POSEICO ATF1047S14X Fast switching thyristor Datasheet

POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
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POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF1047
FINAL SPECIFICATION
Repetitive voltage up to
Mean on-state current
Surge current
Turn-off time
1400
1305
16
30
V
A
kA
µs
mag 06 - ISSUE : 06
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
1400
V
V
RSM
Non-repetitive peak reverse voltage
125
1500
V
V
DRM
Repetitive peak off-state voltage
125
1400
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
100
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
100
mA
A
CONDUCTING
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
1305
I
T (AV)
Mean on-state current
180° sin, 1 kHz,T h=55°C, double side cooled
1230
A
I
TSM
Surge on-state current, non repetitive
sine wave, 10 ms
16
kA
I² t
I² t
without reverse voltage
V
T
On-state voltage
On-state current =
V
T(TO)
T
r
125
1280 x1E3
2000 A
A²s
25
2
V
Threshold voltage
125
1,32
V
On-state slope resistance
125
0,230
mohm
From 75% VDRM up to 2000 A, gate 20V 10 ohm
125
500
A/µs
SWITCHING
di/dt
Critical rate of rise of on-state current, min
dv/dt
Critical rate of rise of off-state voltage, min
Linear ramp up to 70% of VDRM
125
600
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 20V, 10 ohm , tr=1 µs
25
0,6
µs
tq
Circuit commutated turn-off time
125
30
µs
125
650
µC
di/dt =
dV/dt =
Q rr
Reverse recovery charge
A/µs, I= 1000
I = 800
A
20
200 V/µs , up to
75%
di/dt =
60
A/µs, I= 1000
I = 1000
A
VR =
50
V
A
VDRM
A
I rr
Peak reverse recovery current
230
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
80
mA
I
L
Latching current, typical
VD=5V, tp=30µs
25
230
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3,5
V
I
GT
Gate trigger current
VD=5V
25
350
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0,25
V
V
FGM
Peak gate voltage (forward)
25
30
V
I
FGM
Peak gate current
25
10
A
V
RGM
Peak gate voltage (reverse)
25
5
V
P
GM
Peak gate power dissipation
25
150
W
P
G(AV)
Average gate power dissipation
25
3
W
R
th(j-h)
Thermal impedance, DC
26
°C/kW
T
j
Operating junction temperature
Pulse width 100 µs
MOUNTING
F
Junction to heatsink, double side cooled
Mounting force
Mass
-30 / 125
°C
14.0 / 17.0
kN
500
tq code
ORDERING INFORMATION : ATF1047 S 14 M
standard specification
tq code
VDRM&VRRM/100
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
g
ATF1047 FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 06
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
1400
1000 A
1200
500 A
Qrr [µC]
1000
800
250 A
600
400
200
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
800
1000 A
500 A
600
Irr [A]
250 A
400
200
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
di/dt
IF
ta
Softness (s factor) s = tb / ta
Irr
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb
Vr
ATF1047 FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 06
SURGE CHARACTERISTIC
Tj = 125 °C
4500
18
4000
16
3500
14
3000
12
ITSM [kA]
On-state Current [A]
ON-STATE CHARACTERISTIC
Tj = 125 °C
2500
2000
10
8
1500
6
1000
4
500
2
0
0
0,6
1,1
1,6
2,1
2,6
1
On-state Voltage [V]
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
35
30
Zth j-h [°C/kW]
25
20
15
10
5
0
0,001
0,01
0,1
1
10
100
t[s]
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO S.p.A reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
100
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