GOOD-ARK GDSSF2307 High power and current handing capability Datasheet

GDSSF2307
D
DESCRIPTION
The SSF2307 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
G
S
GENERAL FEATURES
Schematic diagram
● VDS = -30V,ID = -3A
RDS(ON) < 140mΩ @ VGS=-4.5V
RDS(ON) < 80mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2307
SSF2307
SOT-23
Tape width
Quantity
8 mm
3000 units
Ø180mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
ID(25℃)
-3
A
ID(70℃)
-2.5
A
IDM
-12
A
PD
1.25
W
TJ,TSTG
-55 To 150
℃
RθJA
100
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2307
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
-1
V
VGS=-10V, ID=-3A
64
80
VGS=-4.5V, ID=-2.5A
100
140
VDS=-10V,ID=-3A
3
mΩ
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-15V,VGS=0V,
F=1.0MHz
600
PF
150
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
95
PF
Turn-on Delay Time
td(on)
10
nS
Turn-on Rise Time
tr
9
nS
25
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDD=-15V,ID=-1A
VGS=-10V,RGEN=6Ω
Turn-Off Fall Time
tf
8
nS
Total Gate Charge
Qg
10
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
Qgd
2
nC
VDS=-15V,ID=-3A,VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1.25A
-1.2
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
V
GDSSF2307
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
ZthJA Normalized Transient
Thermal Resistance
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2307
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
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