MMBT2222ALP4 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0009 grams (Approximate) X2-DFN1006-3 C B B C E E Bottom View Device Symbol Top View Device Schematic Ordering Information (Note 4) Product MMBT2222ALP4-7B Notes: Marking 2S Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 2S 2S = Product Type Marking Code Bar Denotes Base and Emitter Side Top View MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 1 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT2222ALP4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current Symbol VCBO VCEO VEBO IC ICM Value 75 40 6 600 800 Unit V V V mA mA Value 460 1 272 120 110 -55 to +150 Unit mW W °C/W °C/W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Lead (Note 7) Operating and Storage Temperature Range Symbol PD PD RθJA RθJA RθJL TJ, TSTG ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value ≥ 8,000 ≥ 400 Unit V V JEDEC Class 3B C 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 2 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT2222ALP4 Thermal Characteristics r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 272°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.0001 0.01 1 t1, PULSE DURATION TIME (sec) Figure 1 Transient Thermal Resistance 10,000 0.5 Single Pulse R θJA = 272°C/W R θJA(t) = r(t) * R θJA T J - T A = P * R θJA(t) 100 PD, POWER DISSIPATION (W) P(PK), PEAK TRANSIENT POIWER (W) 1,000 100 10 1 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (sec) Figure 2 Single Pulse Maximum Power Dissipation Document number: DS35506 Rev. 3 - 2 0.3 0.2 3 of 7 www.diodes.com RθJA = 272°C/W 0.1 0 0.1 1E-06 MMBT2222ALP4 0.4 0 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Figure 3 Power Dissipation vs. Ambient Temperature August 2012 © Diodes Incorporated MMBT2222ALP4 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cutoff Current Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICEX 75 40 6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 10 10 10 20 V V V nA nA μA nA nA IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 100μA, IC = 0 VCE = 60V, VEB(off) = 3V VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = +125°C VEB = 5V, IC = 0 VCE = 60V, VEB(off) = 3V 35 50 75 35 100 50 40 ⎯ ⎯ 0.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 300 ⎯ ⎯ 0.3 1.0 1.2 2.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 10mA, TA = -55°C VCE = 10V, IC = 150mA VCE = 1V, IC = 150mA VCE = 10V, IC = 500mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA pF pF MHz Collector Cutoff Current ICBO Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6) IEBO IBL DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) SMALL SIGNAL CHARACTERISTICS (Note 6) Output Capacitance Input Capacitance Current Gain-Bandwidth Product V V Cobo Cibo fT ⎯ ⎯ 300 ⎯ 8 25 ⎯ Noise Figure NF ⎯ ⎯ 4.0 dB Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance SWICHING CHARACTERISTICS (Note 6) Delay Time Rise Time Storage Time Fall Time hie hre hfe hoe 0.25 ⎯ 75 25 ⎯ ⎯ ⎯ ⎯ 1.25 4.0 375 200 kΩ X 10−4 ⎯ µS td tr ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 25 225 60 Notes: nS Test Condition VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100µA, RS = 1.0kΩ, f = 1.0kHz IC = 10mA, VCE = 10V, f = 1.0kHz VCC = 30V, VBE(off) = -0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2=15mA 6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%. MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 4 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT2222ALP4 1,000 0.5 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN IC IB = 10 TA = 125°C 100 TA = -25°C TA = +25°C 10 0.4 TA = 25°C 0.3 T A = 150°C 0.2 0.1 TA = -50°C VCE = 1.0V 0 1,000 10 100 IC, COLLECTOR CURRENT (mA) Figure 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Figure 4 Typical DC Current Gain vs. Collector Current 1.0 VCE = 5V 0.9 f = 1MHz TA = -50°C 0.8 0.7 CAPACITANCE (pF) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 0.1 T A = 25°C 0.6 0.5 TA = 150°C Cibo 0.4 Cobo 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current VR, REVERSE VOLTAGE (V) Figure 7 Typical Capacitance Characteristics 2.0 VCE = 5V VCE, COLLECTOR-EMITTER VOLTAGE (V) fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 8 Typical Gain-Bandwidth Product vs. Collector Current MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 5 of 7 www.diodes.com 1.8 1.6 IC = 30mA IC = 1mA IC = 10mA IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 100 1 10 IB, BASE CURRENT (mA) Figure 9 Typical Collector Saturation Region 0.01 August 2012 © Diodes Incorporated MMBT2222ALP4 Package Outline Dimensions A A1 D b1 E e b2 L2 L3 X2-DFN1006-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 6 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT2222ALP4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 7 of 7 www.diodes.com August 2012 © Diodes Incorporated