MSP0515D -55V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-55V,ID =-15A RDS(ON) <80mΩ @ VGS=-10V ● High density cell design for ultra low Rdson Lead Free ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC Converter Marking and pin assignment PIN Configuration TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP0515D MSP0515D TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS -55 V Gate-Source Voltage VGS ±20 V ID -15 A ID (100℃) -10 A Pulsed Drain Current IDM -50 A Maximum Power Dissipation PD 50 W TJ,TSTG -55 To 150 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Operating Junction and Storage Temperature Range MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSP0515D Thermal Characteristic (Note 2) Thermal Resistance ,Junction-to-Case RθJC ℃/W 2.5 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -55 - - V Zero Gate Voltage Drain Current IDSS VDS=-55V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.5 -2.3 -3.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-5A - 64 80 mΩ gFS VDS=-15V,ID=-5A 16 - - S - 1450 - PF - 145 - PF Crss - 110 - PF Turn-on Delay Time td(on) - 8 - nS Turn-on Rise Time tr VDD=-30V, ,RL=30Ω - 9 - nS td(off) VGS=-10V,RGEN=6Ω - 65 - nS - 30 - nS - 26 - nC - 4.5 - nC - 7 - nC - - 1.2 V - - -15 A Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=-20V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-30V,ID=-5A, VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS=-3A IS Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP0515D Test Circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSP0515D -ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) -Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature -ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance Normalized -Vgs Gate-Source Voltage (V) -ID- Drain Current (A) Figure 3 Rdson- Drain Current MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward http://www.moresemi.com 4/6 C Capacitance (pF) Normalized BVdss MSP0515D TJ-Junction Temperature (℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSP0515D TO-252-2L Package Information MORE Semiconductor Company Limited http://www.moresemi.com 6/6