MSS39-xxx-x Series
P-Type Silicon Schottky Diodes
Rev. V1
Features
Very Low 1/f Noise
Detector Applications up to 40 GHz
Chip Beam Lead and Packaged Devices
Description
The MSS39-xxx-x Series of Schottky diodes is
fabricated on P-Type epitaxial substrates for
superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz.
Chip
Electrical Specifications: TA = 25°C
Model
VBR
Min.
V
VF
Typ.
V
CJ
Max.
pF
TSS
Ttp.
dBm
ϓ
Typ.
mV / mW
Frequency
Max.
GHz
Outline
MSS39-045-C15
5
0.40
0.10
-58
5,000
18
C15
MSS39-048-C15
5
0.39
0.15
-58
5,000
12
C15
Test Conditions
IR = 10 µA
IF = 1 mA
VR = 0 V,
F = 1 MHz
DC Bias = 10 mA, F = 10 GHz
RL = 100 KΩ Video BW = 2 MHz
Beam Lead
Electrical Specifications: TA = 25°C
Model
VBR
Min.
V
VF
Typ.
V
CJ
Max.
pF
TSS
Ttp.
dBm
ϓ
Typ.
mV / mW
Frequency
Max.
GHz
Outline
MSS39-144-B10B
3.5
0.38
0.08
-58
5,000
40
B10B
MSS39-146-B10B
3.5
0.38
0.10
-58
5,000
26
B10B
MSS39-148-B10B
3.5
0.39
0.12
-58
5,000
18
B10B
MSS39-152-B10B
3.5
0.38
0.18
-58
5,000
12
B10B
Test Conditions
IR = 10 µA
IF = 1 mA
VR = 0 V,
F = 1 MHz
DC Bias = 10 mA, F = 10 GHz
RL = 100 KΩ Video BW = 2 MHz
(Continued next page)
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MSS39-xxx-x Series
P-Type Silicon Schottky Diodes
Rev. V1
Packaged
Electrical Specifications: TA = 25°C
Model
VBR
Min.
V
VF
Typ.
V
CJ
Max.
pF
TSS
Ttp.
dBm
ϓ
Typ.
mV / mW
Frequency
Max.
GHz
Outline
MSS39-045-P55
5.0
0.40
0.25
-58
5000
18
P55
MSS39-045-P86
5.0
0.40
0.27
-58
5000
18
P86
MSS39-048-P55
5.0
0.39
0.30
-58
5000
12
P55
MSS39-048-P86
5.0
0.39
0.32
-58
5000
12
P86
MSS39-148-E25
3.5
0.39
0.22
-58
5000
18
E25
MSS39-148-H20
3.5
0.39
0.30
-58
5000
12
H20
MSS39-152-E25
3.5
0.38
0.28
-58
5000
12
E25
MSS39-152-H20
3.5
0.38
0.36
-58
5000
18
H20
Test Conditions
IR = 10 µA
IF = 1 mA
VR = 0 V,
F = 1 MHz
DC Bias = 10 mA, F = 10 GHz
RL = 100 KΩ Video BW = 2 MHz
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
1V
Forward Current
50 mA
CW Power Dissipation
100 mW, derated linearly to 0 @ TA = +150°C
Operating Temperature
-65°C to +150°C
Storage Temperature
-65°C to +150°C
Soldering Temperature (packaged)
+230°C for 5 seconds
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MSS39-xxx-x Series
P-Type Silicon Schottky Diodes
Rev. V1
Typical Performance Curves: TA = 25°C
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MSS39-xxx-x Series
P-Type Silicon Schottky Diodes
Rev. V1
Outline Drawings
4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MSS39-xxx-x Series
P-Type Silicon Schottky Diodes
Rev. V1
MACOM Technology Solutions Inc. All rights reserved.
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5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support