ON NCV4949CPDR2G Low dropout voltage regulator Datasheet

NCV4949C
100 mA, 5.0 V, Low Dropout
Voltage Regulator with
Reset and Sense
The NCV4949C is a monolithic integrated 5.0 V voltage regulator
with a very low dropout and additional functions such as reset and an
uncommitted voltage sense comparator.
It is designed for supplying microcontroller/microprocessor
controlled systems particularly in automotive applications. The
NCV4949C has improved reset behavior for lower input and output
voltage levels.
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MARKING
DIAGRAMS
8
Features
•
•
•
•
•
•
•
•
•
•
SOIC−8
D SUFFIX
CASE 751−07
8
Operating DC Supply Voltage Range 5.5 V to 40 V
High Precision Output Voltage 5.0 V ±1%
Output Current Capability Up to 100 mA
Very Low Dropout Voltage Less Than 0.4 V
Reset Circuit Sensing The Output Voltage
Programmable Reset Pulse Delay
Voltage Sense Comparator
Fault Protection, +60 V Peak Transient Voltage, −40 V Reverse
Voltage, Short Circuit, Thermal Overload
NCV Prefix for Automotive and Other Applications Requiring Site
and Change Control
These are Pb−Free Devices
Output
Voltage (Vout) 8
NC
3
1
V4949C
ALYW
G
1
8
SOIC−8 EP
PD SUFFIX
CASE 751AC
8
1
V4949C
ALYWG
G
1
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W = Work Week
G
= Pb−Free Device
(Note: Microdot may be in either location)
CT 4
PIN CONNECTIONS
Supply
Voltage (VCC)
1
2.0 mA
VCC
1
8
Vout
Si
2
7
So
NC
3
6
Reset
CT
4
5
GND
Reset
6
Regulator
Sense
Output
(So)
Reset
Sense
Input (Si)
7
2
Vref
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
1.25 V
2.0 V
Sense
5
GND
Figure 1. Representative Block Diagram
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 1
1
Publication Order Number:
NCV4949C/D
NCV4949C
PIN FUNCTION DESCRIPTION
SO−8 Pin#
SO−8 EP
Symbol
Description
1
1
VCC
2
2
Si
Input of Sense Comparator
4
4
CT
Reset Delay Capacitor
5
5
GND
Ground
6
6
Reset
Output of Reset Comparator
7
7
SO
Output of Sense Comparator
8
8
Vout
Main Regulator Output
3
3
NC
No Connect
−
EPAD
EPAD
Supply Voltage
Connect to Ground potential or leave unconnected
MAXIMUM RATINGS
Rating
Symbol
Min
Max
Unit
DC Operating Supply Voltage
VCC
5.5
40
V
Input to Regulator
VCC
−40
45
V
VCC TR
−
60
V
Output
Vout
Iout
−0.5
−10
20
Internally Limited
V
mA
Sense Input
VSI
ISI
−40
−1.0
45
1.0
V
mA
Sense Output
VSO
ISO
−0.3
−5.0
7.0
5.0
V
mA
Reset Output
VReset
IReset
−0.3
−5.0
7.0
5.0
V
mA
Reset Delay
VCT
ICT
−0.3
Internally Limited
7.0
Internally Limited
V
mA
−
−
−
4000
400
V
TJ
−40
+150
°C
TSTG
−50
+150
°C
Transient Supply Voltage (Note 1)
ESD Protection at any pin
Human Body Model
Machine Model
Operating Junction Temperature Range
Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Load Dump Test B (with centralized load dump suppression) according to ISO16750-2 standard. Guaranteed by design. Not tested in
production. Passed Class C according to ISO16750-1.
THERMAL CHARACTERISTICS
Characteristic
Test Conditions (Typical Values)
Note 2
Note 3
Note 4
Unit
SOIC−8
Junction−to−Lead (YJLx6 qJL6)
Junction−to−Ambient (RqJA, qJA)
65.6
169.4
62
147.6
61
127.2
°C/W
SOIC−8 EP
Junction−to−Lead (YJL6, qJL6)
Junction−to−Ambient (RqJA, qJA)
36.1
109.2
32.1
91.1
27.4
71.9
°C/W
Symbol
Min
Max
Unit
Reflow (SMD styles only) lead free 60 − 150 sec above 217, 40 sec max at peak
Tsld
−
260
°C
Moisture Sensitivity Level (SOIC−8)
MSL
Level 1
Moisture Sensitivity Level (SOIC−8EP)
MSL
Level 2
2. 1 oz. Copper, 100 mm sq. Copper area, 1.5 mm thick FR−4.
3. 1 oz. Copper, 200 mm sq. Copper area, 1.5 mm thick FR−4.
4. 1 oz. Copper, 500 mm sq. Copper area, 1.5 mm thick FR−4.
LEAD TEMPERATURE SOLDERING REFLOW (Note 5)
Rating
5. Per IPC / JEDEC J−STD−020C.
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2
NCV4949C
ELECTRICAL CHARACTERISTICS (VCC = 14 V, −40°C < TJ < 150°C, unless otherwise specified.)
Symbol
Min
Typ
Max
Unit
Output Voltage (TJ = 25°C, Iout = 1.0 mA)
Vout
4.95
5.0
5.05
V
Output Voltage (6.0 V < VCC < 28 V, 1.0 mA < Iout < 50 mA)
Vout
4.9
5.0
5.1
V
Output Voltage (VCC = 35 V, t < 1.0 s, 1.0 mA < Iout < 50 mA)
Vout
4.9
5.0
5.1
V
Dropout Voltage
Vdrop
Iout = 10 mA
−
0.08
0.25
Iout = 50 mA
−
0.18
0.40
Iout = 100 mA
−
0.22
0.50
VIO
−
0.12
0.4
V
Line Regulation (6.0 V < VCC < 28 V, Iout = 1.0 mA)
Regline
−
1.0
20
mV
Load Regulation (1.0 mA < Iout < 100 mA)
Regload
−
1.0
30
mV
Characteristic
Input to Output Voltage Difference in Undervoltage Condition
V
(VCC = 4.0 V, Iout = 35 mA)
Current Limit
ILim
Vout = 4.5 V
105
320
400
−
220
−
IQSE
−
120
260
mA
IQ
−
−
5.0
mA
VResth
−
4.5
−
V
Vout = 0 V
Quiescent Current (Iout = 0.3 mA, TJ < 100°C)
Quiescent Current (Iout = 100 mA)
mA
RESET
Reset Threshold Voltage
Reset Threshold Hysteresis
VResth,hys
mV
@ TJ = 25°C
50
100
200
@ TJ = −40 to +125°C
50
−
300
Reset Pulse Delay (CT = 100 nF, tR ≥ 100 ms)
tResD
55
100
180
ms
Reset Reaction Time (CT = 100 nF)
tResR
−
5.0
30
ms
Reset Output Low Voltage (RReset = 10 kW to Vout, VCC ≥ 3.0 V)
VResL
−
−
0.3
V
Reset Output High Leakage Current (VReset = 5.0 V)
IResH
−
−
1.0
mA
Delay Comparator Threshold
VCTth
−
2.0
−
V
VCTth, hys
−
100
−
mV
VSOth
1.16
1.25
1.35
V
VSOth,hys
20
100
200
mV
Sense Output Low Voltage (VSI ≤ 1.16 V, VCC ≥ 3.0 V, RSO = 10 kW to Vout)
VSOL
−
−
0.4
V
Sense Output Leakage (VSO = 5.0 V, VSI ≥ 1.5 V)
ISOH
−
−
1.0
mA
ISI
−1.0
0.1
1.0
mA
TSD
150
−
200
°C
Delay Comparator Threshold Hysteresis
SENSE
Sense Low Threshold (VSI Decreasing = 1.5 V to 1.0 V)
Sense Threshold Hysteresis
Sense Input Current
THERMAL SHUTDOWN
Thermal Shutdown Temperature (Iout = 1 mA) (Note 6)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Values based on design and/or characterization.
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3
NCV4949C
TYPICAL CHARACTERISTICS
5.04
100
ESR (W)
10
1
VOUT, OUTPUT VOLTAGE (V)
Unstable Region
VIN = 14 V
COUT = 2.2 − 100 mF
Stable Region
0.1
0.01
0
25
50
75
5.01
5.00
4.99
4.98
4.97
0
40
80
120
IOUT, OUTPUT CURRENT (mA)
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. ESR Stability Border vs. Output
Current
Figure 3. Output Voltage vs. Junction
Temperature
160
400
VDROP, DROPOUT VOLTAGE (mV)
TJ = 25°C
VOUT, OUTPUT VOLTAGE (V)
5.02
4.96
−40
100
6
5
4
RL = 5 kW
3
2
RL = 100 W
1
0
350
300
TJ = 125°C
250
TJ = 25°C
200
150
100
50
0
1
2
3
4
5
6
7
8
9
10
0
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Output Voltage vs. Supply Voltage
Figure 5. Dropout Voltage vs. Output Current
2.5
250
IQ, QUIESCENT CURRENT (mA)
IOUT = 100 mA
300
IOUT = 50 mA
200
150
IOUT = 10 mA
100
50
0
−40
20
VCC, SUPPLY VOLTAGE (V)
350
VDROP, DROPOUT VOLTAGE (mV)
VCC = 14 V
IOUT = 1.0 mA
5.03
VCC = 14 V
TJ = 25°C
2.0
1.5
1.0
0.5
0
0
40
80
0.1
120
1
10
TJ, JUNCTION TEMPERATURE (°C)
IOUT, OUTPUT CURRENT (mA)
Figure 6. Dropout Voltage vs. Junction
Temperature
Figure 7. Quiescent Current vs. Output
Current
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4
100
NCV4949C
TYPICAL CHARACTERISTICS
VCTth, RESET DELAY THRESHOLD (V)
TJ = 25°C
7
6
5
4
3
2
RL = 100 W
1
RL = 5 kW
0
0
5
10
15
20
25
30
35
40
VRESET, RESET OUTPUT (V)
1.90
1.88
1.86
1.84
1.82
VCC = 14 V
1.80
−40
0
40
80
120
160
Figure 9. Reset Delay Threshold vs. Junction
Temperature
4
Resistor 10 kW
from Reset Output
to 5.0 V
2
1
0
4.0 4.1 4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
4.80
VCC = 14 V
4.75
4.70
Upper Threshold
4.65
4.60
Lower Threshold
4.55
4.50
4.45
4.40
−40
0
40
80
120
VOUT, OUTPUT VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Reset Output vs. Regulator Output
Voltage
Figure 11. Reset Thresholds vs. Junction
Temperature
160
1.40
VSI, SENSE INPUT VOLTAGE (V)
6
VSO, SENSE OUTPUT VOLTAGE (V)
1.92
Figure 8. Quiescent Current vs. Supply
Voltage
VCC = 14 V
TJ = 25°C
3
1.94
TJ, JUNCTION TEMPERATURE (°C)
6
5
1.96
VCC, SUPPLY VOLTAGE (V)
VRESET, RESET THRESHOLD VOLTAGE (V)
IQ, QUIESCENT CURRENT (mA)
8
VCC = 14 V
TJ = 25°C
5
4
Resistor 10 kW
from Reset Output
to 5.0 V
3
2
1
0
1.0
1.1
1.2
1.3
1.4
Upper Threshold
1.35
1.30
Lower Threshold
1.25
1.20
VCC = 14 V
1.15
−40
1.5
0
40
80
120
VSI, SENSE INPUT VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Sense Output vs. Sense Input
Voltage
Figure 13. Sense Thresholds vs. Junction
Temperature
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5
160
NCV4949C
APPLICATION INFORMATION
CO
Vout
8
Vbat
CCT
NC
3
CT
4
VCC
1
Cs
2.0 mA
Reset
6
RReset
10 kW
RSI1
Vout
Regulator
Reset
RSO
10 kW
So
Si
7
2
RSI2
CSI
Vref
1.25 V
2.0 V
Sense
5 GND
NOTE:
1. For good dynamic performance: Cs ≥ 1.0 mF, CO ≥ 4.7 mF, ESR < 4.5 W at 10 kHz
Figure 14. Application Schematic
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NCV4949C
OPERATING DESCRIPTION
The NCV4949C is a monolithic integrated low dropout
voltage regulator. Several outstanding features and auxiliary
functions are implemented to meet the requirements of
supplying microprocessor systems in automotive
applications. It is also suitable in other applications where
the included functions are required. The modular approach
of this device allows the use of other features and functions
independently when required.
Vout
Vout
5.0 V
Voltage Regulator
The voltage regulator uses a lateral PNP transistor as a
regulating element. With this structure, very low dropout
voltage at currents up to 100 mA is obtained. The dropout
operation of the standby regulator is maintained typically
down to 2.5 V input supply voltage.
A typical curve showing the standby output voltage as a
function of the input supply voltage is shown in Figure 16.
The current consumption of the device (quiescent current)
is less than 200 mA.
To reduce the quiescent current peak in the undervoltage
region and to improve the transient response in this region,
the dropout voltage is controlled. The quiescent current as
a function of the supply input voltage is shown in Figure 17.
0V
5.0 V
35 V
VCC
Figure 16. Output Voltage vs. Supply Voltage
IQ, QUIESCENT CURRENT (mA)
8
Short Circuit Protection:
The maximum output current is internally limited. In case
of short circuit, the output current is foldback current limited
as described in Figure 15.
6
7
TJ = 25°C
6
5
4
3
2
RL = 100 W
1
RL = 5 kW
0
0
VOUT, OUTPUT VOLTAGE (V)
2.0 V
5
5
10
15
20
25
30
35
VCC, SUPPLY VOLTAGE (V)
Figure 17. Quiescent Current vs. Supply Voltage
4
3
2
VCC = 14 V
TJ = 25°C
1
0
0
50
100
150
200
250
300
350
400
IOUT, OUTPUT CURRENT (mA)
Figure 15. Foldback Characteristic of Vout
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7
40
NCV4949C
Reset Circuit
Output voltage drops below the reset threshold only
marginally longer than the reaction time results in a shorter
reset delay time.
The nominal reset delay time will be generated for output
voltage drops longer than approximately 50 ms. The typical
reset output waveforms are shown in Figure 19.
The block circuit diagram of the reset circuit is shown in
Figure 18.
The reset circuit supervises the output voltage. The reset
threshold of 4.5 V is defined by the internal reference
voltage and standby output divider.
The reset pulse delay time tRD, is defined by the charge
time of an external capacitor CT:
t
RD
+
Vout
C x 2.0 V
T
2.0 mA
Vout1
5.0 V
VRT + 0.1 V
VRT
The reaction time of the reset circuit originates from the
discharge time limitation of the reset capacitor CT and is
proportional to the value of CT. The reaction time of the reset
circuit increases the noise immunity.
3.0 V
t
tR
Reset
tRD
1.25 V Vref
22 k
40 V
Vin
tRD
tRR
2.0 mA
Switch On
Reset
Input Drop
Dump
Output
Overload
Switch Off
Figure 19. Typical Reset Output Waveforms
CT
Out
+
-
Sense Comparator
The sense comparator compares an input signal with an
internal voltage reference of typical 1.25 V. The use of an
external voltage divider makes this comparator very flexible
in the application.
It can be used to supervise the input voltage either before
or after a protection diode and to provide additional
information to the microprocessor such as low voltage
warnings.
2.0 V
Reg
Figure 18. Reset Circuit
ORDERING INFORMATION
Device
NCV4949CDR2G
NCV4949CPDR2G
Package
Shipping†
SOIC−8
(Pb−Free)
2500 / Tape & Reel
SOIC−8 EP
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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8
NCV4949C
PACKAGE DIMENSIONS
SOIC−8 EP
CASE 751AC
ISSUE B
2X
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. DIMENSIONS IN MILLIMETERS (ANGLES
IN DEGREES).
3. DIMENSION b DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE
0.08 MM TOTAL IN EXCESS OF THE “b”
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
4. DATUMS A AND B TO BE DETERMINED
AT DATUM PLANE H.
0.10 C A-B
D
8
E1
2X
0.10 C D
1
F
EXPOSED
PAD
5
ÉÉ
ÉÉ
PIN ONE
LOCATION
DETAIL A
D
A
5
8
G
E
h
2X
4
4
0.20 C
e
8X b
0.25 C A-B D
B
1
BOTTOM VIEW
A
END VIEW
TOP VIEW
A
0.10 C
A2
0.10 C
b1
GAUGE
PLANE
L
SEATING
PLANE
C
SIDE VIEW
ÉÉ
ÉÉ
ÇÇ
ÉÉ
ÇÇ
ÉÉ
ÇÇ
c
H
8X
A
A1
0.25
(L1)
DETAIL A
q
c1
(b)
SECTION A−A
SOLDERING FOOTPRINT*
2.72
0.107
1.52
0.060
7.0
0.275
Exposed
Pad
4.0
0.155
2.03
0.08
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
DIM
A
A1
A2
b
b1
c
c1
D
E
E1
e
L
L1
F
G
h
q
MILLIMETERS
MIN
MAX
1.35
1.75
0.00
0.10
1.35
1.65
0.31
0.51
0.28
0.48
0.17
0.25
0.17
0.23
4.90 BSC
6.00 BSC
3.90 BSC
1.27 BSC
0.40
1.27
1.04 REF
2.24
3.20
1.55
2.51
0.25
0.50
0_
8_
NCV4949C
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
S
B
0.25 (0.010)
Y
M
M
1
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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