ON HBL1008 1-channel esd protector Datasheet

HBL1008
Advance Information
1-Channel ESD Protector
Product Description
The HBL1008 provides robust ESD protection for sensitive parts
that may be subjected to electrostatic discharge (ESD). The tiny form
factor means it can be used in very confined spaces. The electrical
‘back−to−back Zener’ configuration provides symmetrical ESD
protection in cases where nodes with AC signals are present. This
device is designed and characterized to safely dissipate ESD strikes of
at least ±3 kV, according to the MIL−STD−883 (Method 3015)
specification for Human Body Model (HBM) ESD.
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ELECTRICAL SCHEMATIC
Au (Gold) on Topside
(Signal Node)
Au (Gold) on Topside
(Reference Node)
Features
• Compact Die Protects from ESD Discharges
• Almost no Conduction at Signal Amplitudes less than ±4 V
• ESD Protection to over ±8 V Contact Discharge per
•
MIL_STD_883 International ESD Standard
These Devices are Pb−Free and are RoHS Compliant
Applications
• LED Lighting
• Modules
• Interface Circuits
Silicon Substrate on Backside
Table 1. ORDERING INFORMATION†
Part Numbering Information
Ordering Part Number
Topside Metal
Back Metal
BG Thickness
Inking?
HBL1008−RP
Gold (Au)
None (Si Substrate)
6 mils
Yes
Shipping Method
Die on tape in ring−pack
NOTE: Contact your sales representative for other ordering options.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. P2
1
Publication Order Number:
HBL1008/D
HBL1008
SPECIFICATIONS
Table 2. OPERATING CONDITIONS
Parameter
Rating
Units
Operating Temperature Range
−40 to +130
°C
Storage Temperature Range
−55 to +130
°C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS
Symbol
Parameter
ILEAK
Conditions
Leakage Current
VBD
Breakdown Voltage
VESD
ESD Voltage Rating
Contact Discharge per Human Body Model,
MIL−STD−883 (Method 3015)
CT
Typ
Max
Units
V = ±4 V, T = 25°C
±0.1
±1
mA
V = ±7 V, T = 25°C
±10
±100
mA
±8
±8.9
V
T = 25°C
at ±20.0 mA
±7.3
(Note 1)
±8
Capacitance
Temp Coefficient of BV
20 mA
1. Per the standard, 3 positive and 3 negative strikes are applied, one second apart.
MECHANICAL DETAILS
Table 4. MECHANICAL SPECIFICATIONS (Note 2)
Symbol
Composition
Value
Unit
Silicon Wafer,
P+ doped
Length (Sawn)
480
mm
Width (Sawn)
457
mm
150
mm
Top Pad Length
356.5
mm
Top Pad Width
116.5
mm
Top Pad Spacing
103.5
mm
Thickness
Top Pad Composition
Top Pad Thickness
Back Metal (Underside)
Au (gold)
4±2
mm
None (silicon
substrate)
2. Dimensions are typical values if tolerances are not specified.
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2
Min
kV
50
pF
1.0
mV/K
HBL1008
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
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PUBLICATION ORDERING INFORMATION
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3
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
HBL1008/D
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