Foshan MJE13003K4 Silicon npn transistor in a to-252 plastic package. Datasheet

MJE13003K4
Rev.E May.-2016
描述
/
DATA SHEET
Descriptions
TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.

特征
/ Features
耐压高,开关速度快。
High voltage capability, high speed switching.
用途
/
Applications
主要用于高频电子照明电路、开关及开关电源。
High frequency electronic lighting, switching power supply applications.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
4
1
2
3
PIN1:Base
放大及印章代码
PIN 2、4:Collector
PIN 3:Emitter
/ hFE Classifications & Marking
见印章说明。See Marking Instructions
http://www.fsbrec.com
1/6
MJE13003K4
Rev.E May.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
600
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
9.0
V
Collector Current - Continuous
IC
1.5
A
Collector Power Dissipation
PC
1.25
W
Collector Power Dissipation
PC(Tc=25℃)
50
W
Tj
150
℃
Tstg
-55~150
℃
Junction Temperature
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VCBO
IC=1mA
IE=0
600
V
VCEO
IC=10mA
IB=0
400
V
Emitter to Base Breakdown Voltage
VEBO
IE=1mA
IC=0
9.0
V
Collector Cut-Off Current
ICBO
VCB=600V
IE=0
0.1
mA
Collector cut-off current
ICEO
VCE=400V
IB=0
0.1
mA
Emitter Base Cut-Off Current
IEBO
VEB=9.0V
IC=0
0.1
mA
DC Current Gain
hFE
VCE=5.0V
IC=0.2A
IB=0.25A
0.9
V
1.2
V
Collector to Base Breakdown
Voltage
VCE(sat)
IC=1.0A
Base to Emitter Saturation Voltage
VBE(sat)
IC=1.0A
IB=0.5A
VCE=10V
f=1.0MHz
IC=0.1A
VCE=5V
(UI9600)
IC=250mA
Transition Frequency
fT
Storage time
ts
Fall time
tf
http://www.fsbrec.com
10
40
5.0
MHz
4
μs
0.8
μs
2/6
MJE13003K4
Rev.E May.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
http://www.fsbrec.com
SOA(DC)
PC-TC
hFE-Ic
hFE-Ic
Vces-IC
Vbes-IC
tS-Ta
hFE-Ta
3/6
MJE13003K4
Rev.E May.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
http://www.fsbrec.com
4/6
MJE13003K4
Rev.E May.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
13003
K4 ****
说明:
BR: 

为公司代码
13003: 
为型号代码
K4:  

为规格代码
****:

为生产批号代码,随生产批号变化。

Company Code
Note:
BR:  
13003:
Product Type.
K4:

Specification Code
****:

Lot No. Code, code change with Lot No.
http://www.fsbrec.com
5/6
MJE13003K4
Rev.E May.-2016
DATA SHEET
回流焊温度曲线图(无铅)
/
Temperature Profile for IR Reflow Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 245±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:245±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:260±5℃
包装规格
Package Type
封装形式
TO-252
套管包装
Package Type
封装形式
使用说明
Temp.:260±5℃
Time:10±1 sec
/ Packaging SPEC.
卷盘包装
TO-251/252
时间:10±1 sec.
/ REEL
Units 包装数量
Dimension
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
2,500
2
5,000
5
25,000
包装尺寸
3
(unit:mm )
Reel
Inner Box 盒
Outer Box 箱
13〞×16
360×360×50
385×257×392
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
75
48
3,600
5
18,000
526×20.5×5.25
555×164×50
575×290×180
/ Notices
http://www.fsbrec.com
6/6
Similar pages