INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.75mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·Hard Switched and High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 340 A IDM Drain Current-Single Pulsed 1310 A PD Total Dissipation @TC=25℃ 380 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ MAX UNIT 0.4 ℃/W 62 ℃/W Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=195A IGSS Gate-Source Leakage Current VGS=± 20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS VGS=0V; ID = 250µA MIN TYP MAX 40 V 4 V 3.0 mΩ ±100 nA VDS=40V; VGS= 0V 20 μA IS =195A, VGS = 0 V 1.3 V 2 2 UNIT isc & iscsemi is registered trademark