NEC NNCD62MF Low capacitance high esd type electrostatic discharge noise clipping diodes 3-pin mini mold Datasheet

DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD6.2MF
LOW CAPACITANCE HIGH ESD TYPE
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(DUAL TYPE: COMMON ANODE)
3-PIN MINI MOLD
This product is a low capacitance type diode developed for
E.S.D.
(Electrostatic
Discharge)
protection.
Based
on
PACKAGE DIMENSIONS
the
(in millimeters)
IEC61000-4-2 test on electromagnetic interference (EMI), the diode
2.8±0.2
0.4+0.1
−0.05
assures an endurance of no less than 30 kV, and capacitance is
small with 20 pF TYP. This product series is the most suitable for
the ESD protection in the high-speed data communication bus such
0.65 +0.1
−0.15
1.5
1
3
FEATURES
• Based on the electrostatic discharge immunity test (IEC61000-4-
Marking
0.16+0.1
−0.06
1.1 to 1.4
is excellent in the frequency characteristic.
0.3
2), the product assures the minimum endurance of 30 kV.
• Capacitance is small with 20 pF TYP. (at VR = 0 V, f = 1 MHz). It
0 to 0.1
APPLICATIONS
• External interface circuit E.S.D. protection in the high-speed data
communication bus such as USB.
PIN CONNECTION
MAXIMUM RATINGS (TA = 25°°C)
Power Dissipation
0.4+0.1
−0.05
0.95
having allowable power dissipation of 200 mW.
2
0.95
NNCD6.2MF include two elements in 3-PIN Mini Mold Package
2.9±0.2
as USB.
P
200 mW (Total)
Surge Reverse Power
PRSM
2 W (t = 10 µs 1 pulse) Fig.5
Junction Temperature
Tj
150°C
Storage Temperature
Tstg
−55°C to +150°C
1. K1 : Cathode 1
SC-59 (EIAJ)
2. K2 : Cathode 2
3. A : Anode (common)
K2
3
2
A
1
K1
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14147EJ2V0DS00 (2nd edition)
Date Published February 2000 N CP(K)
Printed in Japan
©
1999
NNCD6.2MF
ELECTRICAL CHARACTERISTICS (TA = 25°°C) (A-K1, A-K2)
Note 1
Breakdown Voltage
VBR (V)
Type No.
MIN.
NNCD6.2MF
5.7
Dynamic
Note 2
Impedance
ZZ (Ω)
Reverse
Leakage
IR (µA)
MAX. IT (mA) MAX. IT (mA) MAX.
6.7
5
50
5
Capacitance
Ct (pF)
VR (V)
TYP.
3.0
20
2
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
TEST
CONDITION
30
C = 150 pF
R = 330 Ω
(IEC61000-4-2)
Note 1. Tested with pulse (40 ms)
2. ZZ is measured at IT give a small A.C. signal.
TYPICAL CHARACTERISTICS (TA = 25°°C)
Fig. 1 POWER DISSIPATION vs.
Fig. 2 IT vs. VBR CHARACTERISTICS
AMBIENT TEMPERATURE
200
100 m
30 × 30 × 1.6
P.C.B. (Glass Epoxy)
NNCD6.2MF
150
If – On State Current – A
P – Power Dissiipation – mW
250
100
50
0
0
25
50
75
100
125
TA – Ambient Temperature – °C
10 m
1m
100 µ
150
10 µ
5
6
7
VBR – Breakdown Voltage – V
2
Data Sheet D14147EJ2V0DS00
8
NNCD6.2MF
Fig. 3 Ct-VR CHARACTERISTICS
Ct – Capacitance between the terminal – pF
40
f = 1MHz
30
20
NNCD6.2MF
10
0.1
1.0
10
VR – Reverse Voltage – V
Zth – Transient Themal Impedance – °C/W
Fig. 4 TRANSIENT THERMAL IMPEADANCE CHARACTERISTIC
5000
1000
625°C/W
NNCD6.2MF
100
10
5
1m
P.C.B. (Giass Epoxy)
(30 mm × 30 mm × 1.6 mm)
10 m
100 m
1
10
100
t – Time – s
Fig. 5 SURGE REVERSE POWER RATINGS
TA = 25 °C
Non Repetitive
PRSM
PRSM – Surge Reverse Power – W
50
10
tT
NNCD6.2MF
1
0.5
1µ
10 µ
100 µ
1m
10 m
100 m
t – Pulse Width – s
Data Sheet D14147EJ2V0DS00
3
NNCD6.2MF
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M7 98. 8
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