX3376E,
MAX3378E/MAX3379E
AND MAX3390E–MAX3393E
MAX3372E–MAX3379E
AND MAX3390E–MAX3393E
DATA
DATA
CLOAD
GND
I/O VCC_
I/O VL_
I/O VCC_
I/O VL_
VCC
CLOAD
GND
RLOAD
RLOAD
I/O VCC_
I/O VL_
tPD-VCC-HL
tPD-VL-LH
tPD-VCC-LH
tPD-VL-HL
I/O VL_
I/O VCC_
tRVCC
Figure 1c. Open-Drain Driving I/O VCC
Maxim Integrated
tFVCC
tRVL
tFVL
Figure 1d. Open-Drain Driving I/O VL
11
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Three-State Output Mode
at I/O VL_ to exceed (VL + 0.3V), or the voltage at I/O
VCC_ to exceed (VCC + 0.3V).
Pull THREE-STATE low to place the MAX3372E–
MAX3379E and MAX3390E–MAX3393E in three-state output mode. Connect THREE-STATE to VL (logic-high) for
normal operation. Activating the three-state output mode
disconnects the internal 10kΩ pullup resistors on the I/O
VCC and I/O VL lines. This forces the I/O lines to a highimpedance state, and decreases the supply current to
less than 1µA. The high-impedance I/O lines in threestate output mode allow for use in a multidrop network.
When in three-state output mode, do not allow the voltage
Thermal Short-Circuit Protection
Thermal overload detection protects the MAX3372E–
MAX3379E and MAX3390E–MAX3393E from short-circuit
fault conditions. In the event of a short-circuit fault, when
the junction temperature (TJ) reaches +152°C, a thermal
sensor signals the three-state output mode logic to force
the device into three-state output mode. When TJ has
cooled to +142°C, normal operation resumes.
VCC
VL
P
P
GATE
BIAS
I/O VL
I/O VCC
N
Figure 2a. Functional Diagram, MAX3372E/MAX3377E (1 I/O line)
VCC
VL
PU1
ONE-SHOT
BLOCK
ONE-SHOT
BLOCK
PU2
GATE
BIAS
I/O VL_
N
I/O VCC_
Figure 2b. Functional Diagram, MAX3373E/MAX3378E (1 I/O line)
12
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
±15kV ESD Protection
As with all Maxim devices, ESD-protection structures are
incorporated on all pins to protect against electrostatic
discharges encountered during handling and assembly.
The I/O VCC lines have extra protection against static
electricity. Maxim’s engineers have developed state-ofthe-art structures to protect these pins against ESD of
±15kV without damage. The ESD structures withstand
high ESD in all states: normal operation, three-state
output mode, and powered down. After an ESD event,
Maxim’s E versions keep working without latchup,
whereas competing products can latch and must be
powered down to remove latchup.
ESD protection can be tested in various ways. The I/O
VCC lines of this product family are characterized for
protection to the following limits:
1) ±15kV using the Human Body Model
2) ±8kV using the Contact Discharge method specified
in IEC 1000-4-2
3) ±10kV using IEC 1000-4-2’s Air-Gap Discharge
method
ESD Test Conditions
ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report that documents
test setup, test methodology, and test results.
Human Body Model
Figure 3a shows the Human Body Model and Figure 3b
shows the current waveform it generates when discharged into a low impedance. This model consists of
a 100pF capacitor charged to the ESD voltage of interest, which is then discharged into the test device
through a 1.5kΩ resistor.
RC 1MΩ
CHARGE-CURRENTLIMIT RESISTOR
IEC 1000-4-2
The IEC 1000-4-2 standard covers ESD testing and
performance of finished equipment; it does not specifically refer to integrated circuits. The MAX3372E–
MAX3379E and MAX3390E–MAX3393E help to design
equipment that meets Level 3 of IEC 1000-4-2, without
the need for additional ESD-protection components.
The major difference between tests done using the
Human Body Model and IEC 1000-4-2 is higher peak
current in IEC 1000-4-2, because series resistance is
lower in the IEC 1000-4-2 model. Hence, the ESD withstand voltage measured to IEC 1000-4-2 is generally
lower than that measured using the Human Body Model.
Figure 4a shows the IEC 1000-4-2 model, and Figure 4b
shows the current waveform for the ±8kV, IEC 1000-4-2,
Level 4, ESD contact-discharge test.
The air-gap test involves approaching the device with a
charged probe. The contact-discharge method connects the probe to the device before the probe
is energized.
Machine Model
The Machine Model for ESD tests all pins using a
200pF storage capacitor and zero discharge resistance. Its objective is to emulate the stress caused by
contact that occurs with handling and assembly during
manufacturing. Of course, all pins require this protection during manufacturing, not just inputs and outputs.
Therefore, after PCB assembly, the Machine Model is
less relevant to I/O ports.
RD 1500Ω
IP 100%
90%
DISCHARGE
RESISTANCE
Ir
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
AMPERES
HIGHVOLTAGE
DC
SOURCE
Cs
100pF
STORAGE
CAPACITOR
DEVICEUNDERTEST
36.8%
10%
0
0
Figure 3a. Human Body ESD Test Model
Maxim Integrated
tRL
TIME
tDL
CURRENT WAVEFORM
Figure 3b. Human Body Current Waveform
13
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
I
100%
90%
CHARGE-CURRENTLIMIT RESISTOR
HIGHVOLTAGE
DC
SOURCE
Cs
150pF
RD 330Ω
DISCHARGE
RESISTANCE
I PEAK
RC 50MΩ to 100MΩ
DEVICEUNDERTEST
STORAGE
CAPACITOR
10%
t
t r = 0.7ns to 1ns
30ns
60ns
Figure 4a. IEC 1000-4-2 ESD Test Model
Figure 4b. IEC 1000-4-2 ESD Generator Current Waveform
Applications Information
ASIC and an I2C device. A typical application involves
interfacing a low-voltage microprocessor to a 3V or 5V
D/A converter, such as the MAX517.
Power-Supply Decoupling
To reduce ripple and the chance of transmitting incorrect data, bypass VL and VCC to ground with a 0.1µF
capacitor. See the Typical Operating Circuit. To ensure
full ±15kV ESD protection, bypass VCC to ground with a
1µF capacitor. Place all capacitors as close to the
power-supply inputs as possible.
Push-Pull vs. Open-Drain Driving
All devices in the MAX3372E–MAX3379E and
MAX3390E–MAX3393E family may be driven in a pushpull configuration. The MAX3373E–MAX3376E/
MAX3378E/MAX3379E and MAX3390E–MAX3393E
include internal 10kΩ resistors that pull up I/O VL_ and
I/O VCC_ to their respective power supplies, allowing
operation of the I/O lines with open-drain devices. See
the Timing Characteristics table for maximum data rates
when using open-drain drivers.
I2C Level Translation
The MAX3373E–MAX3376E, MAX3378E/MAX3379E
and MAX3390E–MAX3393E level-shift the data present
on the I/O lines between +1.2V and +5.5V, making
them ideal for level translation between a low-voltage
Typical Operating Circuit
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
DATA
14
+3.3V
SYSTEM
MAX3378E–MAX3383E
I/O VL_
I/O VCC_
DATA
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Applications Circuits
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3372E/MAX3373E
DATA
I/O VL1
I/O VCC1
I/O VL2
I/O VCC2
DATA
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3374E
I VL1
DATA
Maxim Integrated
I VL2
O VCC1
O VCC2
DATA
15
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Applications Circuits (continued)
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3375E
DATA
O VL1
I VCC1
I VL2
O VCC2
DATA
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3376E
DATA
16
O VL1
I VCC1
O VL2
I VCC2
DATA
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Applications Circuits (continued)
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3377E/MAX3378E
DATA
I/O VL1
I/O VCC1
I/O VL2
I/O VL3
I/O VL4
I/O VCC2
I/O VCC3
I/O VCC4
DATA
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3379E
DATA
Maxim Integrated
I VL1
O VCC1
I VL2
O VCC2
I VL3
I VL4
O VCC3
O VCC4
DATA
17
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Applications Circuits (continued)
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3390E
I VL1
O VL1
DATA
I VL2
O VCC2
I VL3
I VL4
O VCC3
O VCC4
DATA
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3391E
DATA
O VL1
O VL2
I VL3
I VL4
18
I VCC1
I VCC2
O VCC3
O VCC4
DATA
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Applications Circuits (continued)
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3392E
DATA
O VL1
I VCC1
O VL2
I VCC2
O VL3
I VL4
I VCC3
O VCC4
DATA
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
THREE-STATE
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3393E
DATA
O VL1
O VL2
O VL3
I VL4
Maxim Integrated
I VCC1
I VCC2
I VCC3
I VCC4
DATA
19
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Ordering Information (continued)
PART
TEMP RANGE
PINPACKAGE
PART
TEMP RANGE
PINPACKAGE
MAX3372EEBL+T
-40°C to +85°C
9 UCSP
(1.5mm x 1.5mm)
MAX3378EEBC+T
-40°C to +85°C
12 UCSP
(1.5mm x 2.0mm)
MAX3372EETA+T
-40°C to +85°C
8 TDFN-EP**
(3mm x 3mm)
MAX3378EETD+T
-40°C to +85°C
14 TDFN-EP**
(3mm x 3mm)
MAX3373EEKA+T
-40°C to +85°C
8 SOT23
MAX3379EEUD+
-40°C to +85°C
14 TSSOP
MAX3373EEBL+T
-40°C to +85°C
9 UCSP
(1.5mm x 1.5mm)
MAX3379EEBC+T
-40°C to +85°C
12 UCSP
(1.5mm x 2.0mm)
MAX3373EETA+T
-40°C to +85°C
8 TDFN-EP**
(3mm x 3mm)
MAX3379EETD+T
-40°C to +85°C
14 TDFN-EP**
(3mm x 3mm)
MAX3374EEKA+T
-40°C to +85°C
8 SOT23
MAX3390EEUD+
-40°C to +85°C
14 TSSOP
MAX3374EEBL+T
-40°C to +85°C
9 UCSP
(1.5mm x 1.5mm)
MAX3390EEBC+T
-40°C to +85°C
12 UCSP
(1.5mm x 2.0mm)
MAX3374EETA+T
-40°C to +85°C
8 TDFN-EP**
(3mm x 3mm)
MAX3390EETD+T
-40°C to +85°C
14 TDFN-EP**
(3mm x 3mm)
MAX3375EEKA+T
-40°C to +85°C
8 SOT23
MAX3391EEUD+
-40°C to +85°C
14 TSSOP
MAX3375EEBL+T
-40°C to +85°C
9 UCSP
(1.5mm x 1.5mm)
MAX3391EEBC+T
-40°C to +85°C
12 UCSP
(1.5mm x 2.0mm)
MAX3375EETA+T
-40°C to +85°C
8 TDFN-EP**
(3mm x 3mm)
MAX3391EETD+T
-40°C to +85°C
14 TDFN-EP**
(3mm x 3mm)
MAX3376EEKA+T
-40°C to +85°C
8 SOT23
MAX3392EEUD+
-40°C to +85°C
14 TSSOP
MAX3376EEBL+T
-40°C to +85°C
9 UCSP
(1.5mm x 1.5mm)
MAX3392EEBC+T
-40°C to +85°C
12 UCSP
(1.5mm x 2.0mm)
MAX3376EETA+T
-40°C to +85°C
8 TDFN-EP**
(3mm x 3mm)
MAX3392EETD+T
-40°C to +85°C
14 TDFN-EP**
(3mm x 3mm)
MAX3377EEUD+
-40°C to +85°C
14 TSSOP
MAX3393EEUD+
-40°C to +85°C
14 TSSOP
MAX3377EEBC+T
-40°C to +85°C
9 UCSP
(1.5mm x 1.5mm)
MAX3393EEBC+T
-40°C to +85°C
12 UCSP
(1.5mm x 2.0mm)
MAX3377EETD+T
-40°C to +85°C
14 TDFN-EP**
(3mm x 3mm)
MAX3393EETD+T
-40°C to +85°C
14 TDFN-EP**
(3mm x 3mm)
MAX3378EEUD+
-40°C to +85°C
14 TSSOP
+Denotes a lead-free package.
**EP = Exposed pad.
T = Tape and reel.
20
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Selector Guide
LEVEL
TRANSLATION
Tx/
Rx†
MAX3372EEKA+T
Bi
2/2
MAX3372EEBL+T
Bi
2/2
MAX3372EETA+T
Bi
2/2
MAX3373EEKA+T
Bi
2/2
MAX3373EEBL+T
Bi
MAX3373EETA+T
Bi
PART
DATA
RATE
TOP
MARK
PART
LEVEL
TRANSLATION
Tx/
Rx†
DATA
RATE
TOP
MARK
AAKO
MAX3378EEUD+
Bi
4/4
AAR
MAX3378EEBC+T
Bi
4/4
AAY
AQG
MAX3378EETD+T
Bi
4/4
AAH
AAKS
MAX3379EEUD+
Uni
4/0
—
2/2
AAZ
MAX3379EEBC+T
Uni
4/0
AAZ
2/2
AQH
MAX3379EETD+T
Uni
4/0
AAI
Uni
3/1
—
ABA
230kbps
MAX3374EEKA+T
Uni
2/0
AALH
MAX3390EEUD+
MAX3374EEBL+T
Uni
2/0
ABA
MAX3390EEBC+T
Uni
3/1
MAX3374EETA+T
Uni
2/0
AQI
MAX3390EETD+T
Uni
3/1
AALI
MAX3391EEUD+
Uni
2/2
8Mbps*
—
8Mbps*
AAJ
—
MAX3375EEKA+T
Uni
1/1
MAX3375EEBL+T
Uni
1/1
ABB
MAX3391EEBC+T
Uni
2/2
ABB
MAX3375EETA+T
Uni
1/1
AQJ
MAX3391EETD+T
Uni
2/2
AAK
AALG
MAX3392EEUD+
Uni
1/3
—
MAX3376EEKA+T
Uni
0/2
MAX3376EEBL+T
Uni
0/2
AAV
MAX3392EEBC+T
Uni
1/3
ABC
MAX3376EETA+T
Uni
0/2
AQK
MAX3392EETD+T
Uni
1/3
AAL
MAX3377EEUD+
Bi
4/4
—
MAX3393EEUD+
Uni
0/4
—
MAX3377EEBC+T
Bi
4/4
AAX
MAX3393EEBC+T
Uni
0/4
ABD
MAX3377EETD+T
Bi
4/4
AAG
MAX3393EETD+T
Uni
0/4
AAM
230kbps
Tx = VL → VCC, Rx = VCC → VL
†
*Higher data rates are possible (see the Timing Characteristics table).
Maxim Integrated
21
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Pin Configurations (continued)
A
B
C
+
I/O VCC2
1
VCC
THREE-STATE
VL
MAX3372E
MAX3373E
2
I/O VCC1
N.C.
I/O VL1
+
8 I/O VCC1
1
GND 2
VL
7 VCC
3
6 THREE-STATE
I/O VL2 4
3
I/O VCC2
GND
5 I/O VL1
B
8 I/O VL2
GND 2
I/O VCC1
7 VL
6 I/O VL1
3
VCC 4
*EP
SOT23-8
TOP VIEW
TDFN-8 (3mm x 3mm)
TOP VIEW
*CONNECT EP TO GND
C
+
+
O VCC2
1
VCC
THREE-STATE
VL
O VCC1
N.C.
I VL1
MAX3374E
2
1
8 O VCC1
GND 2
VL
7 VCC
3
6 THREE-STATE
I VL2 4
5 I VL1
O VCC2
1
8 I V L2
GND 2
O VCC1
7 VL
6 I VL1
3
VCC 4
*EP
3
O VCC2
GND
I VL2
B
*CONNECT EP TO GND
C
+
+
O VCC2
1
VCC
THREE-STATE
VL
O VCC1
N.C.
I VL1
MAX3375E
2
1
8 I VCC1
GND 2
VL
7 VCC
3
6 THREE-STATE
I VL2 4
5 O VL1
O VCC2
1
8 I VL2
GND 2
I VCC1
7 VL
6 O VL1
3
VCC 4
*EP
3
I VCC2
GND
O VL2
B
*CONNECT EP TO GND
C
+
+
I VCC2
1
VCC
THREE-STATE
VL
I VCC1
N.C.
O V L1
2
GND
8 I VCC1
GND 2
VL
7 VCC
3
6 THREE-STATE
5 O VL1
I VCC2 1
8 O VL2
GND 2
I VCC1
7 VL
6 O VL1
3
VCC 4
*EP
5 THREE-STATE
O VL2
9 UCSP (1.5mm x 1.5mm)
BOTTOM VIEW
22
MAX3376E
1
O VL2 4
3
I VCC2
5 THREE-STATE
TDFN-8 (3mm x 3mm)
TOP VIEW
SOT23-8
TOP VIEW
9 UCSP (1.5mm x 1.5mm)
BOTTOM VIEW
A
5 THREE-STATE
TDFN-8 (3mm x 3mm)
TOP VIEW
SOT23-8
TOP VIEW
9 UCSP (1.5mm x 1.5mm)
BOTTOM VIEW
A
5 THREE-STATE
I/O VL2
9 UCSP (1.5mm x 1.5mm)
BOTTOM VIEW
A
I/O VCC2 1
SOT23-8
TOP VIEW
TDFN-8 (3mm x 3mm)
TOP VIEW
*CONNECT EP TO GND
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Pin Configurations (continued)
B
A
C
+
+
1
VCC
I/O VL1
I/O VCC1
MAX3377E
MAX3378E
2
VL
I/O VL2
I/O VCC2
3
I/O VL3 THREE-STATE I/O VCC3
4
I/O VL4
GND
VL
1
14
VCC
I/O VL1
1
14
VCC
I/O VL1
2
13
I/0 VCC1
I/O VL2
2
13
I/0 VCC1
I/O VL2
3
12
I/0 VCC2
THREE-STATE
3
12
I/0 VCC2
I/O VL3
4
11
I/0 VCC3
N.C.
4
11
N.C.
I/O VL4
5
10
I/0 VCC4
I/O VL3
5
10
VL
N.C.
6
9
N.C.
I/O VL4
6
9
I/0 VCC3
GND
7
8
THREE-STATE
GND
7
8
I/0 VCC4
B
TDFN-14 (3mm x 3mm)
TOP VIEW
TSSOP-14
TOP VIEW
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
A
*CONNECT EP TO GND
C
+
+
1
VCC
I VL1
O VCC1
MAX3379E
2
VL
I VL2
O VCC2
3
I VL3
THREE-STATE O VCC3
4
I VL4
GND
B
1
14
13 O VCC1
I VL2
2
13
0 VCC1
12 O VCC2
THREE-STATE
3
12
0 VCC2
11 O VCC3
N.C.
4
11
N.C.
5
10
VL
9
0 VCC3
8
0 VCC4
1
14 VCC
I VL1
2
I VL2
3
I VL3
4
I VL4
5
10 O VCC4
I VL3
N.C.
6
9
N.C.
I VL4
6
GND
7
8
THREE-STATE
GND
7
TDFN-14 (3mm x 3mm)
TOP VIEW
TSSOP-14
TOP VIEW
*CONNECT EP TO GND
C
1
VCC
I VCC1
MAX3390E
2
VL
I VL2
O VCC2
3
I VL3
THREE-STATE O VCC3
4
I VL4
GND
+
VL
1
14 VCC
O VL1
2
13 I VCC1
I VL2
3
12 O VCC2
VCC
O VL1
1
14
I V L2
2
13
I VCC1
THREE-STATE
3
12
0 VCC2
I VL3
4
11 O VCC3
N.C.
4
11
N.C.
I VL4
5
10 O VCC4
I VL3
5
10
VL
N.C.
6
9
N.C.
I V L4
6
9
0 VCC3
GND
7
8
THREE-STATE
GND
7
8
0 VCC4
O VCC4
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
Maxim Integrated
*EP
O VCC4
+
O VL1
VCC
I VL1
VL
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
A
*EP
I/O VCC4
TSSOP-14
TOP VIEW
*EP
TDFN-14 (3mm x 3mm)
TOP VIEW
*CONNECT EP TO GND
23
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Pin Configurations (continued)
A
B
C
+
+
14
VCC
O VL1
2
13 I VCC1
O VL2
2
13
I VCC1
O VL2
3
12 I VCC2
THREE-STATE
3
12
I VCC2
VL 1
1
O VL1
VCC
I VCC1
MAX3391E
2
O VL2
VL
I VCC2
3
I VL3
THREE-STATE O VCC3
I VL4
GND
B
1
I VL3 4
11 O VCC3
N.C.
4
11
N.C.
10 O VCC4
I VL3
5
10
VL
N.C. 6
9
I VL4
6
9
0 VCC3
8
0 VCC4
8
N.C.
THREE-STATE
GND
7
TDFN-14 (3mm x 3mm)
TOP VIEW
TSSOP-14
TOP VIEW
*CONNECT EP TO GND
C
+
+
14 VCC
VL 1
1
O VL1
VCC
I VCC1
MAX3392E
2
O VL2
VL
I VCC2
3
O VL3
THREE-STATE I VCC3
4
I VL4
GND
*EP
O VCC4
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
A
O VL1
I VL4 5
GND 7
4
14 VCC
O VL1
1
14
VCC
O VL1
2
13 I VCC1
O V L2
2
13
I VCC1
O VL2
3
12 I VCC2
THREE-STATE
3
12
I VCC2
O VL3 4
11 I VCC3
N.C.
4
11
N.C.
I V L4 5
10 O VCC4
O VL3
5
10
VL
N.C. 6
9
N.C.
I VL4
6
9
I VCC3
GND 7
8
THREE-STATE
GND
7
8
0 VCC4
*EP
O VCC4
TDFN-14 (3mm x 3mm)
TOP VIEW
TSSOP-14
TOP VIEW
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
*CONNECT EP TO GND
A
B
C
+
+
1
O VL1
VCC
I VCC1
MAX3393E
2
O VL2
VL
I VCC2
3
O VL3 THREE-STATE I VCC3
4
O VL4
GND
O VL1
1
14
VCC
O VL1
2
13 I VCC1
O VL2
2
13
I VCC1
O VL2
3
12 I VCC2
THREE-STATE
3
12
I VCC2
O VL3 4
11 I VCC3
N.C.
4
11
N.C.
O V L4 5
10 I VCC4
O VL3
5
10
VL
N.C. 6
9
N.C.
O VL4
6
9
I VCC3
GND 7
8
THREE-STATE
GND
7
8
I VCC4
I VCC4
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
24
14 VCC
VL 1
TSSOP-14
TOP VIEW
TDFN-14 (3mm x 3mm)
TOP VIEW
*CONNECT EP TO GND
Maxim Integrated
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Package Information
Chip Information
PROCESS: BiCMOS
Maxim Integrated
For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a
“+”, “#”, or “-” in the package code indicates RoHS status only.
Package drawings may show a different suffix character, but the
drawing pertains to the package regardless of RoHS status.
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE NO.
LAND
PATTERN NO.
8 SOT23
K8SN+1
21-0078
90-0176
9 UCSP
B9+2
21-0093
12 UCSP
B12+1
21-0104
Refer to
Application
Note 1891
Refer to
Application
Note 1891
8 TDFN
T833+2
21-0137
90-0059
14 TDFN
T1433+2
21-0137
90-0063
14 TSSOP
U14+1
21-0066
90-0113
25
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Revision History
REVISION
NUMBER
REVISION
DATE
0
1/02
Initial Release
1
12/06
Addition of 12-bump ECSP packaging
2
11/07
Addition of lead-free options
3
1/13
Updated packaging information; updated Absolute Maximum Ratings
DESCRIPTION
PAGES
CHANGED
—
–
1, 20–31
1, 2, 9, 20–23
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent
licenses are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and
max limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
26 ________________________________Maxim Integrated 160 Rio Robles, San Jose, CA 95134 USA 1-408-601-1000
© 2013 Maxim Integrated Products, Inc.
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.