Thinki MUR1220FCTS 12.0 ampere insulated dual common cathode ultra fast recovery rectifier Datasheet

MUR1220FCT thru MUR1260FCT
Pb
MUR1220FCT/MUR1240FCT/MUR1260FCT
Pb Free Plating Product
12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
ITO-220AB(TO-220F-3L)
Unit:inch(mm)
.189(4.8)
.165(4.2)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.161(4.1)MAX
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
Mechanical Data
※ Case: Full Plastic Isolated Package ITO-220AB
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
※ Weight: 2.0 gram approximately
.1
.1
(2.55)
(2.55)
Case
Positive
Common Cathode
Suffix "CT"
.543(13.8)
.512(13.0)
.606(15.4)
.583(14.8)
.112(2.85)
.100(2.55)
Features
※ Fast switching for high efficiency
※ Low forward voltage drop
※ High current capability
※ Low reverse leakage current
※ High surge current capability
.032(.8)
MAX
Case
Case
Negative
Common Anode
Suffix "CTR"
.114(2.9)
.098(2.5)
Doubler
Tandem Polarity
Suffix "CTD"
Case
Series
Tandem Polarity
Suffix "CTS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
MUR1220FCT
MUR1220FCTR
MUR1220FCTD
MUR1220FCTS
MUR1240FCT
MUR1240FCTR
MUR1240FCTD
MUR1240FCTS
MUR1260FCT
MUR1260FCTR
MUR1260FCTD
MUR1260FCTS
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
V
V
V
Maximum Average Forward Rectified
Current Tc=100°C
(Total Device 2x6.0A=12.0A)
IF(AV)
12.0
A
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)
IFSM
100
A
Maximum Instantaneous Forward Voltage
@6.0A
(Per Diode/Per Leg)
VF
Maximum DC Reverse Current @TJ=25°C
At Rated DC Blocking Voltage @TJ=125°C
IR
5.0
100
μA
μA
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
CJ
RθJC
35
65
3.0
nS
pF
°C/W
Operating Junction and Storage
Temperature Range
TJ,TSTG
-55 to +150
°C
0.98
1.3
1.7
V
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
MUR1220FCT thru MUR1260FCT
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
12
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
100
60 Hz Resistive or
Inductive load
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
80
60
40
20
0
0
50
100
150
1
CASE TEMPERATURE, C
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
60
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
NUMBER OF CYCLES AT 60Hz
o
MUR1220FCT
MUR1240FCT
6
MUR1260FCT
1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com.tw/
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